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Technical Committee on VLSI Design Technologies (VLD) (Searched in: 2007)
Search Results: Keywords 'from:2007-10-30 to:2007-10-30'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, VLD | 2007-10-30 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simulation on the electric conduction of semiconductor with arrayed dopant Tomohide Terunuma, Takanobu Watanabe (Waseda Univ.), Takahiro Shinada (ASMeW), Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.), Iwao Ohdomari (Waseda Univ.)  VLD2007-50 SDM2007-194 |
[more] | VLD2007-50 SDM2007-194 pp.1-4 |
| SDM, VLD | 2007-10-30 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Comparative Study on Drive Current of non-Si n-Channel MOSFETs based on Quantum-Corrected Monte Calro Simulation Takashi Mori, Yuusuke Azuma, Hideaki Tsuchiya (Kobe Univ.) VLD2007-51 SDM2007-195 |
A variety of new channel materials have been intensively studied to achieve a continuous enhancement in drive current of... [more] | VLD2007-51 SDM2007-195 pp.5-10 |
| SDM, VLD | 2007-10-30 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Coarse-grain quantum transport simulation of ultra-small MOSFETs Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) VLD2007-52 SDM2007-196 |
[more] | VLD2007-52 SDM2007-196 pp.11-14 |
| SDM, VLD | 2007-10-30 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Crystalline Orientation effects on device characteristics in ultra-small multi-gate devices Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) VLD2007-53 SDM2007-197 |
Atomistic hole transport simulation based on a nonequilibrium Green's function method and tight-binding approximation ha... [more] | VLD2007-53 SDM2007-197 pp.15-18 |
| SDM, VLD | 2007-10-30 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Simulation technology for power devices Ichiro Omura (Toshiba) VLD2007-54 SDM2007-198 |
[more] | VLD2007-54 SDM2007-198 pp.19-22 |
| SDM, VLD | 2007-10-30 13:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Electro-Thermal Compact Model for Reset Operation of Phase Change Memories Atsushi Sakai, Kenichiro Sonoda, Masahiro Moniwa, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas Technology Corp.) VLD2007-55 SDM2007-199 |
A three-dimensional (3D) electro-thermal compact model for the reset operation of a phase change memory (PCM) cell is pr... [more] | VLD2007-55 SDM2007-199 pp.23-26 |
| SDM, VLD | 2007-10-30 14:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Study of Parasitic Resistance Behavior and Its Extraction Method on Deeply Scaled MOSFETs Hideji Tsujii, Akira Hokazono, Makoto Fujiwara, Shigeru Kawanaka, Atsushi Azuma, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) VLD2007-56 SDM2007-200 |
[more] | VLD2007-56 SDM2007-200 pp.27-32 |
| SDM, VLD | 2007-10-30 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Eiji Tsukuda, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas Technology Corp.) VLD2007-57 SDM2007-201 |
Numerical study in conjunction with comprehensive bending experiments has demonstrated that \orientation{100}-Si has th... [more] |
VLD2007-57 SDM2007-201 pp.33-36 |
| SDM, VLD | 2007-10-30 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of strain-dependent hole transport characteristics in bulk Ge-pMOSFETs Hiroshi Takeda (NEC), Takeo Ikezawa, Michihito Kawada (NIS), Masami Hane (NEC) VLD2007-58 SDM2007-202 |
Self-consistent full-band Monte Carlo (with multi-subbands) device simulations were performed to clarify the mechanism o... [more] | VLD2007-58 SDM2007-202 pp.37-41 |
