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Technical Committee on Component Parts and Materials (CPM) (Searched in: 2012)
Search Results: Keywords 'from:2012-10-26 to:2012-10-26'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2012-10-26 13:00 |
Niigata | Deposition characteristics of ZnO thin films using high-energy H2O genarated by a catalytic reaction Kanji Yasui, Hitoshi Miura, Masami Tahara, Souichi Satomoto (Nagaoka Univ. Technol.) |
[more] | ||
| CPM | 2012-10-26 13:25 |
Niigata | Electronic properties of ZnO thin films grown on a-plane sapphire substrates using high-energy H2O generated by a catalytic reaction
-- Analysis using a two layer model -- Eichi Nagatomi, Naoya Yamaguchi, Tomohiko Takeuchi, Souichi Satomoto, Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.)  CPM2012-93 |
Electrical properties of ZnO thin films, which were grown through a reaction between dimethylzinc and high-energy H_2O p... [more] | CPM2012-93 pp.1-5 |
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| CPM | 2012-10-26 13:50 |
Niigata | Effect of a low-temperature buffer layer on the properties of ZnO films grown on glass substrates using catalytically generated high-energy H2O Takahiro Oyanagi, Kazuki Takezawa, Takahiro Kato (Nagaoka Univ. Technol), Hironori Katagiri, Kazuo Jimbo (NNCT), Kanji Yasui (Nagaoka Univ. Technol) CPM2012-94 |
ZnO thin films were grown through a reaction between dimethylzinc and high-energy H_{2}O produced by a Pt-catalyzed H_{2... [more] | CPM2012-94 pp.7-11 |
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| CPM | 2012-10-26 14:15 |
Niigata | Examination of Resistivity of AZO Thin Films Deposited by Sputtering Method Katsuhito Nagoshi, Yusuke Tomiguchi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.) CPM2012-95 |
We examined the effects of the substrate temperature and post-annealing in vacuum less than 2.0×10-6 Torr of AZO thin fi... [more] | CPM2012-95 pp.13-16 |
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| CPM | 2012-10-26 14:50 |
Niigata | Cu2ZnSnS4 Thin Film Solar Cells Prepared by Non-Vacuum Processing
-- Improvement of Conversion Efficiency by Investigation of Window Layer Deposition Process -- Kunihiko Tanaka, Takumi Aizawa, Hisao Uchiki (NUT) CPM2012-96 |
[more] | CPM2012-96 pp.17-21 |
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| CPM | 2012-10-26 15:15 |
Niigata | Fabrication of three-dimensional-structure solar cell with Cu2ZnSnS4 Masato Kurokawa, Kunihiko Tanaka, Minoru Kato, Tomotake Naganuma, Yoshiki Nagahashi, Hisao Uchiki (Nagaoka Univ. of Tec.) CPM2012-97 |
[more] | CPM2012-97 pp.23-28 |
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| CPM | 2012-10-26 15:40 |
Niigata | Preparation of Cu2ZnSnS4 thin film by sol-gel sulfurization method with Cl free coating solutions Kota Sakuma, Kunihiko Tanaka, Takumi Aizawa, Yuya Nakano, Hisao Uchiki (NUT) CPM2012-98 |
[more] | CPM2012-98 pp.29-32 |
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| CPM | 2012-10-26 16:05 |
Niigata | Optimization of sulfurization in CZTS thin film solar cells Kento Higuchi, Tsukasa Washio, Kazuo Jimbo, Hironori Katagiri (NNCT) CPM2012-99 |
In order to optimize the sulfurization conditions, we sulfurized precursors with various holding times. The other parame... [more] | CPM2012-99 pp.33-37 |
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| CPM | 2012-10-26 16:40 |
Niigata | Formation of AlN layers on Si substrates and growth of 3C-SiC on AlN/Si substrates Hideki Nakazawa, Daiki Suzuki, Tsugutada Narita, Yohei Yamamoto (Hirosaki Univ.) CPM2012-100 |
[more] | CPM2012-100 pp.39-44 |
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| CPM | 2012-10-26 17:05 |
Niigata | Interface between GaP and Si substrates prepared using metalorganic vapor phase epitaxy Tatsuya Takagi, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.) CPM2012-101 |
GaP layers were grown on Si substrates 2° or 4°-misoriented toward (011) using metalorganic vapor phase epitaxy. The sub... [more] | CPM2012-101 pp.45-48 |
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| CPM | 2012-10-26 17:30 |
