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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2017-08-09 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Evaluation of ZnO layer of PbS QD/Silicon infrared Photodiode for LSI Akio Higo, Haibin Wang, Takaya Kubo, Naoto Usami, Yuki Okamoto, Kentaro Yamada, Hiroshi Segawa, Masakazu Sugiyama, Yoshio Mita (Univ. of Tokyo)  ED2017-30 |
In secure life electronics applications, cost effective and wide range infrared photodiode with large scale integration ... [more] | ED2017-30 pp.23-24 |
| LQE, OPE, OCS | 2016-10-27 17:00 |
Miyazaki | Miyazaki Citizen's Plaza | Evaluation of Miniband Formation and Carrier Transport on Superlattice in Flat-band Structure Nakamura Tsubasa, Matsuochi Kouki, Takeda Hideaki (Univ. of Miyazaki), Kasidit Toprasertpong, Sugiyama Masakazu, Nakano Yoshiaki (The Univ. of Tokyo), Suzuki Hidetoshi, Ikari Tetsuo, Fukuyama Atsuhiko (Univ. of Miyazaki) OCS2016-45 OPE2016-86 LQE2016-61 |
For improvement of efficiencies of quantum well solar cells and quantum-cascade lasers, it is necessary that carriers tr... [more] | OCS2016-45 OPE2016-86 LQE2016-61 pp.61-64 |
| ED, SDM | 2014-02-28 09:00 |
Hokkaido | Hokkaido Univ. Centennial Hall | Fabrication of GaN/AlN Resonant Tunneling Diodes by MOVPE
-- Analysis of Nitride Quantum Well Structures -- Naruaki Itoh, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano (Univ. of Tokyo) ED2013-142 SDM2013-157 |
Owing to large conduction band offset of 2.1 eV, which is larger than the values for other compound semiconductor system... [more] | ED2013-142 SDM2013-157 pp.55-59 |
| LQE, ED, CPM | 2011-11-18 13:35 |
Kyoto | Katsura Hall，Kyoto Univ. | Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Kenji Tsubaki (RIKEN/PEW), Masakazu Sugiyama (Tokyo Univ.) ED2011-95 CPM2011-144 LQE2011-118 |
We demonstrated 256-278 nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) on Si substrates by using epi... [more] | ED2011-95 CPM2011-144 LQE2011-118 pp.113-116 |
| EMD, OPE, LQE, CPM | 2010-08-26 15:00 |
Hokkaido | Chitose Arcadia Plaza | III-V CMOS platform technologies for high-performance electric-photonic integrated circuits Mitsuru Takenaka, Masafumi Yokoyama, Masakazu Sugiyama, Yoshiaki Nakano, Shinichi Takagi (Univ. of Tokyo.) EMD2010-35 CPM2010-51 OPE2010-60 LQE2010-33 |
[more] | EMD2010-35 CPM2010-51 OPE2010-60 LQE2010-33 pp.45-48 |
| LQE, ED, CPM | 2008-11-27 10:20 |
Aichi | Nagoya Institute of Technology | A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy Tomonari Shioda, Yuki Tomita, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano (The Univ. of Tokyo) ED2008-154 CPM2008-103 LQE2008-98 |
Selective area metal-organic vapor phase epitaxy (SA-MOVPE) allows in-plane control of layer composition and thickness. ... [more] | ED2008-154 CPM2008-103 LQE2008-98 pp.13-16 |
| OCS, LQE, OPE | 2008-10-24 10:10 |
Fukuoka | Kyushu Univ. | Intersubband absorption in GaN/AlN-based waveguide with SiN cladding layer Norio Iizuka (Toshiba), Toshimasa Shimizu (RCAST, The Univ, of Tokyo), Haruhiko Yoshida, Nobuto Managaki (Toshiba), Sodabanlu hassanet, Masakazu Sugiyama (The Univ. of Tokyo), Yoshiaki Nakano (RCAST, The Univ, of Tokyo) OCS2008-69 OPE2008-112 LQE2008-81 |
Intersubband absorption was achieved for a waveguide with SiN as a upper cladding layer. With the purpose of applying to... [more] | OCS2008-69 OPE2008-112 LQE2008-81 pp.113-116 |
| LQE | 2006-12-08 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Monolithically Integrated 1.55um 4-channel DFB Laser Array by Movpe Selective Area Growth for CWDM Systems Jesse Darja, Melvin J. Chan, Masakazu Sugiyama, Yoshiaki Nakano (Univ. of Tokyo) |
[more] | LQE2006-113 pp.55-59 |
| PN, OPE, OFT, LQE | 2005-01-28 10:25 |
Osaka | Osaka University | Fabrication of InP-based Arrayed Waveguide Gratings and Integration Trial with Active Devices by MOVPE Selective-Area Growth Kenji Sakurai, Al Amin Abdullah, Takashi Sakurai, Masakazu Sugiyama, Yoshiaki Nakano (Univ. of Tokyo) |
[more] | PN2004-99 OFT2004-105 OPE2004-206 LQE2004-153 pp.7-10 |
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