| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| SDM |
2006-06-21
13:00 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Characterization of oxide films/SiC fabricated by metal-organic chemical vapor deposition
Shiro Hino, Tomohiro Hatayama, Eisuke Tokumitsu (Tokyo Inst. of Tech.), Naruhisa Miura, Tatsuo Oomori (Mitsubishi Elec. Corp.) |
Improvement of insulator/SiC interface is remained as a key issue to fabricate SiC-power-MOSFETs. In this work, to avoid... [more] |
SDM2006-42
pp.1-5 |
| SDM |
2006-06-21
13:25 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Photoelectron Spectroscopy of HfO2/Ge(100) stacked structure
Hiroshi Nakagawa, Akio Ohta, Hiroyuki Abe, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) |
Ultrathin hafnium oxides (~5.4nm in thickness) evaporated on wet-chemically cleaned Ge(100) were annealed at 550ºC ... [more] |
SDM2006-43
pp.7-12 |
| SDM |
2006-06-21
13:50 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Characterization of Interfacial Reactions in Al2O3/SiNx/poly-Si Stack Structure by Photoemission Measurements
Hiroaki Furukawa, Masahiro Taira, Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.), Kenji Komeda, Mitsuhiro Horikawa, Kuniaki Koyama, Hideharu Miyake (Elpida Memory) |
[more] |
SDM2006-44
pp.13-17 |
| SDM |
2006-06-21
14:30 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Local carrier trapping and their detrapping process at constant voltage stress in La2O3-Al2O3 composite films
Toshifumi Sago, Akiyoshi Seko, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) |
We observed changes in local leakage currents in La2O3-Al2O3 composite films under constant voltage stress using conduct... [more] |
SDM2006-45
pp.19-24 |
| SDM |
2006-06-21
14:55 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Characterization of open volumes in high-k gate dielectrics by using monoenergetic positron beams
Akira Uedono, T. Otsuka, K. Ito, K. Shiraishi, Kikuo Yamabe (Univ. of Tsukuba), Seiichi Miyazaki (Hiroshima Univ.), Naoto Umezawa, Toyohiro Chikyow (NIMS), Toshiyuki Ohdaira, R. Suzuki (AIST), Seiji Inumiya, Satoshi Kamiyama (Selete), Yasushi Akasaka (TEL), Yasuo Nara (Selete), Keisaku Yamada (Waseda Uni.) |
[more] |
SDM2006-46
pp.25-30 |
| SDM |
2006-06-21
15:20 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Work-function engineering of poly-Si gate by Fermi level pinning and its impact on low power CMOSFET
Yasuhiro Shimamoto (Hitachi), Jiro Yugami, Masao Inoue, Masaharu Mizutani, Takashi Hayashi, Masahiro Yoneda (Renesas) |
[more] |
SDM2006-47
pp.31-35 |
| SDM |
2006-06-21
16:00 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Electric Properties on High-k Capacitors with Work-Function Tuned Metal Electrodes
Kenji Ohmori (NIMS), Parhat Ahmet (TIT), Kenji Shiraishi (Univ. of Tsukuba), Heiji Watanabe (Osaka Univ.), Yasushi Akasaka (Selete), Kikuo Yamabe (Univ. of Tsukuba), Michiko Yoshitake (NIMS), K. S. Chang, M. L. Green (NIST), Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.), Toyohiro Chikyow (NIMS) |
[more] |
SDM2006-48
pp.37-41 |
| SDM |
2006-06-21
16:25 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Evaluation of Chemical Structures and Work Function of NiSi near the Interface between NiSi and SiO2
Hiromichi Yoshinaga, Daisuke Azuma, Hideki Murakami, Akio Ohta, Yuuki Munetaka, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Takayuki Aoyama, Kimihiko Hosaka (Fujitsu Laboratories Ltd.), Kentaro Shibahara (Hiroshima Univ.) |
Impurity (Sb, P, B or As)-implanted Ni-silicides formed on thermally-grown SiO2 were characterized by Raman scattering s... [more] |
SDM2006-49
pp.43-48 |
| SDM |
2006-06-21
16:50 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Surface Microroughness of Silicon
-- Mechanism and Its Reduction --
Hitoshi Morinaga, Kenji Shimaoka, Tadahiro Ohmi (Tohoku Univ.) |
It is known that silicon surfaces are roughened with wet processes. It was revealed that light, such as fluorescent lig... [more] |
SDM2006-50
