Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2010-185
Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoritical Calculations
Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
pp. 1 - 6
SDM2010-186
X-Ray Detectors (Silicon Drift Detectors) using Higher-Resistivity Si
-- Simulation Results --
Seigo Kitanoya, Seiji Nishikawa, Hideharu Matsuura (Osaka Electro-Communication Univ.)
pp. 7 - 12
SDM2010-187
Ion channeling at Heusler alloy Fe3-xMnxSi(111)/Ge(111) heteroepitaxial interfaces
Takahito Nakajima, Bui Matsukura (Kyoto Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.)
pp. 13 - 17
SDM2010-188
Improvement of Luminescence Property of ZnS Inorganic EL by Atomization Treatment of Phosphor
Shogo Horiguchi, Takuya Kontani, Masahiro Horita (NAIST), Nobuyoshi Taguchi (ITI), Yukiharu Uraoka (NAIST/CREST)
pp. 19 - 23
SDM2010-189
Laser Doping at Room Temperature in Multi-Crystalline Silicon Solar Cell Process
Mitsuhiro Hasegawa, Kenji Hirata, Tamaki Takayama, Tomohiro Funatani, Takashi Fuyuki (NAIST)
pp. 25 - 28
SDM2010-190
Optimization of Laser Doping by Controlled Dopant Precursor Layer in Silicon Solar Cell Process
Tomohiro Funatani, Kenji Hirata, Tamaki Takayama, Mitsuhiro Hasegawa, Takashi Fuyuki (NAIST)
pp. 29 - 32
SDM2010-191
Effect of H2-N2 Plasma Exposure on Nanostructured Silicon
Akitsugu Watanabe, Kenichi Suda, Hideki Nakada, Mitsuya Motohashi (Tokyo Denki Univ.)
pp. 33 - 37
SDM2010-192
[Invited Talk]
Estimation of Physical Properties and Control of Memory Performance in ReRAM
Kentaro Kinoshita, Takatoshi Yoda, Hayato Tanaka, Akihiro Hanada, Satoru Kishida (Tottori Univ.)
pp. 39 - 44
SDM2010-193
Effects of thermal treatment in vacuum on the electrical characteristics of Pt/NiO/Pt stack structures for ReRAM
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.)
pp. 45 - 49
SDM2010-194
Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
Seiji Nishikawa, Seigo Kitanoya, Hideharu Matsuura (Osaka Electro-Communication Univ.)
pp. 51 - 56
SDM2010-195
Change of majority carrier density in 4H-SiC epilayer by 200keV electron irradiation
Takunori Nojiri, Kozo Nishino, Hideki Yanagisawa, Hideharu Matsuura (Osaka Electro-Communication Univ.), Shinobu Onoda, Takeshi Ohshima (JAEA)
pp. 57 - 62
SDM2010-196
Properties of the oxidized layers on SiC in supercritical water
Tomohisa Satoh (Osaka Univ.), Takashi Futatsuki, Taro Oe (Organo), Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki (Osaka Univ.)
pp. 63 - 67
SDM2010-197
Irradiation Effects of Silicon Surface by Polyatomic Ion Beams
Mitsuaki Takeuchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.)
pp. 69 - 72
SDM2010-198
Photoluminescence and deep level transient spectroscopy study on recrystallization of ultra-shallow junction
Masashi Okutani, Shuhei Takashima, Masahiro Yoshimoto (KIT), Woo Sik Yoo (WaferMasters, Inc.)
pp. 73 - 78
SDM2010-199
Lateral Large-Grained Low-Temperature Poly-Si1-xGex TFTs on Glass Substrate
Yasunori Okabe, Kenji Kondo (Tohoku Gakuin Univ.), Kenta Hirose, Junki Suzuki, Kuninori Kitahara (Shimane Univ.), Akito Hara (Tohoku Gakuin Univ.)
pp. 79 - 82
SDM2010-200
Evaluation of two layers simultaneous crystallized LTPS-TFT memory by the laser irradiation from the back.
Masahiro Matsue, Kazunori Ichikawa, Hiroshi Akamatsu (KCCT), Koji Yamasaki, Masahiro Horita, Yukiharu Uraoka (NAIST)
pp. 83 - 86
SDM2010-201
Study for DNA-Field Effect Transistor with Si gate
Shogo Takagi, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ of Hyogo), Kenji Sakamoto, Shin Yokoyama (Hiroshima Univ)
pp. 87 - 91
SDM2010-202
Neural Network at Device Level using Poly-Si TFT
-- Learning of multiple times and learning of AND, OR, EXOR --
Tomoaki Miyatani, Yusuke Fujita (Ryukoku Univ), Daiki Mishima (NAIST), Jin Taniguchi, Tomohiro Kasakawa, Mutsumi Kimura (Ryukoku Univ)
pp. 93 - 97
SDM2010-203
Effect of high pressure vapor anneal treatment on the a-In2Ga2Zn1O7 TFTs characteristics
Tomoki Maruyama, Mami Fujii (NAIST), Masashi Kasami, Koki Yano (Idemitsu Kosan), Masahiro Horita, Yasuaki Ishikawa (NAIST), Yukiharu Uraoka (NAIST/JST-CREST)
pp. 99 - 102
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.