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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED, CPM | 2019-05-17 12:00 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Study of Fabrication Process for Nitride-based Semiconductor Integrated Circuits
-- Threshold voltage control by Si-ion implantation -- Hiroshi Okada, Taichi Yokoyama, Kiyomasa Miwa, Keisuke Yamane, Akihiro Wakahara, Hiroto Sekiguchi (Toyohashi Tech.)  ED2019-26 CPM2019-17 SDM2019-24 |
[more] | ED2019-26 CPM2019-17 SDM2019-24 pp.77-80 |
| CPM, LQE, ED | 2016-12-13 11:20 |
Kyoto | Kyoto University | Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip Kazuaki Tsuchiyama, Shu Utsuhomiya, Shota Nakagawa, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2016-73 CPM2016-106 LQE2016-89 |
A Si/SiO2/GaN-LED structure was fabricated by surface activated bonding method, and a GaN-µLED driver circuit consi... [more] | ED2016-73 CPM2016-106 LQE2016-89 pp.79-83 |
| CPM, ED, SDM | 2016-05-19 15:00 |
Shizuoka | Shizuoka University, Hamamatsu campus (Joint Research Lab.) | Investigation of interface formation process between insulator and nitride-semiconductor for insulated gate transistors Yutaka Kondo, Masatoshi Shinohara, Tomoki Hikosaka, Makoto Baba (Toyohashi Univ. Technol.), Hiroshi Okada (EIIRIS, Toyohashi Univ. Technol.), Hiroto Sekiguchi, Keisuke Yamane, Akihiro Wakahara (Toyohashi Univ. Technol.) ED2016-17 CPM2016-5 SDM2016-22 |
[more] | ED2016-17 CPM2016-5 SDM2016-22 pp.19-23 |
| CPM, ED, SDM | 2016-05-20 11:55 |
Shizuoka | Shizuoka University, Hamamatsu campus (Joint Research Lab.) | Interface control for III-V/Si hetero-epitaxy Keisuke Yamane, Hiroto Sekiguchi (Toyohashi Tech.), Hiroshi Okada (EIIRIS), Akihiro Wakahara (Toyohashi Tech.) ED2016-26 CPM2016-14 SDM2016-31 |
This paper focuses a formation process of the first atomic layer on Si substrates for GaP/Si heteroepitaxy. It is clarif... [more] | ED2016-26 CPM2016-14 SDM2016-31 pp.61-65 |
| ED, CPM, SDM | 2015-05-28 15:15 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Control of N composition of GaAsN alloy grown by surface nitridation Noriyuki Urakami, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2015-20 CPM2015-5 SDM2015-22 |
We researched growth conditions effect for N composition and luminescence property on dilute nitride GaAsN alloy grown b... [more] | ED2015-20 CPM2015-5 SDM2015-22 pp.21-26 |
| CPM, ED, SDM | 2014-05-28 16:30 |
Aichi | Chemical Vapor Deposition of Silicon Nitride Films Enhanced by Surface-Wave Plasma and Electron Device Application Kyohei Kawakami, Takahiro Ishimaru, Masatoshi Shinohara, Hiroshi Okada (Toyohashi Tech), Masakzu Furukawa (Aries Research Group), Akihiro Wakahara, Hiroto Sekiguchi (Toyohashi Tech) ED2014-29 CPM2014-12 SDM2014-27 |
New chemical vapor deposition technique using surface-wave plasma is proposed, and silicon nitride film deposition is ma... [more] | ED2014-29 CPM2014-12 SDM2014-27 pp.55-58 |
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| SDM, ED, CPM | 2013-05-16 15:45 |
Shizuoka | Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. | Formation of GaAsN alloys by surface nitridation Noriyuki Urakami, Akihiro Wakahara, Hiroto Sekiguchi, Hiroshi Okada (Toyohashi Univ. of Tech.) ED2013-20 CPM2013-5 SDM2013-27 |
GaAsN alloys was grown by surface nitridation and applied for the growth of quantum well (QW). Increase of incorporation... [more] | ED2013-20 CPM2013-5 SDM2013-27 pp.23-26 |
| ED, LQE, CPM | 2012-11-30 11:00 |
Osaka | Osaka City University | Fabrication of red light emitting diode with GaN:Eu,Mg active layer Tatsuki Otani, Hiroto Sekiguchi (Toyohashi Univ. Tech), Yasufumi Takagi (Hamamatsu Photonics K.K.), Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech) ED2012-80 CPM2012-137 LQE2012-108 |
Rare-earth doped semiconductor is a promising candidate for next generation light-emitting devices due to superior optic... [more] | ED2012-80 CPM2012-137 LQE2012-108 pp.65-70 |
| ED, SDM, CPM | 2012-05-17 13:40 |
Aichi | VBL, Toyohashi Univ. of Technol. | Improvement in crystalline quality of GaAsN alloy by high temperature growth Futoshi Fukami, Noriyuki Urakami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2012-18 CPM2012-2 SDM2012-20 |
GaAsN alloys are one of the attractive candidates for the active layers of the luminescence devices on Si. Compared with... [more] | ED2012-18 CPM2012-2 SDM2012-20 pp.7-10 |
| ED, SDM, CPM | 2012-05-17 14:05 |
Aichi | VBL, Toyohashi Univ. of Technol. | Electrical properties of n- and p-type AlGaPN for dislocation-free light-emitting devices on Si substrate Hironari Ito, Keisuke Kumagai, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2012-19 CPM2012-3 SDM2012-21 |
