IEICE Technical Report

Online edition: ISSN 2432-6380

Volume 122, Number 247

Silicon Device and Materials

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Table of contents

SDM2022-64
[Invited Talk] CMOS Device Technology and IRDS
Hitoshi Wakabayashi (Tokyo Tech)
pp. 1 - 6

SDM2022-65
[Invited Talk] Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under Nonlinear Modeling of Surface Roughness Scattering
Kei Sumita, Min-Soo Kang, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo)
pp. 7 - 12

SDM2022-66
[Invited Talk] GPGPU acceleration of Monte Carlo ion implantation -- for high energy implantation --
Fumie Machida, Hiroo Koshimoto, Yasuyuki Kayama (SRJ), Alexander Schmidt, Inkook Jang (SEC), Satoru Yamada (SRJ), Dae Sin Kim (SEC)
p. 13

SDM2022-67
[Invited Talk] Modeling Electrical Properties of CrSi Thin Films
Kenichiro Sonoda, Nobuhito Shiraishi, Kazuyoshi Maekawa, Nozomi Ito, Eiji Hasegawa, Tamotsu Ogata (Renesas Electronics)
pp. 14 - 18

SDM2022-68
[Invited Talk] Simulation of CMOS circuit and single-electron transistors for readout of spin qubits
Tetsufumi Tanamoto (Teikyo Univ.)
pp. 19 - 22

SDM2022-69
[Invited Talk] A study on the development of nanoscale device simulation method based on the use of gate-type quantum computing algorithm
Satofumi Souma, Shingo Matsuo, Takuya Ishibashi (Kobe Univ.)
pp. 23 - 27

SDM2022-70
[Invited Talk] Materials Simulation: What Classical Computers Can Do and What Only Quantum Computers Can Do -- Example of materials simulation platform Quloud-RSDFT --
Yu-ichiro Matsushita (TokyoTech), Jun-ichi Iwata, Taichi Kosugi, Tran Ba Hung, Yusuke Nishiya, Hirofumi Nishi (Quemix)
pp. 28 - 31

SDM2022-71
[Invited Talk] Toward Super Temporal Resolution by Suppression of Mixing Effects of Electrons
Takeharu Goji Etoh (Osaka Univ.), Kazuhiro Shimonomura, Taeko Ando, Yoshiyuki Matsunaga, Yutaka Hirose (Ritsumeikan Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.), Yoshinari Kamakura (OIT), Hideki Mutoh (Link Research)
pp. 32 - 39

SDM2022-72
[Invited Talk] Implementation of Compact Model of a Metal Oxide Molecule Sensor for Self-Heating Control
Yohsuke Shiiki (Keio Univ.), Shintaro Nagata, Tsunaki Takahashi, Takeshi Yanagida (Univ. Tokyo), Hiroki Ishikuro (Keio Univ.)
pp. 40 - 43

SDM2022-73
Modeling of Super Steep Subthreshold Slope "PN Body Tied SOI-FET" by using Neural Network
Nakata Kengo, Mori Takayuki, Ida Jiro (Kanazawa Inst. of Tech.)
pp. 44 - 48

SDM2022-74
[Invited Talk] Understanding of Electron Mobility Limiting Factor in Cryo-CMOS
Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST)
p. 49

SDM2022-75
[Invited Talk] Evaluation and Modeling of Inversion Layer Mobility in Si-face 4H-SiC MOSFETs with Nitrided Gate Oxide
Munetaka Noguchi, Hiroshi Watanabe (Mitsubishi Electric Corp.), Koji Kita (Tokyo Univ.), Kazuyasu Nishikawa (Mitsubishi Electric Corp.)
pp. 50 - 54

SDM2022-76
[Invited Talk] Reliable design of SiC Power Modules -- An Experimental Characterization for Aging Prediction --
Shuhei Fukunaga (Osaka Univ.), Alberto Castellazzi (KUAS), Tsuyoshi Funaki (Osaka Univ.)
pp. 55 - 60

SDM2022-77
[Invited Talk] SISPAD2022 Review
Satofumi Souma (Kobe Univ.)
pp. 61 - 67

SDM2022-78
Measurement and Modeling of Cycle-to-Cycle Variability in ReRAM Devices
Shoma Yoshimoto, Masaki Takemori, Yoshinari Kamakura (OIT)
pp. 68 - 72

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.