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Technical Committee on Electron Devices (ED) (Searched in: 2012)
Search Results: Keywords 'from:2012-05-17 to:2012-05-17'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM, CPM | 2012-05-17 13:00 |
Aichi | VBL, Toyohashi Univ. of Technol. | [Invited Talk]
Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots and Its Application to Light Emitting Diodes Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)  ED2012-17 CPM2012-1 SDM2012-19 |
Self-aligned Si quantum dots (Si-QDs) have been successfully fabricated on ultrathin SiO2 by controlling low-pressure ch... [more] | ED2012-17 CPM2012-1 SDM2012-19 pp.1-6 |
| ED, SDM, CPM | 2012-05-17 13:40 |
Aichi | VBL, Toyohashi Univ. of Technol. | Improvement in crystalline quality of GaAsN alloy by high temperature growth Futoshi Fukami, Noriyuki Urakami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2012-18 CPM2012-2 SDM2012-20 |
GaAsN alloys are one of the attractive candidates for the active layers of the luminescence devices on Si. Compared with... [more] | ED2012-18 CPM2012-2 SDM2012-20 pp.7-10 |
| ED, SDM, CPM | 2012-05-17 14:05 |
Aichi | VBL, Toyohashi Univ. of Technol. | Electrical properties of n- and p-type AlGaPN for dislocation-free light-emitting devices on Si substrate Hironari Ito, Keisuke Kumagai, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2012-19 CPM2012-3 SDM2012-21 |
AlGaPN alloys are expected as a cladding layer for Si based monolithic laser structure in optoelectronic integrated circ... [more] | ED2012-19 CPM2012-3 SDM2012-21 pp.11-14 |
| ED, SDM, CPM | 2012-05-17 14:30 |
Aichi | VBL, Toyohashi Univ. of Technol. | Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2012-20 CPM2012-4 SDM2012-22 |
We grew High-quality semipolar (1-101) GaN stripes on a Si substrate through Selective area growth (SAG) and regrow InGa... [more] | ED2012-20 CPM2012-4 SDM2012-22 pp.15-18 |
| ED, SDM, CPM | 2012-05-17 14:55 |
Aichi | VBL, Toyohashi Univ. of Technol. | Growth-rate dependence of GaP structure grown Si substrates using metalorganic vapor phase epitaxy Tatsuya Takagi, Shunshin Ka, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.) ED2012-21 CPM2012-5 SDM2012-23 |
GaP layers were grown on 2° and 4° misoriented Si substrates using metalorganic vapor phase epitaxy. GaP was deposited a... [more] | ED2012-21 CPM2012-5 SDM2012-23 pp.19-23 |
| ED, SDM, CPM | 2012-05-17 15:30 |
Aichi | VBL, Toyohashi Univ. of Technol. | A Surface-stress Sensor Based on a MEMS Fabry-Perot Interferometer for Label-free Protein Detection Kazuhiro Takahashi, Hiroki Oyama, Nobuo Misawa, Koichi Okumura, Makoto Ishida, Kazuaki Sawada (Toyohashi Tech.) ED2012-22 CPM2012-6 SDM2012-24 |
We have newly developed a label-free protein sensor based on a MEMS Fabry-Perot interferometer integrated with a photodi... [more] | ED2012-22 CPM2012-6 SDM2012-24 pp.25-28 |
| ED, SDM, CPM | 2012-05-17 15:55 |
Aichi | VBL, Toyohashi Univ. of Technol. | Fabrication and transmit-receive characteristics of ultrasonic transducers array using epitaxial PZT thin films on γ-Al2O3/Si substrates Katsuya Ozaki, Masato Nishimura, Keisuke Suzuki, Yasuyuki Numata (Toyohashi tech.), Nagaya Okada (Honda Electronics), Daisuke Akai, Makoto Ishida (Toyohashi tech.) ED2012-23 CPM2012-7 SDM2012-25 |
[more] | ED2012-23 CPM2012-7 SDM2012-25 pp.29-33 |
| ED, SDM, CPM | 2012-05-17 16:20 |
Aichi | VBL, Toyohashi Univ. of Technol. | Fabrication of portable hydrogen sensors based on photochemically deposited SnO2 thin films Dengbaoleer Ao, Yukihisa Moriguchi, Masaya Ichimura (Nagoya Inst. of Tech.Univ) ED2012-24 CPM2012-8 SDM2012-26 |
We fabricated highly sensitive room temperature hydrogen sensors based on doped and undoped SnO2 films by the photochemi... [more] | ED2012-24 CPM2012-8 SDM2012-26 pp.35-38 |
| ED, SDM, CPM | 2012-05-17 16:45 |
Aichi | VBL, Toyohashi Univ. of Technol. | Preparation and evaluation of Ga2O3 oxygen sensors Masaaki Isai, Takahiro Yamamoto, Takuma Tori (Shizuoka Univ.) ED2012-25 CPM2012-9 SDM2012-27 |
Abstract Recently, from a point of environmental problems, oxygen gas sensors attract attention of controlling the exha... [more] | ED2012-25 CPM2012-9 SDM2012-27 pp.39-42 |
