Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EMCJ |
2022-04-15 14:45 |
Okinawa |
(Primary: On-site, Secondary: Online) |
Analysis of Crosstalk Suppression by Low-Impedance PDN Using Ultra-Thin and High Dielectric Permittivity Substrates Taiki Kitazawa, Youngwoo Kim, Daisuke Fujimoto, Yuichi Hayashi (NAIST) EMCJ2022-5 |
The high impedance power delivery network (PDN) induced crosstalk is caused by the return current discontinuity of signa... [more] |
EMCJ2022-5 pp.25-30 |
AP, MW (Joint) |
2016-09-16 09:00 |
Ibaraki |
AIST |
Physical properties and electromagnetic replying of a carbon fiber to the 2.45 GHz band Jun-ichi Sugiyama (AIST), Maki Morizumi (ISMA), Hiroaki Zushi (Univ. Tokyo) MW2016-82 |
When the cylindrical cavity resonator is used for the perturbation method, loading dielectrics such as the deionized wat... [more] |
MW2016-82 pp.47-52 |
MW, WPT |
2016-04-21 14:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Interpretation of the resonant frequency high frequency shift in case of loading with the conductivity material Jun-ichi Sugiyama, Maki Morizumi, Chika Sato (AIST) WPT2016-7 MW2016-7 |
When microwave device is used for heating, the loading with dielectrics such as the deionized water in a resonator, the ... [more] |
WPT2016-7 MW2016-7 pp.33-38 |
MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] |
2014-01-24 09:00 |
Kyoto |
Doshisha University |
Electromagnetic Simulation of High Resistance Silicon Substrate by Helium ion Irradiation Yuki Yao, Takuichi Hirano, Ning Li, Kenichi Okada, Akira Matsuzawa, Jiro Hirokawa, Makoto Ando (Tokyo Inst. of Tech.), Takeshi Inoue, Akinori Masaoka, Hitoshi Sakane (SEI) PN2013-61 OPE2013-175 LQE2013-161 EST2013-110 MWP2013-81 |
A helium(He)-3 ion bombardment technique has been proposed for creating locally high resistivity silicon substrate areas... [more] |
PN2013-61 OPE2013-175 LQE2013-161 EST2013-110 MWP2013-81 pp.181-185 |
MW |
2013-12-20 09:25 |
Saitama |
Saitama Univ. |
Consideration on Transmission Characteristics of Embedded Type of High Permittivity Transmission Line at Millimeter-wave Bands Futoshi Kuroki, Satoshi Kitabayashi (KNCT) MW2013-165 |
The embedded type of high permittivity transmission line which shows a low loss characteristics in a flat dispersion ban... [more] |
MW2013-165 pp.81-84 |
ED, MW |
2012-01-11 10:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
A Fundamental Study on Super Thin One-Layered Wave Absorber Using a High Dielectric Loss Material in Microwave Band Takato Fujita, Yuki Tsuda, Takenori Yasuzumi, Osamu Hashimoto (Aoyama Gakuin Univ.), Takashi Wano, Yuuki Fukuda (NITTO Denko LTD.) ED2011-120 MW2011-143 |
In this paper, the fabrication of a super thin wave absorber using a dielectric loss material was studied.Firstly, the r... [more] |
ED2011-120 MW2011-143 pp.7-12 |
EMCJ |
2010-01-21 13:15 |
Okinawa |
University of the Ryukyus |
Estimation of Complex Dielectric Constant in High Frequency by using Scattering Wave Takashi Komakine, Takahiro Kurosawa (Akita Prefectural R&D Center), Hiroshi Inoue (Akita Univ.) EMCJ2009-104 |
The dielectric is one of the most important materials for electric devices. To evaluate the permittivity for high freque... [more] |
EMCJ2009-104 pp.37-40 |
RCS, AP, WBS, SR, MW, MoNA (Joint) |
2006-03-03 15:40 |
Kanagawa |
YRP |
- Futoshi Kuroki, Kazuya Miyamoto (KNCT) |
A new transmission media using high permittivity dielectric materials was proposed for mass productivity of dielectric w... [more] |
MW2005-187 pp.49-52 |
RCS, AP, WBS, SR, MW, MoNA (Joint) |
2006-03-03 16:20 |
Kanagawa |
YRP |
- Futoshi Kuroki, Kazuya Miyamoto (KNCT) |
Newly-proposed high permittivity tape transmission line was theoretically and experimentally investigated at millimeter-... [more] |
MW2005-189 pp.57-60 |
ICD, SDM |
2005-08-19 10:00 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
[Special Invited Talk]
HfSiON
-- its high applicability as the alternative gate dielectric based on the high thermal stability and the remaining issue -- Akira Nishiyama, Masato Koyama, Yuuichi Kamimuta, Masahiro Koike, Ryosuke Iijima, Takeshi Yamaguchi, Masamichi Suzuki, Tsunehiro Ino, Mizuki Ono (Toshiba) |
The decrease in the MOS device size has long been requiring the thinning of its gate dielectrics. In order to suppress t... [more] |
SDM2005-146 ICD2005-85 pp.19-24 |