Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
[TOP] | [2006] | [2007] | [2008] | [2009] | [2010] | [2011] | [2012] | [Japanese] / [English]
ED2008-22
Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure
Nariaki Tanaka (JAIST), Yasunobu Sumida, Hiroji Kawai (POWDEC), Toshi-kazu Suzuki (JAIST)
pp. 1 - 4
ED2008-23
I-V and C-V characteristics of p-GaN schottky contacts
-- Carrier concentration and metal work function dependences --
Yoshihiro Fukushima, Keita Ogisu, Masaaki Kuzuhara, Kenji Shiojima (Fukui Univ.)
pp. 5 - 10
ED2008-24
Deep levels in AlGaN and operation stability of AlGaN/GaN HEMT
Masafumi Tajima, Junji Kotani, Katsuya Sugawara, Tamotsu Hashizume (Hokkaido Univ.)
pp. 11 - 16
ED2008-25
Characterization of N-doped AlSiO film for wide bandgap semiconductors
Naoyoshi Komatsu, Hirotaka Tanaka, Hidemitsu Aoki, Keiko Matsunouchi, Chiharu Kimura (Osaka Univ.), Yukihiko Okumura (Maizuru National Col. of Tech.), Takashi Sugino (Osaka Univ.)
pp. 17 - 22
ED2008-26
Reliability evaluation of MOCVD-grown InP/InGaAs HBTs
Keita Ogisu, Yoshihiro Fukushima, Kenji Shiojima (Fukui Univ.), Gkou Araki, Hideo Yokohama (NTT-AT)
pp. 23 - 28
ED2008-27
Wet Cleaning Processing of VLSI Devices by Functional Waters
Masako Kodera, Yoshitaka Matsui, Naoto Miyashita (Toshiba)
pp. 29 - 34
ED2008-28
Particle Performance Improvement of Single-Wafer Wet Cleaning for Next Generation
Ken-ichi Sano, Katsuhiko Miya, Akira Izumi, Jim Snow, Atsuro Eitoku (Dainippon Screen MFG.)
pp. 35 - 40
ED2008-29
Study on Deterioration of Resist Removal Efficiency in SPM, and Experimental Proof of Ashingless Resist Removal Using Electrolyzed Sulfuric Acid Solution
Tatsuo Nagai, Haruyoshi Yamakawa, Minoru Uchida, Toru Otsu, Norihito Ikemiya (Kurita)
pp. 41 - 46
ED2008-30
Drying behavior of remaining liquid film and droplet in Marangoni drying
Yasuharu Miyamoto (Grad. school of Shibaura inst. of Tech.), Junji Kamoshida, Jun Yamada (Shibaura Inst. of Tech.)
pp. 47 - 50
ED2008-31
300mm Wafer Stain Formation by Spin Etching
Satomi Mashimoto, Masaharu Watanabe, Keisuke Sato (SEZ JAPAN)
pp. 51 - 54
ED2008-32
InP HEMT device technology for ultra-high-speed MMIC
Naoki Hara, Tsuyoshi Takahashi, Kozo Makiyama (Fujitsu), Toshihiro Ohki (Fujitsu Lab)
pp. 55 - 60
ED2008-33
Parameter Estimation of Nonliner Equivalent Circuit in Compound Ssemiconductor Triple-Barrier Resonant Tunneling Diodes
Yuichi Iki, Masaaki Shinada, Mamoru Naoi, Naoya Asaoka, Michihiko Suhara, Tsugunori Okumura (TMU)
pp. 61 - 66
ED2008-34
Fabrication of Resonant Tunneling Devic Blocks for Fluidic Self-Assembly
Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals)
pp. 67 - 72
ED2008-35
Heterogeneous integration of InAs thin films by epitaxial lift-off and van der Waals bonding
Hayato Takita, Masahiro Kudo, Nariaki Tanaka, Toshi-kazu Suzuki (JAIST)
pp. 73 - 76
ED2008-36
MBE growth of high In-content InGaAs/InAlAs heterojunction and its spin-orbit interaction in the 2DEG layer
Hyonkwan Choi, Shunsuke Nitta, Syoji Yamada (CNMT JAIST)
pp. 77 - 80
ED2008-37
Heteroepitaxial growth of InSb films via Si(111)-√7×√3-In surface reconstruction
Masayuki Mori, Mitsufumi Saito, Kyohei Nagashima, Koji Ueda, Tatsuo Yoshida, Koichi Maezawa (Univ. Toyama)
pp. 81 - 84
ED2008-38
Effects of In and Sb mono-layers to form rotated InSb films on a Si(111) substrate
Mitsufumi Saito, Masayuki Mori, Koji Ueda, Koichi Maezawa (Univ. Toyama)
pp. 85 - 90
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.