Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2008-42
[Tutorial Lecture]
Current Status and Prospects of High Mobility Channel Technologies for High performance CMOS
Shinichi Takagi (Univ. of Tokyo/MIRAI-AIST)
pp. 1 - 6
SDM2008-43
[Tutorial Lecture]
Development History of Compound Semiconductor Electron Devices
Yasuo Ohno (Tokushima Univ.)
pp. 7 - 12
SDM2008-44
HoleSubband Dispersion in Si inversion Layers
Sakura N. Takeda, Makoto Morita, Ｔａkuya Ohsugi, Yohei Tanigawa, Hiroshi Daimon (NAIST)
pp. 13 - 16
SDM2008-45
Accurate Evaluation of MOS Inversion Layer Mobility
Akira Toriumi, Koji Kita (Univ. Tokyo)
pp. 17 - 22
SDM2008-46
Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs
Masumi Saitoh, Shigeki Kobayashi, Ken Uchida (Toshiba)
pp. 23 - 27
SDM2008-47
Mobility Enhancement in Ultra Thin Body SOI MOSFETs by Quantum Confinement Effects
Toshiro Hiramoto, Ken Shimizu, Gen Tsutsui (Univ. of Tokyo)
pp. 29 - 34
SDM2008-48
Transconductance enhancement of strained-Si nanowire FETs
Aya Seike, Tomoyuki Tange, Itsutaku Sano, Yuuki Sugiura, Ikushin Tsuchida, Hiromichi Ohta, Takanobu Watanabe (Waseda Univ.), Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Iwao Ohdomari (Waseda Univ.)
pp. 35 - 39
SDM2008-49
Gate Dielectrics Interface Control for III-V MISFET
Tetsuji Yasuda, Noriyuki Miyata (AIST), Akihiro Ohtake (NIMS)
pp. 41 - 46
SDM2008-50
Backside X-ray Photoelectron Spectroscopy of Ru/HfSiON Gate Stack
-- Origin of Change in Effective Work Function of Ru --
Taiki Mori, Akio Ohta, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete)
pp. 47 - 52
SDM2008-51
The role of the high-k/SiO2 interface in the control of the threshold voltage for high-k MOS devices
Kunihiko Iwamoto, Yuuichi Kamimuta (MIRAI-ASET), Yu Nunoshige (Shibaura Institute of Technology), Akito Hirano, Arito Ogawa, Yukimune Watanabe (MIRAI-ASET), Shinji Migita, Wataru Mizubayashi, Yukinori Morita (MIRAI-ASRC, AIST), Masashi Takahashi (MIRAI-ASET), Hiroyuki Ota (MIRAI-ASRC, AIST), Toshihide Nabatame (MIRAI-ASET), Akira Toriumi (The University of Tokyo)
pp. 53 - 58
SDM2008-52
XPS Study of TiAlN/HfSiON Gate Stack
-- Reduction of Effective Work Function Change Induced by Al Diffusion --
Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete)
pp. 59 - 64
SDM2008-53
XPS real-time monitoring on the development of Si suboxides during formation of thermal oxide on Si(110) surface
Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Konno, Mitsutaka Matsumoto, Atsushi Kato, Eiji Saito, Maki Suemitsu (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA)
pp. 65 - 70
SDM2008-54
Fabrication of Pr oxide films by MOCVD and evaluation of its electrical properties
Hiroki Kondo, Shinya Sakurai (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.)
pp. 71 - 75
SDM2008-55
Theoretical Studies on the Charge Trap Mechanisms of MONOS Memories
Kenji Shiraishi, Kenji Kobayashi (Univ of Tsukuba), Takeshi Ishida, Yutaka Okuyama, Renichi Yamada (Central Research Labs., Hitachi)
pp. 77 - 82
SDM2008-56
Characterization of Metal Nanodots Nonvolatile Memory
Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi (Tohoku Univ.)
pp. 83 - 88
SDM2008-57
Bio-nano dot floating gate memory with High-k films
Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC)
pp. 89 - 92
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.