Niigata | Formation of multi-phases of monosilicide and disilicide in Ni/Si system Atsushi Noya, Mayumi Takeyama, Masaru Sato, Susumu Tokuda (Kitami Inst. Technol.) CPM2012-102 |
Abstract Silicides nucleation in a Ni/Si system was investigated. In this system, generally, a phase sequence of Ni2Si... [more] | CPM2012-102 pp.49-53 |
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| CPM | 2012-10-26 17:55 |
Niigata | Interfacial reaction and/or diffusion in Cu/metal/SiO2/Si system (I)
-- Diffusion behavior of Va transition metal -- Mayumi B. Takeyama, Atsushi Noya (Kitami Inst. of Technol.) CPM2012-103 |
Cu multi-level interconnects in Si-LSIs require an effective barrier metal between Cu and a field insulating layer as a ... [more] | CPM2012-103 pp.55-60 |
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| CPM | 2012-10-27 09:10 |
Niigata | CuAlO2 film deposition by reactive sputtering using Cu/Al target prepared by Cold Spray method Takuya Yokomoto, Takashi Arai, Takayuki Kosaka, Kazuki Okajima, Tomohiko Yamakami, Katsuya Abe, Kazuhiko Sakaki (Shinshu Univ.) CPM2012-104 |
CuAlO2 film deposition was tried by reactive sputtering using Cu/Al targets prepared by cold spray method.The Cu/Al ta... [more] |
CPM2012-104 pp.61-64 |
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| CPM | 2012-10-27 09:35 |
Niigata | Examination of underlayer for SrAl2O4: Eu, Dy thin films by annealing methods Kazuaki Kobayashi, Hidehiko Shimizu, Haruo Iwano, Yasuo Fukushima, Takahiro Kawakami (Niigata Univ.) CPM2012-105 |
In order to examine characteristics of the thin films, SrAl2O4: Eu, Dy thin films were attempted by post-annealing in Ar... [more] | CPM2012-105 pp.65-69 |
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| CPM | 2012-10-27 10:00 |
Niigata | Mechanical Properties of the OLEDs and ITO Films Prepared on Plastic Substrates Hiroaki Matsui, Hidehiko Shimizu, Haruo Iwano, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.) CPM2012-106 |
In order to examine that mechanical properties of OLEDs with ITO thin films deposited on PEN substrates at low temperatu... [more] | CPM2012-106 pp.71-76 |
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| CPM | 2012-10-27 10:25 |
Niigata | Energy Transfer Process in YVO4:Bi Yellow Phosphor Taiga Abe, Kouta Taniguchi, Junpei Yagi, Ariyuki Kato (Nagaoka Univ. of Tech.) CPM2012-107 |
Temperature dependences of PL and PLE spectra of YVO_4:Bi yellow phosphor have been investigated. With increasing temper... [more] | CPM2012-107 pp.77-80 |
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| CPM | 2012-10-27 11:00 |
Niigata | Manufacturing and Characterization of Graphene Intercalation Compounds Hiroshi Yamamoto, Hiroaki Ichikawa, Shogo Satoh, Nobuyuki Iwata (Nihon Univ.) CPM2012-108 |
The purposes of this work are to prepare graphenes by CVD and to synthesize FeCl3- intercalated compounds of graphites (... [more] | CPM2012-108 pp.81-86 |
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| CPM | 2012-10-27 11:25 |
Niigata | Field Emission Characteristics Considering both the Shield Effect and Series Resistance Yuji Asada, Masahiro Yamashita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2012-109 |
To estimate the effects of series resistance on the field emission current associated with an array of carbon nanotubes ... [more] | CPM2012-109 pp.87-90 |
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| CPM | 2012-10-27 11:50 |
Niigata | Estimation of the number of junctions in the Bi-2212 stack by pulse current method Takahiro Kato, Tsubasa Nishikata, Yukio Kotaki, Hisayuki Suematsu, Kanji Yasui (Nagaoka Univ. Tech), Akira Kawakami (NICT) CPM2012-110 |
[more] | CPM2012-110 pp.91-96 |
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| CPM | 2012-10-27 12:15 |
Niigata | Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.) CPM2012-111 |
Ge nanodots were formed on Si(001)-2˚off substrates after the formation of Si c(4×4) structure by gas-source molecu... [more] | CPM2012-111 pp.97-100 |
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