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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2013-12-13 10:00 |
Nara | NAIST | Silicon nanowire growth by vapor liquid solid mode using indium dots Keigo Fukunaga, Tomoaki Hatayama, Hiroshi Yano, Naofumi Okamoto, Ayumi Tani, Yasuaki Ishikawa, Takashi Fuyuki (NAIST)  SDM2013-119 |
A silicon nanowire (Si-NW) structure is one of the key structures to improve conversion efficiency in silicon solar cell... [more] | SDM2013-119 pp.19-23 |
| SDM | 2013-12-13 17:00 |
Nara | NAIST | A Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3- and NO-Annealed Gate Oxides Natsuko Kanafuji, Hiroshi Yano, Ai Osawa, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-132 |
4H-SiC MOSFETs are expected as low loss power devices with high blocking voltage. Threshold voltage instability is one o... [more] | SDM2013-132 pp.97-100 |
| SDM | 2013-12-13 17:40 |
Nara | NAIST | Structural Change of Silicon Carbide Surface Etched by Chlorine-Trifluoride Ryota Hori, Tomoaki Hatayama, Hiroshi Yano, Takashi Fuyuki (NAIST) SDM2013-134 |
Silicon carbide surface with 4°-off toward <11-20> was chemically etched by chlorine-trifluoride gas without plasma. The... [more] | SDM2013-134 pp.107-112 |
| SDM | 2013-06-18 15:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
High performance of SiC-MOS devices by POCl3 annealing Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-58 |
Effects of phosphorus incorporation by POCl3 annealing on electrical properties of 4H-SiC MOS devices were investigated.... [more] | SDM2013-58 pp.71-76 |
| SDM, ED, CPM | 2013-05-17 14:55 |
Shizuoka | Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. | Evaluation of the carrier lifetime of SiC for high-efficiency hydrogen generation Keiko Miyake, Tomonari Yasuda, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2013-33 CPM2013-18 SDM2013-40 |
The hydrogen generation by the electrolysis of water with using sunlight attracts an attention for as a next energy tech... [more] | ED2013-33 CPM2013-18 SDM2013-40 pp.93-98 |
| SDM | 2012-12-07 10:15 |
Kyoto | Kyoto Univ. (Katsura) | Plasmaless etching of silicon carbide using chlorine based gas Tomoaki Hatayama, Ryouta Hori, Tetsuya Tamura, Hiroshi Yano, Takashi Fuyuki (NAIST) SDM2012-116 |
Silicon carbide (SiC) could be etched by a plasmaless process in chlorine based ambient over 900oC. The etch pits were f... [more] | SDM2012-116 pp.7-12 |
| SDM | 2012-12-07 10:45 |
Kyoto | Kyoto Univ. (Katsura) | Effects of phosphorus incorporation into SiO2/SiC interface on electrical properties of MOS capacitors fabricated on 4H-SiC(11-20) Nao Umezawa, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2012-118 |
We have already reported that the interface state density of MOS capacitors on n-type 4H-SiC (0001) and (000-1) faces ca... [more] | SDM2012-118 pp.19-23 |
| ED, SDM, CPM | 2012-05-18 11:15 |
Aichi | VBL, Toyohashi Univ. of Technol. | Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33 |
Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never complet... [more] | ED2012-31 CPM2012-15 SDM2012-33 pp.67-72 |
| SDM | 2011-12-16 10:40 |
Nara | NAIST | Effects of POCl3 Annealing on SiO2/p-type 4H-SiC Interface properties Toshimitsu Takaue, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2011-134 |
We have already reported that the interface state density for n-type 4H-SiC MOS structures can be greatly reduced by POC... [more] | SDM2011-134 pp.11-15 |
| SDM | 2009-12-04 09:40 |
Nara | NAIST | Reduction of interface state density in 4H-SiC MOS interface by incorporation of phosphorus atoms Dai Okamoto, Hiroshi Yano, Kenji Hirata, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2009-152 |
A change in the interface state density in 4H-SiC metal-oxide-semiconductor (MOS) structures by incorporation of various... [more] | SDM2009-152 pp.5-10 |
| SDM | 2008-12-05 14:10 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Electrical properties of 4H-SiC MOS devices fabricated on C-face with NO direct oxidation Yuki Oshiro, Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Institute of Science and Technology) SDM2008-190 |
[more] | SDM2008-190 pp.31-35 |
| CPM, ED, SDM | 2008-05-16 15:05 |
Aichi | Nagoya Institute of Technology | Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method Yoshinori Matsushita, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2008-20 CPM2008-28 SDM2008-40 |
Silicon Carbide (SiC) is a promising material for high power and high frequency devices. However we cannot transfer thes... [more] | ED2008-20 CPM2008-28 SDM2008-40 pp.95-100 |
| SDM, OME | 2008-04-11 14:05 |
Okinawa | Okinawa Seinen Kaikan | Degradation of Ga2o3-In2O3-Zno(GIZO) Thin Film Transistors Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ji Sim Jung, Jang Yeon Kwon (Sumsung Advenced Institute of Technology) SDM2008-10 OME2008-10 |
We have investigated a degradation of Ga2O3-In2O3-ZnO（GIZO）thin film transistor under DC stress. For a positive gate bia... [more] | SDM2008-10 OME2008-10 pp.47-50 |
| SDM | 2007-12-14 16:40 |
Nara | Nara Institute Science and Technology | Charge-Pumping Measurement on 4H-SiC nMOSFETs and pMOSFETs Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Inst. Sci. Tech.) SDM2007-234 |
Charge-pumping measurements were conducted on n-channel and p-channel 4H-SiC MOSFET’s with and without NO annealing. The... [more] | SDM2007-234 pp.51-54 |
| SDM | 2007-06-07 16:45 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Effects of High-Pressure H2O Vapor annealing on SiO2/4H-SiC Interface Properties and MOSFET Performance Hiroshi Yano, Daisuke Takeda, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST) SDM2007-38 |
High-pressure H2O vapor annealing was performed for 4H-SiC MOS structures to modify interface properties and MOSFET perf... [more] | SDM2007-38 pp.37-42 |
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