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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2018-01-26 09:40 |
Shizuoka | Shizuoka Univ., Hamamatsu | Luminescent properties in ZnO thin films prepared by mist-CVD method Katsuya Nakada, Takeshi Kanno, Yoshiki Saito, Shogo Saeki, Satoshi Yamaji, Haruki Fukada, Atsushi Yamaguchi (KIT) |
[more] | |
| SCE | 2016-08-08 14:15 |
Saitama | Saitama Univ. (Omiya sonic city) | Performance evaluation of TES microcalorimeter for Nuclear Clock Keisei Maehisa, Tasuku Hayashi, Haruka Muramatsu, Kazuhisa Mitsuda, Noriko Yamasaki (JAXA), Atsushi Yamaguchi (RIKEN), Kyousuke Maehata (Kyushu Univ.)  SCE2016-19 |
(To be available after the conference date) [more] | SCE2016-19 pp.37-39 |
| ED | 2016-01-20 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
The unique features of GaN power devices and the technologies to utilize their innate advantages Ken Nakahara, Kentaro Chikamatsu, Atsushi Yamaguchi, Naotaka Kuroda (ROHM) ED2015-115 |
The GaN power device have a very low value of RonQg as a figure of merit for power devices, where Ron denotes on-state r... [more] | ED2015-115 pp.19-24 |
| LQE, ED, CPM | 2014-11-27 13:15 |
Osaka | Emission characteristics of InGaN-MQW structures on m-plane GaN substrates Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical), Atsushi Yamaguchi (Kanazawa Inst. of Tech.) ED2014-77 CPM2014-134 LQE2014-105 |
We have investigated the optical characteristics of InGaN QWs on m-plane GaN substrates in order to understand the reaso... [more] | ED2014-77 CPM2014-134 LQE2014-105 pp.19-22 |
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| LQE, ED, CPM | 2014-11-27 13:40 |
Osaka | Optical Polarization Properties in non-c-oriented-InGaN Quantum Wells Shigeta Sakai, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical) ED2014-78 CPM2014-135 LQE2014-106 |
Optical polarization properties are very important factors for structural design of optoelectronic device using non- c-o... [more] | ED2014-78 CPM2014-135 LQE2014-106 pp.23-26 |
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| LQE, ED, CPM | 2014-11-27 14:30 |
Osaka | Two-Dimensional Strain Mapping of GaN Templates Fabricated by Nano-Channel FIELO Method Using Nanoimprint Lithography Masanori Nambu, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Hiroki Goto, Haruo Sunakawa, Toshiharu Matsueda (Furukawa Co. Ltd.), Akiko Okada (Waseda Univ.), Hidetoshi Shinohara, Hiroshi Goto (Toshiba Machine Co. Ltd.), Jun Mizuno (Waseda Univ.), Akira Usui (Furukawa Co. Ltd.) ED2014-80 CPM2014-137 LQE2014-108 |
The efficiency droop phenomenon is a big problem for high-brightness white LEDs. It has been pointed out that the proble... [more] | ED2014-80 CPM2014-137 LQE2014-108 pp.33-38 |
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| US | 2013-11-11 13:00 |
Ishikawa | Kanazawa Inst. Tech. | Research of ultrasonics generated by interaction between laser and material Yoshiaki Tokunaga, Haruki Fukada, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Akiyuki Minamide (KTC) US2013-53 |
We report on the ultrasonic waves are generated by using the interaction with lasers and materials. When a beam of He-Ne... [more] | US2013-53 pp.1-4 |
| ED | 2013-04-18 15:55 |
Miyagi | [Invited Talk]
Study of High Quality GaN Template by Nano-channel FIELO Using UV Nanoimprint Jun Mizuno, Akiko Okada, Shuichi Shoji (Waseda Univ.), Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Hiroki Goto, Haruo Sunakawa, Toshiharu Matsueda (Furukawa), Hidetoshi Shinohara, Hiromi Nishihara, Hiroshi Goto (Toshiba Machine), Akira Usui (Furukawa) ED2013-8 |
Nano-channel FIELO (facet-initiated lateral overgrowth) using UV nanoimprint has been proposed. The etch pit density mea... [more] | ED2013-8 pp.27-29 |
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| LQE, ED, CPM | 2011-11-18 10:20 |
Kyoto | Katsura Hall，Kyoto Univ. | 2D-mapping measurement of residual strain in GaN substrates by micro-reflectance spectroscopy Atsushi Yamaguchi (Kanazawa Inst. Tech.), H. Y. Geng, Haruo Sunakawa, Y. Ishihara, Toshiharu Matsueda, Akira Usui (Furukawa) ED2011-90 CPM2011-139 LQE2011-113 |
We have developed a novel method to precisely measure very small residual strains (~0.01%) in GaN substrates with micron... [more] | ED2011-90 CPM2011-139 LQE2011-113 pp.87-91 |
| CPM, LQE, ED | 2010-11-11 14:30 |
Osaka | A Comprehensive Understanding of Previously-Reported Polarization Properties in Nonpolar and Semipolar InGaN Quantum Wells Atsushi Yamaguchi (Kanazawa Inst. Tech.), Kazunobu Kojima (Kyoto Univ.) ED2010-148 CPM2010-114 LQE2010-104 |
A new method to obtain material parameters inversely from measured polarization properties has been developed, and we an... [more] | ED2010-148 CPM2010-114 LQE2010-104 pp.29-32 |
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| LQE, ED, CPM | 2008-11-28 10:15 |
Aichi | Nagoya Institute of Technology | Theroretical Calculations of Polarization Properties in InGaN Quantum Wells on Non-C (Al)InGaN Alloy Substrates Atsushi Yamaguchi (Kanazawa Inst. of Technology) ED2008-172 CPM2008-121 LQE2008-116 |
Polarization properties in InGaN quantum wells on non-C AlInGaN alloy substrates are theoretically investigated. It is s... [more] | ED2008-172 CPM2008-121 LQE2008-116 pp.97-102 |
| CPM, ED, LQE | 2007-10-11 13:05 |
Fukui | Fukui Univ. | Polarization Properties in III-nitride Quantum Wells with Various Substrate Orientations Atsushi Yamaguchi (Kanazawa Inst. of Technology) ED2007-156 CPM2007-82 LQE2007-57 |
Polarization properties in III-nitride quantum wells with various substrate orientations have been investigated theoreti... [more] | ED2007-156 CPM2007-82 LQE2007-57 pp.1-6 |
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