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Technical Committee on Electron Devices (ED) (Searched in: 2011)
Search Results: Keywords 'from:2011-11-17 to:2011-11-17'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2011-11-17 10:05 |
Kyoto | Katsura Hall，Kyoto Univ. | AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.)  ED2011-73 CPM2011-122 LQE2011-96 |
Recently, we have successfully reduced the threading dislocation density in AlN layer on SiC substrates to 10$^8$ cm$^{-... [more] | ED2011-73 CPM2011-122 LQE2011-96 pp.1-4 |
| LQE, ED, CPM | 2011-11-17 10:30 |
Kyoto | Katsura Hall，Kyoto Univ. | Control of interlayer on MOVPE growth of AlN on sapphire substrate Reina Miyagawa, Shibo Yang, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Takaaki Kuwahara, Noriyuki Kuwano, Masatoshi Mitsuhara (Kyushu Univ.) ED2011-74 CPM2011-123 LQE2011-97 |
The strong demands for high-efficiency light-emitting diodes and for high-sensitivity sensors in the deep-ultraviolet (U... [more] | ED2011-74 CPM2011-123 LQE2011-97 pp.5-10 |
| LQE, ED, CPM | 2011-11-17 10:55 |
Kyoto | Katsura Hall，Kyoto Univ. | Etch-pit method of threading dislocations in epitaxial AlN films Takuya Nomura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Ryu, Takaaki Kuwahara, Noriyuki Kuwano (Kyusyu Univ.) ED2011-75 CPM2011-124 LQE2011-98 |
AlN is an attractive substrate for short-wavelength optoelectronics devices based on AlGaN. We have investigated threadi... [more] | ED2011-75 CPM2011-124 LQE2011-98 pp.11-14 |
| LQE, ED, CPM | 2011-11-17 11:20 |
Kyoto | Katsura Hall，Kyoto Univ. | Decreasing Dislocation Density of MOCVD-GaN Using Silicon Dioxide Masks Masaru Tanimoto, Shiro Sakai (Tokushima Univ.) ED2011-76 CPM2011-125 LQE2011-99 |
[more] | ED2011-76 CPM2011-125 LQE2011-99 pp.15-18 |
| LQE, ED, CPM | 2011-11-17 12:55 |
Kyoto | Katsura Hall，Kyoto Univ. | Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control Hajime Fujikura, Yuichi Oshima, Takehiro Yoshida, Takeshi Megro, Toshiya Saito (Hitachi Cable) ED2011-77 CPM2011-126 LQE2011-100 |
In the growth of freestanding GaN substrates using our void-assisted separation (VAS) method, we have effectively suppre... [more] | ED2011-77 CPM2011-126 LQE2011-100 pp.19-24 |
| LQE, ED, CPM | 2011-11-17 13:20 |
Kyoto | Katsura Hall，Kyoto Univ. | Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) ED2011-78 CPM2011-127 LQE2011-101 |
We have investigated impacts of dry etching of GaN and AlGaN surfaces on interface properties of GaN-based MOS structure... [more] | ED2011-78 CPM2011-127 LQE2011-101 pp.25-28 |
| LQE, ED, CPM | 2011-11-17 13:45 |
Kyoto | Katsura Hall，Kyoto Univ. | Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2011-79 CPM2011-128 LQE2011-102 |
This paper describes the temperature dependent two dimensional electron gas (2DEG) properties in AlInN/AlN/GaN heterostr... [more] | ED2011-79 CPM2011-128 LQE2011-102 pp.29-33 |
| LQE, ED, CPM | 2011-11-17 14:10 |
Kyoto | Katsura Hall，Kyoto Univ. | Characterization of insulators and interfaces in GaN-based MIS-diodes Yasuhiro Iwata, Toshiharu Kubo, Takashi Egawa (NITech) ED2011-80 CPM2011-129 LQE2011-103 |
[more] | ED2011-80 CPM2011-129 LQE2011-103 pp.35-38 |
| LQE, ED, CPM | 2011-11-17 14:50 |
Kyoto | Katsura Hall，Kyoto Univ. | Current Transport Characteristics of Quasi-AlGaN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) ED2011-81 CPM2011-130 LQE2011-104 |
[more] | ED2011-81 CPM2011-130 LQE2011-104 pp.39-42 |
| LQE, ED, CPM | 2011-11-17 15:15 |
Kyoto | Katsura Hall，Kyoto Univ. | Analysis of Recovery process in AlGaN/GaN HFET Current Collapse Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS) ED2011-82 CPM2011-131 LQE2011-105 |
The recovery process of AlGaN/GaN HFET current collapse is measured. From LED light irradiation experiments, it is estim... [more] | ED2011-82 CPM2011-131 LQE2011-105 pp.43-48 |
| LQE, ED, CPM | 2011-11-17 15:40 |
Kyoto | Katsura Hall，Kyoto Univ. | Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada (NTT) ED2011-83 CPM2011-132 LQE2011-106 |
