Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2019-53
[Invited Talk]
Atomic layer etching process utilizing plasma
Sho Kumakura, Yoshihide Kihara, Masanobu Honda (Tokyo Electron Miyagi)
pp. 1 - 6
SDM2019-54
A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer
Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech)
pp. 7 - 10
SDM2019-55
The investigation of interface property of N-doped LaB6/SiO2/Si(100) stack structure by increasing deposition temperature
Kyung Eun Park, Hideki Kamata, Shun-ichiro Ohmi (Tokyo Tech)
pp. 11 - 15
SDM2019-56
Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application
Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.)
pp. 17 - 20
SDM2019-57
A study on the EOT scaling of the Hf-based MONOS non-volatile memory characteristics utilizing HfON tunneling layer
Jooyoung Pyo, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.)
pp. 21 - 24
SDM2019-58
Investigation of the multi-level operation of Hf-based MONOS nonvolatile memory utilizing multi charge trapping layers
Yusuke Horiuchi, Jooyoung Pyo, Shun-ichiro Ohmi (Tokyo Tech.)
pp. 25 - 28
SDM2019-59
[Invited Talk]
NiAl as Cu alternative for ultrasmall feature sizes
Linghan Chen, Junichi Koike, Daisuke Ando, Yuji Sutou (Tohoku Univ.)
pp. 29 - 33
SDM2019-60
[Invited Lecture]
Effect of an oxide layer at Co/Si interface on Schottky barrier height and contact resistivity
Koichi Kido, Ken Sato, Rihito Kuroda, Daisuke Ando, Yuji Suto, Junichi Koike (Tohoku Univ.)
pp. 35 - 38
SDM2019-61
Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applications
Rengie Mark D. Mailig, Yuichiro Aruga, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech)
pp. 39 - 43
SDM2019-62
[Invited Talk]
Random nanostructure formation and electric readout for nano-artifact metrics
Seiya Kasai, Renpeng Lu, Katsumi Shimizu, Xiang Yin (Hokkaido Univ.), Yosuke Ueba, Mikio Ishikawa, Mitsuru Kitamura (DNP), Morihisa Hoga (AIST), Makoto Naruse (Univ. of Tokyo), Tsutomu Matsumoto (YNU)
pp. 45 - 50
SDM2019-63
The process technology of new piezoelectric materials BiFeO3 and dependence of substrate
Fuminobu Imaizumi, Rikuto Nakada (NIT, Oyama College)
pp. 51 - 54
SDM2019-64
(See Japanese page.)
pp. 55 - 58
SDM2019-65
Resistance Measurement Platform for Statistical Evaluation of Emerging Memory Materials with High Accuracy
Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)
pp. 59 - 64
SDM2019-66
Gas concentration distribution measurement in semiconductor process chamber using a high SNR CMOS absorption image sensor
Keigo Takahashi, Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Yasuyuki Fujihara, Maasa Murata, Hidekazu Ishii, Tatsuo Morimoto, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.)
pp. 65 - 68
SDM2019-67
Observation of Fluctuation of Magnetron Sputtering Plasmas Using High-speed Video Camera
Shintaro Yamazaki, Tetsuya Goto, Manabu Suzuki, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.)
pp. 69 - 72
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.