AlGaPN alloys are expected as a cladding layer for Si based monolithic laser structure in optoelectronic integrated circ... [more] | ED2012-19 CPM2012-3 SDM2012-21 pp.11-14 |
| ED, SDM, CPM | 2012-05-18 10:25 |
Aichi | VBL, Toyohashi Univ. of Technol. | Electrical Property of n-type GaPN:S Grown by Alternately N Supplied Organometallic Vapor Phase Epitaxy Yuya Nagamoto, Katsuhiko Matsuoka, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (TUT) ED2012-29 CPM2012-13 SDM2012-31 |
[more] | ED2012-29 CPM2012-13 SDM2012-31 pp.57-61 |
| LQE, ED, CPM | 2011-11-18 10:45 |
Kyoto | Katsura Hall，Kyoto Univ. | Effect of Mg co-doping on optical characteristics of GaN:Eu Hiroto Sekiguchi (Toyohashi Univ. Tech.), Yasufumi Takagi (Hamamatsu Photonics), Tatsuki Otani, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2011-91 CPM2011-140 LQE2011-114 |
Rare-earth doped semiconductor is a promising candidate for next generation light-emitting devices due to superior optic... [more] | ED2011-91 CPM2011-140 LQE2011-114 pp.93-97 |
| CPM, SDM, ED | 2011-05-19 13:50 |
Aichi | Nagoya Univ. (VBL) | Molecular beam epitaxy growth of AlGaPN alloys for optical confinement structure on Si substrate Keisuke Kumagai, Kohei Shoji, Tsuyoshi Kawai, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ.Tech.) ED2011-10 CPM2011-17 SDM2011-23 |
An AlP-based dilute nitride is one of the candidates for the cladding layer of laser structure in a Si-based optoelectro... [more] | ED2011-10 CPM2011-17 SDM2011-23 pp.49-54 |
| CPM, SDM, ED | 2011-05-19 14:15 |
Aichi | Nagoya Univ. (VBL) | Molecular beam epitaxy growth of BGaP Noriyuki Urakami, Futoshi Fukami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2011-11 CPM2011-18 SDM2011-24 |
Growth properties of dilute BGaP layers have been investigated by molecular beam epitaxy for strain compensation layers ... [more] | ED2011-11 CPM2011-18 SDM2011-24 pp.55-58 |
| CPM, SDM, ED | 2011-05-20 14:40 |
Aichi | Nagoya Univ. (VBL) | Evaluation of Pt/GaN Schottky barrier diode for CO gas sensor operating in high temperatures Daichi Maruyama, Hiroshi Okada, Hiroto Sekiguchi, Akihiro Wakahara (Toyohashi Univ. of Tech) ED2011-30 CPM2011-37 SDM2011-43 |
Pt/GaN Schottky barrier diode (SBD) was fabricated for CO gas detection in high temperatures. Thermal and pressure chara... [more] | ED2011-30 CPM2011-37 SDM2011-43 pp.151-155 |
| AP | 2011-05-12 15:05 |
Kagoshima | Experimental Study on Characteristics of Electromagnetic Wave Transmission in Fractal Structure Jun Sonoda, Norihiko Tanji, Keimei Kaino (SNCT), Motoyuki Sato, Naoki Hayashi (Tohoku Univ.), Tsunehiro Obata (GNCT), Akihiro Wakahara (TUT) AP2011-12 |
Characteristics of electromagnetic wave transmission and resonance inside and outside the Cantor structure, which is one... [more] | AP2011-12 pp.37-42 |
|
| EMCJ | 2011-01-28 09:25 |
Kumamoto | Kumamoto National College of Technology | Control of Transmission and Resonance of Electromagnetic Wave by Division Width in Cantor Structure Norihiko Tanji, Jun Sonoda, Keimei Kaino (SNCT), Motoyuki Sato (Tohoku Univ.), Tsunehiro Obata (GNCT), Akihiro Wakahara (TUT) EMCJ2010-101 |
Several studies have shown that peak value and Q value of electromagnetic wave propagation in the Cantor structure, whic... [more] | EMCJ2010-101 pp.7-11 |
| SDM, CPM, ED | 2010-05-13 14:20 |
Shizuoka | Shizuoka University (Hamamatsu Campus) | Study of Light Emitting Device Based-on AlGaN/GaN:Eu HEMT structure Masaki Kondo, Takayuki Hata, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Shin-ichiro Sato, Takeshi Ohshima (JAEA) ED2010-19 CPM2010-9 SDM2010-19 |
[more] | ED2010-19 CPM2010-9 SDM2010-19 pp.11-16 |
| SDM, CPM, ED | 2010-05-14 13:30 |
Shizuoka | Shizuoka University (Hamamatsu Campus) | Intelligent UV sensor composed of GaN-based photodiode and Si-charge transfer type signal processor ChangYong Lee, Fumiya Matsuno, Yoshinori Hashimoto, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2010-30 CPM2010-20 SDM2010-30 |
(To be available after the conference date) [more] | ED2010-30 CPM2010-20 SDM2010-30 pp.69-73 |
| SDM, CPM, ED | 2010-05-14 14:20 |
Shizuoka | Shizuoka University (Hamamatsu Campus) | Fabrication of 1-bit counter circuit with LED indicator using Si/III-V-N/Si structure Seizo Tanaka, Kenta Noguchi, Keisuke Yamane, Yuki Deguchi, Yuzo Furukawa, Hiroshi Okada, Akihiro Wakahara, Hiroo Yonezu (Toyohashi Univ. of Tech.) ED2010-32 CPM2010-22 SDM2010-32 |
We fabricated of 1-bit counter circuit with light-emitting diode (LED) indicators using semiconductor process technology... [more] | ED2010-32 CPM2010-22 SDM2010-32 pp.81-85 |
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