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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, OPE, LQE, R, EMD 2015-08-27
11:00		 Aomori Aomori-Bussankan-Asupamu Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator
Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Juan Paolo Bermundo (NAIST), Eiji Takahashi, Yasunori Andoh (Nissin Electric), Yukiharu Uraoka (NAIST) R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32		 Considerable attention has been paid to amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) as per... [more] R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32
pp.9-11
EE 2015-01-30
12:30		 Kumamoto Sakura-No-Baba JOSAIEN Study on Technology of Wireless Power Transfer to High Voltage Region with Data Transfer Function
Junki Ishizaki (Doshisha Univ), Toshihiro Kubo, Yoshio Matsubara (Nissin Electric), Yasuhito Takahashi, Koji Fujiwara (Doshisha Univ) EE2014-37		 In electron beam processing system and ion implantation devices, since it is necessary to supply electric power to their... [more] EE2014-37
pp.49-53
EE, CPM 2013-01-25
11:40		 Kumamoto   Study on Technology Suitable to Long Gap Wireless Power Transfer to High Voltage Region
Ryota Gondo (Doshisha Univ.), Toshihiro Kubo, Yoshio Matsubara (NISSIN), Yasuhito Takahashi, Koji Fujiwara (Doshisha Univ.) EE2012-49 CPM2012-171		 In electron beam processing system and ion implantation devices, it is necessary to supply electric power to their high ... [more] EE2012-49 CPM2012-171
pp.123-128
SDM, ED
(Workshop)		 2012-06-28
09:30		 Okinawa Okinawa Seinen-kaikan Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar structures by Conducting-Probe Atomic Force Microscopy
Daichi Takeuchi, Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.), Hirokazu Kaki, Tsukasa Hayashi (NISSIN ELECTRIC Co. Ltd.,) 		 [more]
ED, SDM, CPM 2012-05-18
14:15		 Aichi VBL, Toyohashi Univ. of Technol. Characterization of Local Electronic Transport and Electronic Emission Properties of Pillar-Shaped Si Nanostructures
Daichi Takeuchi, Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.), Hirokazu Kaki, Tsukasa Hayashi (NISSIN ELECTRIC Co. Ltd.) ED2012-36 CPM2012-20 SDM2012-38		  [more] ED2012-36 CPM2012-20 SDM2012-38
pp.95-98
SDM, OME 2012-04-27
17:10		 Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Bottom Gate TFT using Low Temperature Deposited Nanocrystalline-Si
Asuka Syuku, Eiji Takahashi, Yasunori Andoh (Nissin Electric) SDM2012-10 OME2012-10		 Thin film transistors (TFTs) with nanocrystalline silicon (nc-Si) films which were directly deposited on substrate at 15... [more] SDM2012-10 OME2012-10
pp.45-48
EE 2012-01-26
09:55		 Nagasaki   Experimental Verification of Isolated Bidirectional DC-DC Converter
Masayuki Kato, Yasuhito Takahashi, Koji Fujiwara, Yoshiyuki Ishihara (Doshisha Univ.), Kazuya Sugawara, Masashi Ogura, Yoshifumi Minowa, Nobuhiro Kurio (Nissin Electric Co.,LTD.) EE2011-45		 Here we proposes an isolated bidirectional DC-DC converter that is suitable for use in a low-voltage, large-current batt... [more] EE2011-45
pp.81-86
EE 2011-01-27
15:45		 Kumamoto   Influence of Switching Device Output Capacitance for Circuit Operation and Efficiency in Bidirectional DC-DC Converter
Masayuki Kato, Yasuhito Takahashi, Koji Fujiwara, Yoshiyuki Ishihara (Doshisha Univ), Masashi Ogura, Yoshifumi Minowa, Nobuhiro Kurio (Nissin Electric Co.,LTD.) EE2010-29		 This paper presents a influence of switching device output capacitance for circuit operation and efficiency of a propose... [more] EE2010-29
pp.5-9
EE 2010-01-22
13:00		 Fukuoka   Experimental Verification of A Voltage clamp ZVS-PWM Bidirectional DC-DC Converter
Masahiro Kitagawa, Koji Fujiwara, Yoshiyuki Ishihara (Doshisha Univ.), Masashi Ogura, Yoshifumi Minowa, Nobuhiro Kurio (Nissin Electric) EE2009-46		 This paper proposes an isolated bidirectional DC-DC converter that is suitable for use in a low-voltage, large-current b... [more] EE2009-46
pp.59-64
 Results 1 - 9 of 9  /   
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