Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, OME |
2023-04-22 10:55 |
Okinawa |
Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Polycrystalline indium oxide thin-film transistors Mamoru Furuta, Xiaoqian Wang (Kochi Univ. of Tech.) SDM2023-10 OME2023-10 |
[more] |
SDM2023-10 OME2023-10 pp.34-36 |
OME, SDM |
2022-04-22 14:10 |
Miyazaki |
Takachiho Hall (Primary: On-site, Secondary: Online) |
Mechanism for improving electrical properties of InGaZnOx thin-film transistors through annealing Rostislav Velichko (KUT), Yusaku Magari (Shimane Univ.), Mamoru Furuta (KUT) SDM2022-4 OME2022-4 |
(To be available after the conference date) [more] |
SDM2022-4 OME2022-4 pp.17-20 |
OME, SDM |
2022-04-23 11:50 |
Miyazaki |
Takachiho Hall (Primary: On-site, Secondary: Online) |
[Invited Talk]
High-mobility (>100 cm2V-1s-1) In2O3:H Thin-film Transistors by Solid-phase Crystallization Yusaku Magari (Shimane Univ.), Taiki Kataoka (Kochi Univ. of Tech.), Wenchang Yeh (Shimane Univ.), Mamoru Furuta (Kochi Univ. of Tech.) SDM2022-13 OME2022-13 |
(To be available after the conference date) [more] |
SDM2022-13 OME2022-13 pp.61-64 |
SDM, OME |
2021-04-23 15:50 |
Okinawa |
Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Challenge for oxide TFTs toward LTPS TFTs Mamoru Furuta (Kochi Univ. of Technol.) SDM2021-5 OME2021-5 |
[more] |
SDM2021-5 OME2021-5 pp.19-21 |
EID, SDM, ITE-IDY [detail] |
2020-12-02 14:30 |
Online |
Online |
[Special Invited Talk]
Defects control in oxide semiconductors at low-temperature and its application to flexible devices Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.) EID2020-10 SDM2020-44 |
High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum p... [more] |
EID2020-10 SDM2020-44 pp.37-41 |
SDM, OME |
2020-04-14 10:40 |
Okinawa |
Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
[Invited Talk]
Oxide vs. poly-Si TFTs Mamoru Furuta (KUT) |
[more] |
|
OME, SDM |
2019-04-26 15:20 |
Kagoshima |
Yakushima Environmental and Culture Village Center |
Heterojunction channel IGZO Thin-Film Transistor Mamoru Furuta, Daichi Koretomo, Ryunosuke Higashi, Shuhei Hamada (KUT.) SDM2019-6 OME2019-6 |
[more] |
SDM2019-6 OME2019-6 pp.23-26 |
EID, SDM, ITE-IDY [detail] |
2018-12-25 11:45 |
Kyoto |
|
Device Using Thin Film of GTO by MistCVD Method Yuta Takishita (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
[more] |
|
EID, SDM, ITE-IDY [detail] |
2018-12-25 14:30 |
Kyoto |
|
Dependence of thermoelectric properties and structure of Ga-Sn-O thin films on annealing Yoku Ikeguchi, Tatsuya Aramaki (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Mutsumi Kimura (Ryukoku Univ.) |
[more] |
|
SDM, OME |
2018-04-07 13:10 |
Okinawa |
Okinawaken Seinen Kaikan |
[Invited Talk]
properties of IGZO thin-film transistors. Mamoru Furuta, Aman S G Mehadi, Daichi Koretomo, Yusaku Magari (Kochi Univ. of Tech.) SDM2018-6 OME2018-6 |
(To be available after the conference date) [more] |
SDM2018-6 OME2018-6 pp.25-28 |
SDM, OME |
2018-04-07 13:50 |
Okinawa |
Okinawaken Seinen Kaikan |
Thin-film transistor with InGaZnOx-hetero-channel Ryunosuke Higashi, Daichi Koretomo, Hirosato Tanaka (Kochi Univ. of Tech.), Seiichiro Takahashi, Isamu Yashima (Mitsui Mining & Smelting Co.,LTD), Mamoru Furuta (Kochi Univ. of Tech.) SDM2018-7 OME2018-7 |
(To be available after the conference date) [more] |
SDM2018-7 OME2018-7 pp.29-31 |
SDM, OME |
2018-04-07 14:15 |
Okinawa |
Okinawaken Seinen Kaikan |
Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device. Yusaku Magari, Hisao Makino, Shinsuke Hashimoto, Kenichiro Hamada, Kentaro Masuda, Mamoru Furuta (Kochi Univ. of Tech.) SDM2018-8 OME2018-8 |
Oxide heterojunction of the In–Ga–Zn–O (IGZO) and the silver oxide (AgOX) has been reported to exhibit better Schottky c... [more] |
SDM2018-8 OME2018-8 pp.33-36 |
SDM, OME |
2016-04-09 10:10 |
Okinawa |
Okinawa Prefectural Museum & Art Museum |
[Invited Talk]
Low-temperature processed self-aligned InGaZnO thin-film transistors for flexible device applications Mamoru Furuta, Tatsuya Toda, Gengo Tatsuoka, Yusaku Magari (Kochi Univ. of Technol.) SDM2016-13 OME2016-13 |
[more] |
SDM2016-13 OME2016-13 pp.53-56 |
SDM, OME |
2016-04-09 10:50 |
Okinawa |
Okinawa Prefectural Museum & Art Museum |
Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors
-- Influence of carrier concentration in back-channel region -- Daichi Koretomo, Tatsuya Toda (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Mamoru Furuta (KUT) SDM2016-14 OME2016-14 |
The influence of high carrier concentration region in In-Ga-Zn-O (IGZO ) on the electrical properties of a bottom-gate I... [more] |
SDM2016-14 OME2016-14 pp.57-60 |
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2016-01-28 15:04 |
Toyama |
Toyama Univ. |
Plasma treatment for source/drain regions of self-aligned InGaZnO thin-film transistors
-- Effects of substrate bias during the plasma treatment of IGZO. -- Yusaku Magari, Tatsuya Toda, Hisao Makino, Mamoru Furuta (Kochi Univ. of Technol.) EID2015-31 |
[more] |
EID2015-31 pp.41-44 |
OME, SDM |
2015-04-29 17:05 |
Okinawa |
Oh-hama Nobumoto Memorial Hall |
Effect of fluorine in In-Ga-Zn-O on defect passivartion and reliability of thin-film transistors Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka, Dapeng Wang (Kochi Univ. of Tech.) SDM2015-8 OME2015-8 |
Effets of fluorine in In-Ga-Zn-O on defect passivation and reliability improvement of thin-film transistor have been inv... [more] |
SDM2015-8 OME2015-8 pp.31-34 |
SDM, EID |
2014-12-12 15:15 |
Kyoto |
Kyoto University |
Characterization of the touch panel circuit using ITZO TFTs Yuki Koga, Tokiyoshi Matsuda (Ryukoku Univ.), Mamoru Furuta (Kochi Univ. of Technol.), Mutsumi Kimura (Ryukoku Univ.) EID2014-30 SDM2014-125 |
Oxide TFTs using ITZO for the active layer (ITZO TFTs) have attracted attention as a driving element of flatpanel displ... [more] |
EID2014-30 SDM2014-125 pp.89-93 |
SDM |
2013-12-13 09:00 |
Nara |
NAIST |
Analysis of thermal-induced degradation in oxide thin-film transistor under pulse voltage stress Kahori Kise (NAIST), Shigekazu Tomai (Idemitsu Kosan), Yoshihiro Ueoka, Haruka Yamazaki, Satoshi Urakawa (NAIST), Koki Yano (Idemitsu Kosan), Dapeng Wang, Mamoru Furuta (Kochi Univ. of Tech.), Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2013-116 |
In recent years, transparent amorphous oxide semiconductor (TAOS), represented by a-InGaZnO have been reported. Because ... [more] |
SDM2013-116 pp.1-5 |
ITE-IDY, EID, IEE-EDD |
2013-01-25 10:10 |
Shizuoka |
Shizuoka Univ. |
Fabrication and properties of Oxide TFT stacked with IGZO/AlOx prepared by non-vacuum process "mist CVD" Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Mamoru Furuta (KUT) |
[more] |
|
SDM |
2011-12-16 13:30 |
Nara |
NAIST |
[Invited Talk]
Influence of subgap density of states on electrical properties and reliability of ZnO TFT. Mamoru Furuta, Shin-ichi Shimakawa (Kochi Univ. of Tech.) SDM2011-139 |
[more] |
SDM2011-139 pp.37-41 |