| SDM, VLD | 2007-10-30 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Validation of the Effect of Full Stress Tensor in HoleTransport in Strained 65nm-node pMOSFETs Eiji Tsukuda (Renesas), Yoshinari Kamakura (Osaka Univ.), Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas), Kenji Taniguchi (Osaka Univ.) VLD2007-59 SDM2007-203 |
We have developed a system consisting of a full-3D process simulator for stress calculation and k·pband calculation... [more] | VLD2007-59 SDM2007-203 pp.43-46 |
| SDM, VLD | 2007-10-31 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | An analysis of retention time of a DORGA with a constant irradiation period Daisaku Seto, Minoru Watanabe (Shizuoka Univ.) VLD2007-60 SDM2007-204 |
[more] | VLD2007-60 SDM2007-204 pp.1-6 |
| SDM, VLD | 2007-10-31 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Fast dynamic optical reconfigurations of multi-context ORGAs Mao Nakajima, Minoru Watanabe (Shizuoka Univ.) VLD2007-61 SDM2007-205 |
[more] | VLD2007-61 SDM2007-205 pp.7-11 |
| SDM, VLD | 2007-10-31 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Fast optical configurations using context superimposition Naoki Yamaguchi, Minoru Watanabe (Shizuoka Univ.) VLD2007-62 SDM2007-206 |
[more] | VLD2007-62 SDM2007-206 pp.13-16 |
| SDM, VLD | 2007-10-31 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Study of litho weak points detecting method using TCC's eigen vector Satoshi Yoshikawa (FUJITSU VLSI), Hiroki Futatuya, Tatsuo Chijimatsu, Satoru Asai (FUJITSU) VLD2007-63 SDM2007-207 |
In this paper, we examined the method for detecting litho weak points using kernel derived from eigen vectors of Transmi... [more] | VLD2007-63 SDM2007-207 pp.17-20 |
| SDM, VLD | 2007-10-31 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
TBD Masanori Hashimoto (Osaka Univ.) VLD2007-64 SDM2007-208 |
[more] | VLD2007-64 SDM2007-208 pp.21-24 |
| SDM, VLD | 2007-10-31 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of Inverter and SRAM circuits characteristics fluctuation Ryo Tanabe, Yoshio Ashizawa, Hideki Oka (Fujitsu Labs.) VLD2007-65 SDM2007-209 |
[more] | VLD2007-65 SDM2007-209 pp.25-29 |
| SDM, VLD | 2007-10-31 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | The Analysis of MOSFET Characteristic Fluctuation Caused by Layout Variation Kunio Anzai, Hitoshi Tsuno, Masao Matsumura, Satoe Minami, Yohei Hiura, Akira Takeo, Fu Wingsze, Yuzo Fukuzaki, Michihiro Kanno, Naoki Nagashima, Hisahiro Ansai (Sony) VLD2007-66 SDM2007-210 |
[more] | VLD2007-66 SDM2007-210 pp.31-34 |
| SDM, VLD | 2007-10-31 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Scaled CMOS Modeling on Analog Small Signal parameters Takeshi Kida, Shin-ichi Ohkawa, Hiroo Masuda (Renesas) VLD2007-67 SDM2007-211 |
In sub-100-nm device, mismatch characteristics of threshold voltage and drain current have been degraded. This phenomeno... [more] | VLD2007-67 SDM2007-211 pp.35-39 |
| SDM, VLD | 2007-10-31 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Modeling of Floating-Body Effect in SOI-MOSFET with Complete Surface-Potential Description Takahiro Murakami, Makoto Ando, Norio Sadachika (Hiroshima Univ.), Takaki Yoshida (NIS), Mitiko Miura-Mattausch (Hiroshima Univ.) VLD2007-68 SDM2007-212 |
[more] | VLD2007-68 SDM2007-212 pp.41-45 |
| SDM, VLD | 2007-10-31 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Technical Trends of Mismatch Modeling on Analog CMOS Circuit Hiroo Masuda, Takeshi Kida, Shin-ichi Ohkawa (Renesas) VLD2007-69 SDM2007-213 |
In sub-100-nm device, mismatch characteristics of threshold voltage and drain current have been degraded. This phenomeno... [more] | VLD2007-69 SDM2007-213 pp.47-54 |
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