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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM, CPM | 2021-05-27 15:40 |
Online | Online | Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.)  ED2021-6 CPM2021-6 SDM2021-17 |
Recently, novel information processing techniques using nanoscale devices, such as neural networks and reconfigurable co... [more] | ED2021-6 CPM2021-6 SDM2021-17 pp.23-26 |
| CPM | 2021-03-03 14:00 |
Online | Online | Ferromagnetic Single-Electron Devices Comprising Co Nanoparticles Assembled by Use of On-Chip Electromagnets Kenta Fujikura, Tetsuya Urae, Kazuma Sekine, Masataka Moriya, Hiroshi Shimada (UEC), Ayumi Hirano-Iwata (TU), Fumihiko Hirose (YU), Yoshinao Mizugaki (UEC) CPM2020-70 |
In this research, cobalt nanoparticles, which are ferromagnets, were assembled in a nanogap by magnetic field alignment ... [more] | CPM2020-70 pp.55-58 |
| ED, SDM | 2018-02-28 10:25 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Numerical Simulation on Single-Electron Effects in Random Arrays of Small Tunnel Junctions Yoshinao Mizugaki, Masataka Moriya, Hiroshi Shimada, Kazuhiko Matsumoto, Makoto Moribayashi, Tomoki Yagai (UEC Tokyo), Yasuo Kimura (Tokyo Univ. Tech.), Ayumi Hirano-Iwata (Tohoku Univ.), Fumihiko Hirose (Yamagata Univ.) ED2017-105 SDM2017-105 |
We have worked on single-electron devices comprising random arrays of gold nanoparticles, which are fabricated using dis... [more] | ED2017-105 SDM2017-105 pp.7-10 |
| NLP | 2016-12-13 10:55 |
Aichi | Chukyo Univ. | Single-Electron Decoder Circuits for Communication Systems Using Photoelectric Effect and Electron Wave Frequency Discrimination Atsushi Setuie, Jinya Sato, HIsato Fujisaka, Takeshi Kamio (Hiroshima City Univ.) NLP2016-96 |
Application of quantum mechanical phenomena to front-end parts in receivers of Tera-hertz (THz) sensing and communicatio... [more] | NLP2016-96 pp.67-72 |
| SDM, ED | 2015-02-05 15:05 |
Hokkaido | Hokkaido Univ. | Highly functionality of three-terminal nanodot array for multi-input and multi-output devices Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2014-141 SDM2014-150 |
Nanodot-array single-electron devices with multi-inputs and multi-outputs achieve higher functionality that conventional... [more] | ED2014-141 SDM2014-150 pp.17-22 |
| SDM, ED | 2013-02-28 09:50 |
Hokkaido | Hokkaido Univ. | Blocking Oscillation Using Combination of Discrete and Continuous Charge/Flux Transfer in Dissipative Single-Quantum Devices Yoshinao Mizugaki (Univ. of Electro- Comm.) ED2012-139 SDM2012-168 |
The island charge of a single-electron (SE) transistor is discrete because of SE tunneling through tiny tunnel junctions... [more] | ED2012-139 SDM2012-168 pp.59-64 |
| ED, SDM | 2012-02-07 14:35 |
Hokkaido | KFM observation of individual dopant potentials and electron charging Roland Nowak, Miftahul Anwar, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ED2011-144 SDM2011-161 |
We utilize Kelvin probe force microscope (KFM) to measure surface potential of thin channel of nanoscale field effect tr... [more] | ED2011-144 SDM2011-161 pp.13-18 |
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| ED, SDM | 2012-02-07 15:15 |
Hokkaido | High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.) ED2011-145 SDM2011-162 |
Single electron transistor (SET) is a low power device. However, the high frequency operation properties have not been i... [more] | ED2011-145 SDM2011-162 pp.19-24 |
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| ED, SDM | 2010-02-22 16:30 |
Okinawa | Okinawaken-Seinen-Kaikan | Observation of enhanced MR effects in a single electron transistor with ferromagnetic lead electrodes Nobuyuki Tamura, Kento Kikuchi, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro-Comm.) ED2009-204 SDM2009-201 |
We report our experimental results on the magneto-resistance ratio ($MRR$) of single-electron transistors (SETs) wit... [more] |
ED2009-204 SDM2009-201 pp.47-52 |
| SDM, ED | 2009-06-25 09:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
Novel-Functional Single-Electron Devices Using Silicon Nanodot Array Yasuo Takahashi, Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwar, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.) ED2009-83 SDM2009-78 |
We demonstrate a highly functional Si nanodot array device that operates by means of single-electron effects. The device... [more] | ED2009-83 SDM2009-78 pp.145-148 |
| ED, SDM | 2008-01-30 14:45 |
Hokkaido | Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer Daniel Moraru, Daisuke Nagata, Kiyohito Yokoi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) ED2007-240 SDM2007-251 |
Randomly distributed dopants in the channel of silicon-on-insulator (SOI) field-effect transistors (FETs) can introduce ... [more] | ED2007-240 SDM2007-251 pp.17-22 |
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| ED, SDM | 2007-06-25 13:00 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | [Invited Talk]
Room-temperature-operating single-electron devices using silicon nanowire MOSFET Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) |
In this paper, we report the development of devices for single-electron transfer and detection at room temperature, usin... [more] | |
| ED, SDM | 2006-01-26 13:55 |
Hokkaido | Hokkaido Univ. | Periodic Coulomb oscillation in Si single-eletron transistor based on multiple islands Kensaku Ohkura (Hiroshima Univ.), Tetsuya Kitade (ROHM), Anri Nakajima (Hiroshima Univ.) |
Single-electron transistors (SETs) utilizing the Coulomb blockade effect are promising candidates for use as basic eleme... [more] | ED2005-225 SDM2005-237 pp.7-11 |
| ED, SDM | 2006-01-26 14:45 |
Hokkaido | Hokkaido Univ. | Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor Kensaku Ohkura (Hiroshima Univ.), Tetsuya Kitade (ROHM), Anri Nakajima (Hiroshima Univ.) |
Single-electron transistors (SETs) utilizing the Coulomb blockade effect are promising candidates for use as basic eleme... [more] | ED2005-227 SDM2005-239 pp.19-22 |
| ED, SDM | 2006-01-26 15:30 |
Hokkaido | Hokkaido Univ. | [Invited Talk]
Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature
-- Fabrication using SOI and measurements of its characteristics -- Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa (NTT), Yasuo Takahashi (Hokkaido Univ.) |
A single-electron-based circuit, in which electrons are transferred one-by-one with a turnstile and subsequently detecte... [more] | ED2005-228 SDM2005-240 pp.23-28 |
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