Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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CPM2008-9
Effect of doughnut-type plate on crystal properties of LiMn2O4 films prepared by RF magnetron sputtering
Takayuki Hosokawa, Kouichi Nakamura, Shunsuke Hosoe, Satoshi Sakai, Masaaki Isai (Shizuoka Univ.)
pp. 1 - 6
CPM2008-10
Preparation of LiMn2O4 films by RF magnetron sputtering
Kouichi Nakamura, Takayuki Hosokawa, Satoshi Sakai, Shunsuke Hosoe, Masaaki Isai (Shizuoka Univ.)
pp. 7 - 10
CPM2008-11
Evaluation of step-annealed SrS:Cu films for blue EL elements
Norifumi Yamada, Kotochika Itakura, Yuji Kurachi, Masaaki Isai (Shizuoka University)
pp. 11 - 14
CPM2008-12
Preparetion and Evaluation of SrS:Cu films for blue EL elements
Yuji Kurachi, Kotochika Itakura, Norifumi Yamada, Masaaki Isai (Shizuoka University)
pp. 15 - 18
CPM2008-13
Preparation of β-Ga2O3 films by RF magnetron sputtering method
Takashi Horiuchi, Masaaki Isai (Shizuoka Univ.)
pp. 19 - 22
CPM2008-14
Preparation of TiO2 films by RF magnetron sputtering method
Tatsuya Endo, Yuichi Mizuchi, Masaaki Isai (Shizuoka Univ.)
pp. 23 - 28
CPM2008-15
Investigation of deep levels in GaPN by photoconductivity transient measurement
Keita Izumi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.)
pp. 29 - 34
CPM2008-16
An ultrasonic method for synthesis of ZnO nanostructure on glass substrates
Kasimayan Uma, Tetsuo Soga, Takashi Jimbo (Nagoya Inst. of Tech.)
pp. 35 - 40
CPM2008-17
Synthesis of single walled carbon nanotubes using Ultrasonic nebulizer
Ishwor Khatri, Tetsuo Soga, Takashi Jimbo (Nagoya Inst. of Tech.)
pp. 41 - 46
CPM2008-18
Growth of cupric oxide nanostructure by thermal oxidation of copper
Jien-Bo Liang, Kasimayan Uma, Tetsuo Soga, Takashi Jimbo (Nagoya Inst. of Tech.)
pp. 47 - 50
CPM2008-19
Al/Ti/Al Ohmic Contacts for AlGaN/GaN Heterostructures
Masanobu Hiroki, Kazumi Nishimura, Noriyuki Watanabe, Yasuhiro Oda, Takashi Kobayashi (NTT PH Lab.)
pp. 51 - 56
CPM2008-20
Dislocation in AlGaN grown on grooved AlN
Toshiaki Mori, Toshiaki Asai, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.)
pp. 57 - 60
CPM2008-21
On-resistance and Breakdown Voltage of Enhancement-Mode AlGaN/GaN Junction HFET Using p-GaN Gate Contact
Ryohei Nega, Katsutoshi Mizuno, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.)
pp. 61 - 66
CPM2008-22
Characterization of Low-Pressure MOCVD-grown AlxGa1-xN on Si substrates
Kouichi Hiromori, Hiroyasu Ishikawa, Fumiyuki Tokura, Keita Shimanaka, Naoto Mori, Tomohiko Morimoto (Nagoya Inst. of Tech.)
pp. 67 - 70
CPM2008-23
Lateral growth of GaAs(001)microchannel epitaxy grown by temperature difference method
Yasumasa Tejima, Kenshiro Suzuki, Shigeya Naritsuka, Takahiro Maruyama (Meijo Univ.)
pp. 71 - 74
CPM2008-24
Effect of strain relaxation process on polarization in strained superlattice spin-polarized photocathode
Yuya Maeda, Jin Xiuguang, Masatoshi Tanioku, Shingo Fuchi, Toru Ujihara, Yoshikazu Takeda, Naoto Yamamoto, Atsushi Mano, Yasuhide Nakagawa, Masahiro Yamamoto, Shoji Okumi, Nakanishi Tsutomu (Nagoya Univ.), Takashi Saka (Daido institute of Technology), Horinaka Hiromiti (Osaka Prefecture Univ.), Toshihiro Kato (Daido Steel Co. Ltd)
pp. 75 - 80
CPM2008-25
Iodine doping of CdTe Layers on Si Substrates Grown by MOVPE ( I )
Akinobu Watanabe, Yasuhiro Kai, Wataru Yamada, Hatasu Ichihashi, Tomohiro Yoneyama, Daisuke Kato, Kazuya Matsumoto, Yasunori Agata, Madan Niraula, Kazuhito Yasuda (Nagoya Inst. Tech.)
pp. 81 - 84
CPM2008-26
Iodine doping of CdTe Layers Grown on Si Substrates by MOVPE(II)
Hatasu Ichihashi, Wataru Yamada, Yasuhiro Kai, Akinobu Watanabe, Tomoya Nakanishi, Hiroki Oka, Hajime Nakashima, Yasunori Agata, Madan Niraula, Kazuhito Yasuda (Nagoya Inst. Tech.)
pp. 85 - 88
CPM2008-27
Observation Method of Variation in Barrier Height in 4H-SiC Schottky Diodes Using the Electrochemical Deposition
Hidenori Ono, Kazuya Ogawa, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.)
pp. 89 - 94
CPM2008-28
Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method
Yoshinori Matsushita, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA)
pp. 95 - 100
CPM2008-29
Characterization of deep levels in undoped 6H-SiC by Current Deep-Level Transient Spectroscopy method
Kosuke Kito, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech)
pp. 101 - 106
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.