| ED, SDM, CPM | 2012-05-18 09:00 |
Aichi | VBL, Toyohashi Univ. of Technol. | High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa Masashi Kashiwano, Jun Hirai, Shunsuke Ikeda, Motohiko Fujimatsu, Yasuyuki Miyamoto (TITech) ED2012-26 CPM2012-10 SDM2012-28 |
We fabricated a vertical metal-insulator-semiconductor feld-effect transistor (MISFET) with a heterostructure launcher a... [more] | ED2012-26 CPM2012-10 SDM2012-28 pp.43-48 |
| ED, SDM, CPM | 2012-05-18 09:25 |
Aichi | VBL, Toyohashi Univ. of Technol. | Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) ED2012-27 CPM2012-11 SDM2012-29 |
Our aim is to investigate the effects of dry etching of AlGaN surface on interface properties of GaN-based MOS structure... [more] | ED2012-27 CPM2012-11 SDM2012-29 pp.49-52 |
| ED, SDM, CPM | 2012-05-18 09:50 |
Aichi | VBL, Toyohashi Univ. of Technol. | Evaluation of GaN substrates for vertical GaN power device applications Tetsu Kachi, Tsutomu Uesugi (Toyota RDL) ED2012-28 CPM2012-12 SDM2012-30 |
[more] | ED2012-28 CPM2012-12 SDM2012-30 pp.53-56 |
| ED, SDM, CPM | 2012-05-18 10:25 |
Aichi | VBL, Toyohashi Univ. of Technol. | Electrical Property of n-type GaPN:S Grown by Alternately N Supplied Organometallic Vapor Phase Epitaxy Yuya Nagamoto, Katsuhiko Matsuoka, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (TUT) ED2012-29 CPM2012-13 SDM2012-31 |
[more] | ED2012-29 CPM2012-13 SDM2012-31 pp.57-61 |
| ED, SDM, CPM | 2012-05-18 10:50 |
Aichi | VBL, Toyohashi Univ. of Technol. | Low temperature crystallization of SiC films by metal induced growth technique Katsuya Abe, Ryohei Ushikusa, Yuya Sakaguchi, Takuu Syu, Tomohiko Yamakami (Shinshu Univ.) ED2012-30 CPM2012-14 SDM2012-32 |
[more] | ED2012-30 CPM2012-14 SDM2012-32 pp.63-66 |
| ED, SDM, CPM | 2012-05-18 11:15 |
Aichi | VBL, Toyohashi Univ. of Technol. | Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33 |
Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never complet... [more] | ED2012-31 CPM2012-15 SDM2012-33 pp.67-72 |
| ED, SDM, CPM | 2012-05-18 11:40 |
Aichi | VBL, Toyohashi Univ. of Technol. | Growth and characterization of strained Ge epitaxial layers on SiGe substrates Takashi Yamaha, Osamu Nakatsuka (Nagoya Univ.), Kyoichi Kinoshita, Shinichi Yoda (JAXA), Shigeaki Zaima (Nagoya Univ.) ED2012-32 CPM2012-16 SDM2012-34 |
[more] | ED2012-32 CPM2012-16 SDM2012-34 pp.73-77 |
| ED, SDM, CPM | 2012-05-18 13:00 |
Aichi | VBL, Toyohashi Univ. of Technol. | Influences of Crystal Structure and Orientation on Band Offsets at the CdS/Cu2ZnSnS4 Interface by First Principles Study Wujisiguleng Bao, Masaya Ichimura (Nagoya Inst. of Tech) ED2012-33 CPM2012-17 SDM2012-35 |
Cu2ZnSnS4 (CZTS) has attracted much attention recently as an absorber layer material in a heterojunction solar cell. Usi... [more] | ED2012-33 CPM2012-17 SDM2012-35 pp.79-83 |
| ED, SDM, CPM | 2012-05-18 13:25 |
Aichi | VBL, Toyohashi Univ. of Technol. | Electrodeposition of Ga2O3 Thin Films from Aqueous Gallium Sulfate Solutions Junie Jhon M. Vequizo, Masaya Ichimura (Nagoya Inst. of Tech.) ED2012-34 CPM2012-18 SDM2012-36 |
Gallium oxide (Ga2O3) thin films were prepared by employing facile electrodeposition technique from aqueous gallium sulf... [more] | ED2012-34 CPM2012-18 SDM2012-36 pp.85-89 |
| ED, SDM, CPM | 2012-05-18 13:50 |
Aichi | VBL, Toyohashi Univ. of Technol. | H2O2 treatment of the Cu2O thin films deposited by the electrochemical method Ying Song, Masaya Ichimura (Nagoya Inst. of Tech.) ED2012-35 CPM2012-19 SDM2012-37 |
Cu2O is considered to be promising as an absorber layer material of solar cells, but its band gap is larger than the opt... [more] | ED2012-35 CPM2012-19 SDM2012-37 pp.91-94 |
| ED, SDM, CPM | 2012-05-18 14:15 |
Aichi | VBL, Toyohashi Univ. of Technol. | Characterization of Local Electronic Transport and Electronic Emission Properties of Pillar-Shaped Si Nanostructures Daichi Takeuchi, Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.), Hirokazu Kaki, Tsukasa Hayashi (NISSIN ELECTRIC Co. Ltd.) ED2012-36 CPM2012-20 SDM2012-38 |
[more] | ED2012-36 CPM2012-20 SDM2012-38 pp.95-98 |
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