IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 112, Number 356

Lasers and Quantum Electronics

Workshop Date : 2012-12-13 / Issue Date : 2012-12-06

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Table of contents

LQE2012-121
Gain characterization of 19-stacked InGaAs/GaAs quantum dot laser diode fabricated by ultrahigh rate MBE growth technique
Fumihiko Tanoue, Hiroharu Sugawara (Tokyo Metropolitan Univ.), Kouichi Akahane, Naokatsu Yamamoto (NICT)
pp. 1 - 4

LQE2012-122
Surface Emitting Laser using Polymer Optical Circuit
Takeru Amano, Fumio Sasaki, Shigeya Ukita, Motohiro Suzuki, Masahiro Aoyagi, Kazuhiro Komori (AIST)
pp. 5 - 8

LQE2012-123
Low threshold operation of GaInAsP/InP lateral current injection type membrane laser
Takahiko Shindo, Mitsuaki Futami, Kyohei Doi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech)
pp. 9 - 14

LQE2012-124
Ultra-high-speed direct modulation of AlGaInAs semi-insulating buried-heterostructure distributed-reflector lasers
Takasi Simoyama, Manabu Matsuda, Shigekazu Okumura, Ayahito Uetake, Mitsuru Ekawa, Tsuyoshi Yamamoto (Fujitsu Labs.)
pp. 15 - 18

LQE2012-125
1550nm/1310nm dual wavelength high power LD
Shintaro Morimoto, Hiroshi Mori, Atsushi Yamada, Yasuaki Nagashima, Motoaki Fujita, Shinichi Onuki, Hiroaki Yoshidaya, Kazuaki Mise (Anritsu Devices)
pp. 19 - 22

LQE2012-126
Asymmetric Ridge-type Semiconductor Laser with a Selectively Formed Single-Sided Antiguiding Cladding Layer
Masahiro Higaki, Takahiro Numai (Ritsumeikan Univ.)
pp. 23 - 26

LQE2012-127
[Encouragement Talk] Photonic-crystal lasers for creation of distinctive focus
Kyoko Kitamura, Masaya Nishimoto, Kyosuke Sakai, Susumu Noda (Kyoto Univ.)
pp. 27 - 30

LQE2012-128
[Encouragement Talk] Advances in Quantum Dot Lasers on Silicon Substrates by Wafer Bonding
Katsuaki Tanabe, Yasuhiko Arakawa (Univ. Tokyo)
pp. 31 - 33

LQE2012-129
III-V/Si Direct Bonding by N2 Plasma Surface Activation and Its Application to Hybrid Laser
Yusuke Hayashi, Ryo Osabe, Keita Fukuda, JoonHyun Kang, Yuki Atsumi, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Inst. Tech.)
pp. 35 - 40

LQE2012-130
Scattering phenomenon via Non-Lasing band in 2D Photonic Crystal Laser
Kazuyoshi Hirose, Yoshitaka Kurosaka, Akiyoshi Watanabe, Takahiro Sugiyama (HPK), Yong Liang, Susumu Noda (Kyoto Univ.)
pp. 41 - 46

LQE2012-131
Hollow waveguide DBR lasers with 2D optical confinement structure toward athermal and narrow linewidth operation
Hideaki Yamakawa, Tomohiro Akutsu, Takahiro Sakaguchi, Fumio Koyama (TITECH)
pp. 47 - 50

LQE2012-132
Full-band Injection-Locking Properties of a Monolitically Integrated Tunable Laser with Single Stripe Structure
Aaron Albores-Mejia, Haruhiko Kuwatsuka (AIST), Toshimitsu Kaneko, Katsumi Uesaka, Hajime Shoji (SEI), Hiroshi Ishikawa (AIST)
pp. 51 - 54

LQE2012-133
1550nm AlGaInAs/InP Widely Tunable BH Laser based on Arrayed DFB
Norihiro Iwai, Masaki Wakaba, Masako Kobayakawa, Kazuaki Kiyota, Tatsuro Kurobe, Go Kobayashi, Tatsuya Kimoto, Toshikazu Mukaihara, Noriyuki Yokouchi, Akihiko Kasukawa (Furukawa Electric)
pp. 55 - 58

LQE2012-134
10.7Gbps-80km Fiber Transmission of Full C-band Tunable TOSA with LGLC Tunable Laser
Kazuhiko Naoe, Atsushi Nakamura, Noriko Sasada, Akira Nakanishi, Yasushi Sakuma, Katsuya Motoda, Takeshi Yamashita, Tomohiko Yahagi (Oclaro), Takanori Suzuki, Hideo Arimoto, Shigehisa Tanaka (Hitachi CRL)
pp. 59 - 63

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan