Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2009-151
Improvement of the optical property of ZnS-based inorganic EL phosphor by Microwave Sintering
Yusuke Kobayashi (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Masami Susaki (Osaka Pref. College of Technology), Masahiro Horita (NAIST), Yukiharu Uraoka (NAIST/CREST)
pp. 1 - 4
SDM2009-152
Reduction of interface state density in 4H-SiC MOS interface by incorporation of phosphorus atoms
Dai Okamoto, Hiroshi Yano, Kenji Hirata, Tomoaki Hatayama, Takashi Fuyuki (NAIST)
pp. 5 - 10
SDM2009-153
Changed of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiattion
Takunori Nojiri, Hideki Yanagisawa, Yosiko Myojin, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA)
pp. 11 - 16
SDM2009-154
Research on Radiation Resistance in SiC Epilayer by 200 keV Electron Irradiation.
-- dopant-density dependence --
Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA)
pp. 17 - 22
SDM2009-155
Reduction in Acceptor Density due to Displacement of Carbon atom in Al-doped 4H-SiC by Electron Irradiation
Kozo Nishino, Hideki Yanagisawa, Takunori Nojiri, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA)
pp. 23 - 28
SDM2009-156
Electrochemical measurement by potenitiostat using thin-film transistor
Kosuke Bundo, Yosiki Imuro, Koushi Setsu (Ryukoku Univ), Yuki Sagawa (NAIST), Mutsumi Kimura (Ryukoku Univ)
pp. 29 - 33
SDM2009-157
Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs
Yoshinari Kamakura (Osaka Univ.), Takashi Himukashi (Osaka Univ./Kansai Univ.), Hiroshi Tsuji, Kenji Taniguchi (Osaka Univ.)
pp. 35 - 38
SDM2009-158
Si substrate processing by ethanol cluster ion beam technique
Hiroshi Mukai, Hiromichi Ryuto, Mitsuaki Takeuchi, Gikan H. Takaoka (Kyoto Univ.)
pp. 39 - 41
SDM2009-159
[Invited Talk]
Temperature dependence of threshold voltage of High-k/Metal Gate MOSFETs
Yukio Nishida (Renesas/Hiroshima Univ.), Katsumi Eikyu, Akihiro Shimizu, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue (Renesas), Kentaro Shibahara (Hiroshima Univ./Renesas)
pp. 43 - 47
SDM2009-160
Simplification of Structures of Si X-ray Detectors (Silicon Drift Detector)
-- Evaluation by simulation --
Seigo Kitanoya, Takayuki Miyake, Yukihiro Taniguchi, Hideharu Matsuura (Osaka Electro-Comm Univ.)
pp. 49 - 54
SDM2009-161
Investigation of LTPS TFT flash memory using crystallized 3-dimentonal substrate by green laser irradiation
Kazunori Ichikawa, Masahiro Matsue, Hiroshi Akamatsu (Kobe City Coll. of Tech), Yukiharu Uraoka (NAIST)
pp. 55 - 58
SDM2009-162
Application of thin-film devices to artificial retina
Yuta Miura, Takeshi Ogura, Shiro Ohno (Ryukoku Univ.), Tomohisa Hachida, Yoshitaka Nishizaki, Takehiko Yamashita (NAIST), Takehiro Shima, Mutsumi Kimura (Ryukoku Univ.)
pp. 59 - 62
SDM2009-163
Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate
Akito Hara, Tsutomu Sato (Tohoku Gakuin Univ.)
pp. 63 - 65
SDM2009-164
Neural Network of Device Level using Poly-Si TFT
Daiki Mishima, Jin Taniguchi, Tomohiro Kasakawa (Ryukoku Univ.), Hiroki Tabata, Ryo Onodera (NAIST), Hiroki Kojima, Mutsumi Kimura (Ryukoku Univ.)
pp. 67 - 71
SDM2009-165
Crystallization of a-Si Film via Quasi-Nuclei Formed by Laser Plasma Soft X-Ray Irradiation
Sinya Isoda, Naoto Matsuo, Sho Amano, Akira Heya, Shuji Miyamoto, Takayasu Mochizuki (Univ. of Hyogo.)
pp. 73 - 77
SDM2009-166
Formation of High Quality SiO2 and SiO2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing
Yasuo Hiroshige, Seiichiro Higashi, Yusuke Miyazaki, Kazuya Matsumoto, Seiichi Miyazaki (Hiroshima Univ.)
pp. 79 - 82
SDM2009-167
Stability Improvement of Printer Ink
Tomohiro Oba, Sinya Maeta, Masaki Yamaguchi (Shibaura Ins. of Tech.)
pp. 83 - 88
SDM2009-168
Chemical composition dependence of electrical characteristics of NiO thin films for ReRAM
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.)
pp. 89 - 92
SDM2009-169
Mechanism elucidation of ReRAM by application of new analytical method
Tatsuya Makino, Kentaro Kinoshita, Kazufumi Doashi, Takatoshi Yoda, Satoru Kishida (Tottori Univ.)
pp. 93 - 96
SDM2009-170
Characterization of defects in NiO thin films for ReRAM
Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.)
pp. 97 - 100
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.