| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-06-26 13:30 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | [Invited Lecture]
Pioneering Nondestructive Imaging of Ferroelectric Capacitors by Operando Laser-Based Photoemission Electron Microscopy Hirokazu Fujiwara, Yuki Itoya, Masaharu Kobayashi, Cedric Bareille, Shik Shin, Toshiyuki Taniuchi (Univ. of Tokyo)  SDM2023-32 |
In order to elucidate the mechanism of characteristic modulations in HfO$_2$-based ferroelectric capacitors, an in-situ ... [more] | SDM2023-32 pp.19-22 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 11:40 |
Online | Online | Evaluation of dielectric properties of ferroelectric thin films for neural networks Yuma Ishisaki, Hiroki Umemura, Daiki Matsukawa, Mutsumi Kimura (RU), Eisuke Tokumitsu (JAIST), Kenichi Haga, Toshihiro Doi (MMC) EID2020-5 SDM2020-39 |
The neuromorphic system is a hardware-level biosimulation system that implements neuron and synaptic elements. It has th... [more] | EID2020-5 SDM2020-39 pp.17-20 |
| SDM | 2019-01-29 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors Shinji Migita, Hiroyuki Ota (AIST), Akira Thorium (U. Tokyo) SDM2018-82 |
Steep-subthreshold swing (steep-SS) behaviors are observable in recent ferroelectric-gate field-effect transistors (FE-F... [more] | SDM2018-82 pp.5-8 |
| SDM | 2017-10-26 10:50 |
Miyagi | Niche, Tohoku Univ. | Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame (NIMS/JST), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2017-57 |
The effect of crystallized ZrO2 seed layers, which inserted between a TiN bottom electrode and a ferroelectric HfxZr1-xO... [more] | SDM2017-57 pp.39-44 |
| SDM | 2016-06-29 10:00 |
Tokyo | Campus Innovation Center Tokyo | [Invited Lecture]
Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor Yuuichi Kamimuta, Shosuke Fujii, Riichiro Takaishi, Tsunehiro Ino, Yasushi Nakasaki, Masumi Saitoh, Masato Koyama (Toshiba) SDM2016-32 |
We have investigated the effect of top TiN deposition process and annealing temperature on physical and electrical prope... [more] | SDM2016-32 pp.1-4 |
| SDM | 2016-06-29 11:15 |
Tokyo | Campus Innovation Center Tokyo | Fabrication of ferroelectric nanowire capacitors
-- Towards high-density non-volatile ferroelectric memories -- Hironori Fujisawa, Masaru Shimizu, Seiji Nakashima (Univ. Hyogo) SDM2016-35 |
We demonstrated fabrication of ZnO/(Hf,Zr)O_2/ZnO nanowire capacitors fabricated by metalorganic chemical vapor depositi... [more] | SDM2016-35 pp.15-19 |
| ICD | 2015-04-17 13:30 |
Nagano | [Invited Lecture]
A 2.4 pJ Ferroelectric-Based Non-Volatile Flip-Flop with 10-Year Data Retention Capability Hiromitsu Kimura, Takaaki Fuchikami, Kyoji Marumoto, Yoshikazu Fujimori (ROHM), Shintaro Izumi, Hiroshi Kawaguchi, Masahiko Yoshimoto (Kobe Univ.) ICD2015-11 |
A ferroelectric-based (FE-based) non-volatile flip-flop (NVFF) is proposed for low-power LSI. Since leakage current in ... [more] |
ICD2015-11 pp.51-55 |
|
| ICD | 2010-04-22 14:20 |
Kanagawa | Shonan Institute of Tech. | [Invited Talk]
Overview of Chain FeRAM Technology and Scalable Shield-Bitline-Overdrive Technique Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima (Toshiba) ICD2010-8 |
This paper presents an overview of chain FeRAM technology, and a new scalable shield-bitline-overdrive technique. First,... [more] | ICD2010-8 pp.41-46 |
| ICD, IPSJ-ARC | 2008-05-14 11:15 |
Tokyo | Design of a Multi-Context Field-Programmable VLSI Using Ferroelectric-Based Functional Pass-Gates Noriaki Idobata, Shota Ishihara, Masanori Hariyama, Michitaka Kameyama (Tohoku Univ.) ICD2008-28 |
Multi-Context FPGAs have multiple memory bits per configuration bit forming configuration planes for fast switching betw... [more] | ICD2008-28 pp.57-62 |
|
| ICD | 2006-04-13 13:00 |
Oita | Oita University | [Special Invited Talk]
Techniques and Scaling Scenario for Chain FeRAM Daisaburo Takashima (Toshiba) |
A chain FeRAM architecture is the best solution to realize high-density, high-speed and low power nonvolatile memory. In... [more] | ICD2006-6 pp.31-36 |
| MW, ED | 2005-11-17 13:10 |
Saga | - Minoru Noda (Osaka Univ.), Yoshinobu Sasaki (Mitsubishi Electric), Daniel Popovici, Masanori Okuyama (Osaka Univ.), Makio Komaru (Mitsubishi Electric) |
We have newly designed and fabricated both BaxSr1-xTiO3 (BST) ferroelectric thin film tunable phase shifter and pseudomo... [more] | ED2005-164 MW2005-119 pp.33-37 |
|
| CAS, SIP, VLD | 2005-06-28 14:50 |
Miyagi | Tohoku University | Complementary Ferroelectric Capacitor Logic and its Application to Fully Parallel Arithmetic VLSI Shoun Matsunaga, Takahiro Hanyu (Tohoku Univ.) |
In this paper, we propose a Complementary Ferroelectric Capacitor Logic-in-Memory circuit that makes it possible easily ... [more] | CAS2005-25 VLD2005-36 SIP2005-49 pp.61-65 |
[Return to Top Page]