In recessed-gate AlGaN/GaN Heterostructure field-effect transistors (HFETs) for E-mode operation, enhanced-barrier struc... [more] | ED2011-83 CPM2011-132 LQE2011-106 pp.49-54 |
| LQE, ED, CPM | 2011-11-17 16:05 |
Kyoto | Katsura Hall，Kyoto Univ. | High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen (AIST), Tatsuo Morita, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-84 CPM2011-133 LQE2011-107 |
GaN-Gate Injection Transistor(GIT) Bi-directional Switches (BDSWs) is capable of the low on-resistance operation as comp... [more] | ED2011-84 CPM2011-133 LQE2011-107 pp.55-60 |
| LQE, ED, CPM | 2011-11-17 16:45 |
Kyoto | Katsura Hall，Kyoto Univ. | Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications Masato Nishimori, Kozo Makiyama, Toshihiro Ohki, Atsushi Yamada, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Keiji Watanabe (Fujitsu Lab.) ED2011-85 CPM2011-134 LQE2011-108 |
[more] | ED2011-85 CPM2011-134 LQE2011-108 pp.61-65 |
| LQE, ED, CPM | 2011-11-17 17:10 |
Kyoto | Katsura Hall，Kyoto Univ. | Ultraviolet Photodetectors using Transparent Gate AlGaN/GaN-HEMT Tomotaka Narita, Akio Wakejima, Takashi Egawa (NIT) ED2011-86 CPM2011-135 LQE2011-109 |
Transparent gate AlGaN/GaN HEMT(High Electron Mobility Transistor) on a Si substrate was fabricated. We estimated as cha... [more] | ED2011-86 CPM2011-135 LQE2011-109 pp.67-70 |
| LQE, ED, CPM | 2011-11-17 17:35 |
Kyoto | Katsura Hall，Kyoto Univ. | Concentrating properties of nitride-based solar cells Mikiko Mori, Shota Yamamoto, Yosuke Kuwahara, Takahiro Fujii, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-87 CPM2011-136 LQE2011-110 |
In this study, we investigated the concentrating properties of nitride based solar cells up to 200 suns. The conversion ... [more] | ED2011-87 CPM2011-136 LQE2011-110 pp.71-75 |
| LQE, ED, CPM | 2011-11-18 09:30 |
Kyoto | Katsura Hall，Kyoto Univ. | Strain-Induced Effects on the Electronic Band Structure of AlN Ryota Ishii, Akio Kaneta, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2011-88 CPM2011-137 LQE2011-111 |
The top of the valence band structure in Wurtzite crystals is split to the irreducible representation of Γ1 and Γ5 by t... [more] |
ED2011-88 CPM2011-137 LQE2011-111 pp.77-80 |
| LQE, ED, CPM | 2011-11-18 09:55 |
Kyoto | Katsura Hall，Kyoto Univ. | Microstructural observation of AlGaN on ELO-AlN Kimiyasu Ide, Junichi Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-89 CPM2011-138 LQE2011-112 |
AlGaN-based ultraviolet light emitting device has been achieved as the high spec LED from UV-A to UV-C. It is widely exp... [more] | ED2011-89 CPM2011-138 LQE2011-112 pp.81-85 |
| LQE, ED, CPM | 2011-11-18 10:20 |
Kyoto | Katsura Hall，Kyoto Univ. | 2D-mapping measurement of residual strain in GaN substrates by micro-reflectance spectroscopy Atsushi Yamaguchi (Kanazawa Inst. Tech.), H. Y. Geng, Haruo Sunakawa, Y. Ishihara, Toshiharu Matsueda, Akira Usui (Furukawa) ED2011-90 CPM2011-139 LQE2011-113 |
We have developed a novel method to precisely measure very small residual strains (~0.01%) in GaN substrates with micron... [more] | ED2011-90 CPM2011-139 LQE2011-113 pp.87-91 |
| LQE, ED, CPM | 2011-11-18 10:45 |
Kyoto | Katsura Hall，Kyoto Univ. | Effect of Mg co-doping on optical characteristics of GaN:Eu Hiroto Sekiguchi (Toyohashi Univ. Tech.), Yasufumi Takagi (Hamamatsu Photonics), Tatsuki Otani, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2011-91 CPM2011-140 LQE2011-114 |
Rare-earth doped semiconductor is a promising candidate for next generation light-emitting devices due to superior optic... [more] | ED2011-91 CPM2011-140 LQE2011-114 pp.93-97 |
| LQE, ED, CPM | 2011-11-18 11:10 |
Kyoto | Katsura Hall，Kyoto Univ. | Optical gain spectra in semipolar {20-21} oriented green InGaN LDs in comparison with (0001) LDs Yoon Seok Kim, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Kyono, Masaki Ueno, Takao Nakamura (Sumitomo Electric) ED2011-92 CPM2011-141 LQE2011-115 |
[more] | ED2011-92 CPM2011-141 LQE2011-115 pp.99-102 |
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