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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2016-07-23 15:05 |
Tokyo |
Tokyo Metropolitan Univ. Minami-Osawa Campus, International House |
Effects of post-deposition anneal on SiO2 layer on Ga2O3 Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2016-29 |
Ga2O3 is an attractive new oxide semiconductor for next-generation power devices due to its extremely large bandgap of 4... [more] |
ED2016-29 pp.11-15 |
SDM |
2015-06-19 10:10 |
Aichi |
VBL, Nagoya Univ. |
[Invited Lecture]
Al2O3/Ga2O3 interface structure and its surface orientation dependence Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) SDM2015-40 |
The interface state densities (Dit) of Al2O3/n-Ga2O3 (010) and Al2O3/n-Ga2O3 ("2" ̅01) were evaluated with Hi-Lo C... [more] |
SDM2015-40 pp.11-16 |
ED |
2014-08-01 15:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-1 |
Band offset at Al2O3/β-Ga2O3 Heterojunctions Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2014-60 |
The band alignment of Al2O3/n-Ga2O3 (010) was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of... [more] |
ED2014-60 pp.41-46 |
ED |
2013-08-08 17:10 |
Toyama |
University of Toyama |
Characterization of Al2O3/ n-Ga2O3 MOS diodes Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki (Tamura Corp.), Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2013-43 |
[more] |
ED2013-43 pp.29-32 |
ED, LQE, CPM |
2012-11-29 13:55 |
Osaka |
Osaka City University |
Pt/β-Ga2O3 Schottky Barrier Diodes Using Single-Crystal β-Ga2O3 Substrates Kohei Sasaki (Tamura Corp./NICT), Masataka Higashiwaki (NICT/JST), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co.), Shigenobu Yamakoshi (Tamura Corp.) ED2012-71 CPM2012-128 LQE2012-99 |
We fabricated gallium oxide ($Ga_2O_3$) Schottky barrier diodes using $\beta-Ga_2O_3$ (010) single crystal substrates pr... [more] |
ED2012-71 CPM2012-128 LQE2012-99 pp.25-28 |
SDM, ED (Workshop) |
2012-06-29 09:15 |
Okinawa |
Okinawa Seinen-kaikan |
[Invited Talk]
New widegap semiconductor Ga2O3 MESFETs and Schottky barrier diodes Masataka Higashiwaki (NICT/JST), Kohei Sasaki (Tamura Corp./NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.) |
{$\beta$}-gallium oxide (Ga{$_{2$}}O{$_{3}$}) has excellent material properties for power device applications represente... [more] |
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