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| Chair |
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Yasushi Takemura (Yokohama National Univ.) |
| Vice Chair |
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Yasushi Takano (Shizuoka Univ.) |
| Secretary |
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Toshishige Shimamura (NTT), Katsuya Abe (Shinshu Univ.) |
| Assistant |
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Koji Enbutsu (NTT), Tomomasa Sato (Kanagawa Univ.) |
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|
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| Chair |
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Tetsu Kachi (Toyota Central R&D Labs.) |
| Vice Chair |
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Naoki Hara (Fujitsu Labs.) |
| Secretary |
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Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.) |
| Assistant |
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Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.) |
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| Chair |
|
Tsukuru Katsuyama (Sumitomo Electric Industries) |
| Vice Chair |
|
Hiroyuki Tsuda (Keio Univ.) |
| Secretary |
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Tomoyuki Miyamoto (Tokyo Inst. of Tech.), Kazunori Shinoda (Hitachi) |
|
| Conference Date |
Thu, Nov 17, 2011 10:05 - 18:00
Fri, Nov 18, 2011 09:30 - 15:55 |
| Topics |
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| Conference Place |
Katsura Hall, Katsura Campus, Kyoto Univ. |
| Address |
Kyoto-Daigaku-Katura, Nishikyo-ku, Kyoto 615-8530 |
| Transportation Guide |
Bus 15min from JR Katsuragawa st.
http://www.t.kyoto-u.ac.jp/en/access/katsura/index.html?set_language=en |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Nov 17 AM
10:00 - 18:00 |
| |
10:00-10:05 |
Opening Remarks ( 5 min. ) |
| (1) |
10:05-10:30 |
AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy  ED2011-73 CPM2011-122 LQE2011-96 |
Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) |
| (2) |
10:30-10:55 |
Control of interlayer on MOVPE growth of AlN on sapphire substrate ED2011-74 CPM2011-123 LQE2011-97 |
Reina Miyagawa, Shibo Yang, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Takaaki Kuwahara, Noriyuki Kuwano, Masatoshi Mitsuhara (Kyushu Univ.) |
| (3) |
10:55-11:20 |
Etch-pit method of threading dislocations in epitaxial AlN films ED2011-75 CPM2011-124 LQE2011-98 |
Takuya Nomura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Ryu, Takaaki Kuwahara, Noriyuki Kuwano (Kyusyu Univ.) |
| (4) |
11:20-11:45 |
Decreasing Dislocation Density of MOCVD-GaN Using Silicon Dioxide Masks ED2011-76 CPM2011-125 LQE2011-99 |
Masaru Tanimoto, Shiro Sakai (Tokushima Univ.) |
| |
11:45-12:55 |
Lunch Break ( 70 min. ) |
| (5) |
12:55-13:20 |
Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control ED2011-77 CPM2011-126 LQE2011-100 |
Hajime Fujikura, Yuichi Oshima, Takehiro Yoshida, Takeshi Megro, Toshiya Saito (Hitachi Cable) |
| (6) |
13:20-13:45 |
Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN ED2011-78 CPM2011-127 LQE2011-101 |
Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) |
| (7) |
13:45-14:10 |
Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures ED2011-79 CPM2011-128 LQE2011-102 |
Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) |
| (8) |
14:10-14:35 |
Characterization of insulators and interfaces in GaN-based MIS-diodes ED2011-80 CPM2011-129 LQE2011-103 |
Yasuhiro Iwata, Toshiharu Kubo, Takashi Egawa (NITech) |
| |
14:35-14:50 |
Break ( 15 min. ) |
| (9) |
14:50-15:15 |
Current Transport Characteristics of Quasi-AlGaN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities ED2011-81 CPM2011-130 LQE2011-104 |
Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) |
| (10) |
15:15-15:40 |
Analysis of Recovery process in AlGaN/GaN HFET Current Collapse ED2011-82 CPM2011-131 LQE2011-105 |
Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS) |
| (11) |
15:40-16:05 |
Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures ED2011-83 CPM2011-132 LQE2011-106 |
Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada (NTT) |
| (12) |
16:05-16:30 |
High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch ED2011-84 CPM2011-133 LQE2011-107 |
Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen (AIST), Tatsuo Morita, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) |
| |
16:30-16:45 |
Break ( 15 min. ) |
| (13) |
16:45-17:10 |
Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications ED2011-85 CPM2011-134 LQE2011-108 |
Masato Nishimori, Kozo Makiyama, Toshihiro Ohki, Atsushi Yamada, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Keiji Watanabe (Fujitsu Lab.) |
| (14) |
17:10-17:35 |
Ultraviolet Photodetectors using Transparent Gate AlGaN/GaN-HEMT ED2011-86 CPM2011-135 LQE2011-109 |
Tomotaka Narita, Akio Wakejima, Takashi Egawa (NIT) |
| (15) |
17:35-18:00 |
Concentrating properties of nitride-based solar cells ED2011-87 CPM2011-136 LQE2011-110 |
Mikiko Mori, Shota Yamamoto, Yosuke Kuwahara, Takahiro Fujii, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) |
Fri, Nov 18 AM
09:30 - 15:55 |
| (16) |
09:30-09:55 |
Strain-Induced Effects on the Electronic Band Structure of AlN ED2011-88 CPM2011-137 LQE2011-111 |
Ryota Ishii, Akio Kaneta, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (17) |
09:55-10:20 |
Microstructural observation of AlGaN on ELO-AlN ED2011-89 CPM2011-138 LQE2011-112 |
Kimiyasu Ide, Junichi Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) |
| (18) |
10:20-10:45 |
2D-mapping measurement of residual strain in GaN substrates by micro-reflectance spectroscopy ED2011-90 CPM2011-139 LQE2011-113 |
Atsushi Yamaguchi (Kanazawa Inst. Tech.), H. Y. Geng, Haruo Sunakawa, Y. Ishihara, Toshiharu Matsueda, Akira Usui (Furukawa) |
| (19) |
10:45-11:10 |
Effect of Mg co-doping on optical characteristics of GaN:Eu ED2011-91 CPM2011-140 LQE2011-114 |
Hiroto Sekiguchi (Toyohashi Univ. Tech.), Yasufumi Takagi (Hamamatsu Photonics), Tatsuki Otani, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) |
| (20) |
11:10-11:35 |
Optical gain spectra in semipolar {20-21} oriented green InGaN LDs in comparison with (0001) LDs ED2011-92 CPM2011-141 LQE2011-115 |
Yoon Seok Kim, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Kyono, Masaki Ueno, Takao Nakamura (Sumitomo Electric) |
| |
11:35-12:45 |
Lunch Break ( 70 min. ) |
| (21) |
12:45-13:10 |
Development of 260-nm AlGaN-based deep-ultraviolet light-emitting diodes using 2inchx3 MOVPE system ED2011-93 CPM2011-142 LQE2011-116 |
Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Norimichi Noguchi, Kenji Tsubaki (RIKEN/PEW) |
| (22) |
13:10-13:35 |
Investigation for chracteristics of AlN growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN Deep-UV LEDs ED2011-94 CPM2011-143 LQE2011-117 |
Noritoshi Maeda, Hideki Hirayama, Sachie Fujikawa (RIKEN) |
| (23) |
13:35-14:00 |
Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates ED2011-95 CPM2011-144 LQE2011-118 |
Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Kenji Tsubaki (RIKEN/PEW), Masakazu Sugiyama (Tokyo Univ.) |
| |
14:00-14:15 |
Break ( 15 min. ) |
| (24) |
14:15-14:40 |
Growth of (Si)(Ga)AlC(P) thin film on sapphire by metal organic chemical vapor deposition ED2011-96 CPM2011-145 LQE2011-119 |
Yuya Ohnishi, Fumiya Horie, Shiro Sakai (Tokushimadai) |
| (25) |
14:40-15:05 |
Metalorganic Chemical Vapor Deposition Growth of GaN Nanowires and Their Application to Single Photon Sources ED2011-97 CPM2011-146 LQE2011-120 |
Munetaka Arita, Kihyun Choi, Yasuhiko Arakawa (Univ. of Tokyo) |
| (26) |
15:05-15:30 |
Fabrication and characterization of near-infrared (1.46 um) GaN-based nanocolumn LEDs with In-rich InGaN active layer ED2011-98 CPM2011-147 LQE2011-121 |
Jumpei Kamimura, Katsumi Kishino, Kouichi Kamiyama, Akihiko Kikuchi (Sophia Univ.) |
| (27) |
15:30-15:55 |
Fabrication of GaN based Terahertz-Quantum Cascade Laser Structure and Observation of Spontaneous Emission ED2011-99 CPM2011-148 LQE2011-122 |
Wataru Terashima, Hideki Hirayama (RIKEN) |
| |
15:55-16:00 |
Closing Remarks ( 5 min. ) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
| Contact Address |
|
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Hara Naoki （Fujitsu Lab.）
TEL : +81-46-250-8242、FAX : +81-46-250-8168
E- :     o      
Kunio Tsuda（Toshiba）
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E- :   o   ba
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- :      t 
Tetsuzo Ueda（Panasonic)
TEL：+81-75-956-8273、FAX：+81-75-956-9110
E-：   zopa c |
| LQE |
Technical Committee on Lasers and Quantum Electronics (LQE) [Latest Schedule]
|
| Contact Address |
Tomoyuki Miyamoto (Tokyo Institute of Technology)
TEL +81-45-924-5059, FAX +81-45-924-5977
E-: t  tpi 
Kazunori Shinoda (Hitachi)
TEL +81-42-323-1111，FAX +81-42-327-7786
E-:     nv |
| Announcement |
Homepage of LQE is http://www.ieice.org/~lqe/jpn/ |
Last modified: 2011-10-17 09:15:45
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