|
|
| Chair |
|
Masaaki Kuzuhara |
| Vice Chair |
|
Tamotsu Hashidume |
| Secretary |
|
Shin-ichiro Takatani, Manabu Arai |
| Assistant |
|
Naoki Hara, Koichi Murata |
|
| Conference Date |
Fri, Jun 15, 2007 13:00 - 17:30
Sat, Jun 16, 2007 09:30 - 12:25 |
| Topics |
Compound Semiconductor Process, Device, etc |
| Conference Place |
Gofuku Campus, Toyama University |
| Address |
Gofuku 3190, Toyama-shi, Toyama 930-8555, Japan |
| Transportation Guide |
By Bus: About 20min. from Toyama Airport to JR Toyama Station,
http://www.u-toyama.ac.jp/en/access/gofuku/index.html |
Contact
Person |
Prof. Koichi Maezawa |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Fri, Jun 15 PM
13:00 - 17:30 |
| (1) |
13:00-13:25 |
0.10 um Ion-Implanted GaAs MESFETs with Low Cost Production Process  ED2007-31 |
Masataka Watanabe, Daiji Fukushi, Hiroshi Yano, Shigeru Nakajima (Eudyna Devices) |
| (2) |
13:25-13:50 |
A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance ED2007-32 |
Hirotaka Amasuga, Akira Inoue, Seiki Goto, Tetsuo Kunii, Yoshitsugu Yamamoto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric) |
| (3) |
13:50-14:15 |
Study of localized spins in Be delta-doped GaAs structure ED2007-33 |
J.p. Noh, D.w. Jung, A. z. m. Touhidul Islam, Nobuo Otauka (JAIST) |
| |
14:15-14:25 |
Break ( 10 min. ) |
| (4) |
14:25-14:50 |
Epitaxial lift-off of InAs thin films and their van der Waals bonding on SiO2/Si wafers ED2007-34 |
Hayato Takita, Yonkil Jeong, Jun-ya Arita, Toshi-kazu Suzuki (JAIST) |
| (5) |
14:50-15:15 |
Growth of Insb films on Si(111) surface by 2-step growth ED2007-35 |
Kazunori Murata, Norsuryati Binti Ahmad, Yu Tamura, Masayuki Mori, Toyokazu Tambo, Koichi Maezawa (Univ of Toyama) |
| (6) |
15:15-15:40 |
Formation of high quality InSb film via InSb bi-layer on Si substrate ED2007-36 |
Mitsufumi Saito, Masayuki Mori, Yuji Yamasita, Toyokazu Tambo, Koichi Maezawa (Univ. of Toyama) |
| |
15:40-15:50 |
Break ( 10 min. ) |
| (7) |
15:50-16:15 |
DC characteristics of HBT with buried SiO2 wires in collector ED2007-37 |
Shinnosuke Takahashi, Tsukasa Miura, Hiroaki Yamashita (Tokyo Tech), Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech/JST-CREST) |
| (8) |
16:15-16:40 |
MOVPE growth of high-quality InP-based resonant tunneling diodes ED2007-38 |
Hiroki Sugiyama, Hideaki Matsuzaki, Yasuhiro Oda, Haruki Yokoyama, Takatomo Enoki, Takashi Kobayashi (NTT) |
| (9) |
16:40-17:05 |
Study for implementation of integrated gyrators by using resonant tunneling diodes ED2007-39 |
Michihiko Suhara, Eri Ueki, Tsugunori Okumura (Tokyo Metro. Univ.) |
| (10) |
17:05-17:30 |
Optical control of triple quantum disks on waveguide structure ED2007-40 |
Masahito Yamaguchi, Minori Yokoi (Nagoya Univ.), Hidetoshi Takagi (Ube N.C.T.), Nobuhiko Sawaki (Nagoya Univ.) |
Sat, Jun 16 AM
09:30 - 12:25 |
| (11) |
09:30-10:10 |
[Invited Talk]
Current transport mechanism of metal/p-GaN contacts ED2007-41 |
Kenji Shiojima (Fukui Univ.) |
| (12) |
10:10-10:35 |
Anodic oxidation on n-GaN surface using photoelectrochemical process ED2007-42 |
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) |
| (13) |
10:35-11:00 |
Surface passivation of AlGaN/GaN HFETs by RF magnetron sputtering using AlN target ED2007-43 |
Nariaki Tanaka (JAIST), Yasunobu Sumida (POWDEC), Toshi-kazu Suzuki (JAIST) |
| (14) |
11:00-11:25 |
Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current ED2007-44 |
Kazuki Nomoto, Taku Tajima (Hosei Univ.), Tomoyoshi Mishima (Hitachi Cable Ltd.), Masataka Satoh, Tohru Nakamura (Hosei Univ.) |
| |
11:25-11:35 |
Break ( 10 min. ) |
| (15) |
11:35-12:00 |
Electrical and structural properties of Al implanted 4H-SiC ED2007-45 |
Masataka Satoh, Shingo Miyagawa, Takahiro Kudoh, Shohei Nagata, Taku Tajima, Tohru Nakamura (Hosei Univ.) |
| (16) |
12:00-12:25 |
Reverse characteristics of 4H-SiC PiN diode with Vanadium ion implanted guard-ring ED2007-46 |
Shuichi Ono, Manabu Arai (NJRC) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Invited Talk | Each speech will have 30 minutes for presentation and 10 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Tsuyoshi Tanaka（Matsushita）
TEL: 075-956-9083, FAX: 075-956-9110
E- :     erl  ci
Manabu Arai（New JRC）
TEL: 049-278-1477、FAX: 049-278-1419
E-:   injr
Shinichiro Takatani（Hitachi）
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr
Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E-：  aecl |
Last modified: 2007-04-26 21:39:47
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