pp.49-54 |
| SDM |
2006-06-21
17:15 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Reduction of ferritin core embedded in Si thin film by thermal annealing
Takashi Matsumura, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Shigeo Yoshii, Ichiro Yamashita (Panasonic) |
[more] |
SDM2006-51
pp.55-59 |
| SDM |
2006-06-22
09:00 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Comparison between Si(110) and Si(100) Surfaces in their Kinetics of Initial Oxidation
-- From Real-time XPS Measurements --
Maki Suemitsu, Atsushi Kato, Hideaki Togashi, Atsushi Konno (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA), Yuzuru Narita (KIT) |
By using real-time photoemission spectroscopy, kinetics of initial oxidation of Si(110)-16´2 surface has been investigat... [more] |
SDM2006-52
pp.61-63 |
| SDM |
2006-06-22
09:25 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Gate Oxide Process Dependence of CMOS Performance on Si(110) Surface
Susumu Hiyama, Junli Wang, Takayoshi Kato, Tomoyuki Hirano, Kaori Tai, Hayato Iwamoto (Sony) |
We investigated gate oxide process dependence of hole mobility on Si(110) surface. We used RTO and radical oxidization a... [more] |
SDM2006-53
pp.65-69 |
| SDM |
2006-06-22
09:50 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
The dependence of the intermediate nitridation states density at Si3N4/Si interface on surface Si atoms density
Masaaki Higuchi (Tohoku Univ.), Seiji Shinagawa (Musashi Inst. of Tech.), Akinobu Teramoto (Tohoku Univ.), Hiroshi Nohira (Musashi Inst. of Tech.), Takeo Hattori (Tohoku Univ./Musashi Inst. of Tech.), Eiji Ikenaga (JASRI), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
[more] |
SDM2006-54
pp.71-76 |
| SDM |
2006-06-22
10:30 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Analysis of nitrogen depth profile in SiO2/SiN stacks studied by angle-resolved photoemission spectroscopy
Satoshi Toyoda, Jun Okabayashi, Masaharu Oshima (Tokyo Univ.), Guo-Lin Liu, Ziyuan Liu, Kazuto Ikeda, Koji Usuda (STARC) |
Nitrogen in-depth profile and chemical states in Si oxynitride films are important to understand characteristics of the ... [more] |
SDM2006-55
pp.77-80 |
| SDM |
2006-06-22
10:55 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Realization of SiON films with small ΔVfb
Daisuke Matsushita, Koichi Muraoka, Yasushi Nakasaki, Koichi Kato, Shoko Kikuchi, Kiwamu Sakuma, Yuichiro Mitani (toshiba R&D center), Mariko Takayanagi, Kazuhiro Eguchi (Semiconductor Company) |
[more] |
SDM2006-56
pp.81-86 |
| SDM |
2006-06-22
11:20 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Influence of Nitrogen and Hydrogen on NBTI in Ultrathin SiON
Yuichiro Mitani, Hideki Satake (Toshiba Corp.) |
NBTI(Negative Bias Temperature Instability) has become increasingly serious in the context of effort to develop highly r... [more] |
SDM2006-57
pp.87-92 |
| SDM |
2006-06-22
12:45 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
HfON Thin Film Formations by ECR Plasma Oxidation of HfN
Shun-ichiro Ohmi, Tomoki Kurose, Masaki Satoh (Tokyo Tech) |
[more] |
SDM2006-58
pp.93-97 |
| SDM |
2006-06-22
13:10 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Interfacial reaction in HfO2/SiO2/Si(001) during O2 anneal observed by high-resolution RBS
Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura (Kyoto Univ.), Masashi Uematsu (NTT BRL), Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.) |
[more] |
SDM2006-59
pp.99-102 |
| SDM |
2006-06-22
13:35 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
The effect on thermal stability by nitrogen atoms in HfO2-based gate dielectrics
Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta (FUJITSU LABORATORIES LTD.) |
[more] |
SDM2006-60
pp.103-106 |
| SDM |
2006-06-22
14:15 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
unknown
Wataru Mizubayashi (MIRAI-ASRC, AIST), Arito Ogawa, Toshihide Nabatame, Hideki Satake (MIRAI-ASET), Akira Toriumi (MIRAI-ASRC, AIST, Univ. of Tokyo) |
[more] |
SDM2006-61
pp.107-111 |