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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, ED |
2021-01-29 13:00 |
Online |
Online |
DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS) ED2020-31 MW2020-84 |
GaN high-electron-mobility transistors (HEMTs) are very attractive for the fifth generation communication system. To bui... [more] |
ED2020-31 MW2020-84 pp.22-25 |
SDM |
2019-06-21 16:45 |
Aichi |
Nagoya Univ. VBL3F |
Chemical Structure and Electronic States of HfSiOx/GaN(0001) Akio Ohta, Katunori Makihara (Nagoya Univ.), Toshihide Nabatame (NIMS), Koji Shiozaki, Seiichi Miyazaki (Nagoya Univ.) SDM2019-35 |
A HfSiOx layer with different Hf/(Hf+Si) composition ratio was formed on wet chemically-cleaned GaN(0001) using ALD, and... [more] |
SDM2019-35 pp.47-51 |
SDM |
2018-06-25 12:00 |
Aichi |
Nagoya Univ. VBL3F |
Influence of native oxide layer on electrical characteristics of Al2O3/n-GaN capacitors Kazuya Yuge (SIT), Toshihide Nabatame, Yoshihiro Yoshikawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide (NIMS), Tomoji Ohishi (SIT) SDM2018-19 |
In this study, the effects of the native oxide interfacial layer (Ga$_2$O$_3$) on the fixed charge and dipole formation ... [more] |
SDM2018-19 pp.15-18 |
SDM |
2017-10-26 10:50 |
Miyagi |
Niche, Tohoku Univ. |
Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame (NIMS/JST), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2017-57 |
The effect of crystallized ZrO2 seed layers, which inserted between a TiN bottom electrode and a ferroelectric HfxZr1-xO... [more] |
SDM2017-57 pp.39-44 |
SDM |
2016-06-29 11:55 |
Tokyo |
Campus Innovation Center Tokyo |
Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST-CREST), Kazunori Kurishima (Meiji Univ./NIMS), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.) SDM2016-37 |
We studied characteristic of DRAM capacitors with ZrO2/Al2O3/ZrO2 (ZAZ) multilayer fabricated by atomic layer deposition... [more] |
SDM2016-37 pp.27-32 |
SDM |
2015-06-19 15:15 |
Aichi |
VBL, Nagoya Univ. |
Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51 |
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] |
SDM2015-51 pp.69-73 |
SDM |
2014-06-19 11:45 |
Aichi |
VBL, Nagoya Univ. |
Characteristics of charge trap flash memory with Al2O3/(Ta/Nb)Ox/Al2O3 multi-layer by ALD method Toshihide Nabatame, Akihiko Ohi (NIMS), Kazuhiro Ito, Makoto Takahashi (Osaka Univ.), Toyohiro Chikyow (NIMS) SDM2014-49 |
We studied characteristics of the p-Si/SiO2/Al2O3-TL/(Ta/Nb)Ox-CTL/Al2O3-BL/Pt capacitors, fabricated by using ALD at 20... [more] |
SDM2014-49 pp.31-35 |
SDM |
2013-06-18 10:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge Kazuyoshi Kobashi (Meiji Univ.), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS) SDM2013-48 |
As a alternative of Si channel, the Ge channel has been proposed and has attracted much attention because of high electr... [more] |
SDM2013-48 pp.25-28 |
SDM |
2012-06-21 12:15 |
Aichi |
VBL, Nagoya Univ. |
Evaluation of Al atoms as a function of annealing temperature for (TaC)1-xAlx/HfO2 gate stack Masayuki Kimura (Shibaura Inst. of Tech.), Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi, Toshihiro Narushima, Toyohiro Chikyow (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.) |
Al-incorporated TaC ((TaC)1-xAlx) (x=0-0.33)) thin films were used as gate electrode to control Vfb for HfO2 MOS capacit... [more] |
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SDM |
2011-07-04 15:00 |
Aichi |
VBL, Nagoya Univ. |
The effect of oxidation and reduction annealing on Vfb shift in ITO/HfO2 MOS capacitors Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.), Toyohiro Chikyow (NIMS) SDM2011-64 |
We investigated effect of oxidation and reduction annealing on Vfb for In0.9Sn0.1 (ITO)/HfO2 (4.9 nm)/SiO2 MOS capacitor... [more] |
SDM2011-64 pp.81-85 |
SDM |
2009-06-19 15:10 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38 |
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] |
SDM2009-38 pp.67-70 |
SDM |
2008-06-10 10:55 |
Tokyo |
An401・402, Inst. Indus. Sci., The Univ. of Tokyo |
The role of the high-k/SiO2 interface in the control of the threshold voltage for high-k MOS devices Kunihiko Iwamoto, Yuuichi Kamimuta (MIRAI-ASET), Yu Nunoshige (Shibaura Institute of Technology), Akito Hirano, Arito Ogawa, Yukimune Watanabe (MIRAI-ASET), Shinji Migita, Wataru Mizubayashi, Yukinori Morita (MIRAI-ASRC, AIST), Masashi Takahashi (MIRAI-ASET), Hiroyuki Ota (MIRAI-ASRC, AIST), Toshihide Nabatame (MIRAI-ASET), Akira Toriumi (The University of Tokyo) SDM2008-51 |
[more] |
SDM2008-51 pp.53-58 |
SDM |
2006-06-22 14:15 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
unknown Wataru Mizubayashi (MIRAI-ASRC, AIST), Arito Ogawa, Toshihide Nabatame, Hideki Satake (MIRAI-ASET), Akira Toriumi (MIRAI-ASRC, AIST, Univ. of Tokyo) |
[more] |
SDM2006-61 pp.107-111 |
ICD, SDM |
2005-08-19 11:10 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
Improvement of threshold voltage asymmetry by Al compositional mudulation and partially silicided gate electrode for Hf-based high-k CMOSFETs Masaru Kadoshima, Arito Ogawa, Masashi Takahashi (MIRAI-ASET), Hiroyuki Ota (MIRAI-ASRC, AIST), Nobuyuki Mise, Kunihiko Iwamoto (MIRAI-ASET), Shinji Migita (MIRAI-ASRC, AIST), Hideaki Fujiwara, Hideki Satake, Toshihide Nabatame (MIRAI-ASET), Akira Toriumi (MIRAI-ASRC, AIST, The Univ. of Tokyo) |
Threshold voltage (Vth) tuning by engineering Fermi-level pinning (FLP) on HfAlOx(N) dielectrics is demonstrated for CMO... [more] |
SDM2005-148 ICD2005-87 pp.31-36 |
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