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Technical Committee on Integrated Circuits and Devices (ICD) (Searched in: 2013)
Search Results: Keywords 'from:2013-04-11 to:2013-04-11'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD | 2013-04-11 09:00 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
A Low Power Phase Change Memory Using Low Thermal Conductive Material with Nano-Crystalline Structure Takahiro Morikawa, Ken'ichi Akita, Takasumi Ohyanagi, Masahito Kitamura, Masaharu Kinoshita, Mitsuharu Tai, Norikatsu Takaura (LEAP)  ICD2013-1 |
[more] | ICD2013-1 pp.1-4 |
| ICD | 2013-04-11 09:50 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
A Novel MTJ for STT-MRAM with a Dummy Free Layer and Dual Tunnel Junctions Koji Tsunoda, Hideyuki Noshiro, Chikako Yoshida, Yuuichi Yamazaki, Atsushi Takahashi, Yoshihisa Iba, Akiyoshi Hatada, Masaaki Nakabayashi, Takashi Takenaga, Masaki Aoki, Toshihiro Sugii (LEAP) ICD2013-2 |
A novel magnetic tunnel junction (MTJ) for embedded memory applications such as spin transfer torque magneto-resistive r... [more] | ICD2013-2 pp.5-10 |
| ICD | 2013-04-11 10:50 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
An Inductive-Coupling Wake-Up Transceiver for Standby Power Reduction of Non-Contact Memory Card Noriyuki Miura (Kobe Univ.), Mitsuko Saito, Masao Taguchi, Tadahiro Kuroda (Keio Univ.) ICD2013-3 |
A normally-off-type inductive-coupling wake-up transceiver is developed to 1/500 the standby power consumption of non-co... [more] | ICD2013-3 pp.11-14 |
| ICD | 2013-04-11 11:40 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
Filament Scaling Forming Technique and Level-Verify-Write Scheme with Endurance Over 10 million Cycles in ReRAM Akifumi Kawahara, Ken Kawai, Yuuichirou Ikeda, Yoshikazu Katoh, Ryotaro Azuma, Yuhei Yoshimoto, Kouhei Tanabe, Zhiqiang Wei, Takeki Ninomiya, Koji Katayama, Shunsaku Muraoka, Atsushi Himeno, Kazuhiko Shimakawa, Takeshi Takagi, Kunitoshi Aono (Panasonic) ICD2013-4 |
Endurance characteristics over 10 million cycles almost 10 times higher as existing, and the small filament for leading ... [more] | ICD2013-4 pp.15-20 |
| ICD | 2013-04-11 13:30 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
Restructuring of Memory Hierarchy in Computing System with Spintronics-Based Technologies Tetsuo Endoh (Tohoku Univ.) ICD2013-5 |
In the memory hierarchy of current computer systems, the trade-off between their performance and power consumption is be... [more] | ICD2013-5 pp.21-26 |
| ICD | 2013-04-11 14:20 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Lecture]
1Mb 4T-2MTJ Nonvolatile STT-RAM for Embedded Memories Using 32b Fine-Grained Power Gating Technique
-- Achieves 1.0ns/200ps Wake-Up/Power-Off Times -- Tetsuo Endoh, Takashi Ohsawa, Hiroki Koike (Tohoku Univ.), Sadahiko Miura, Hiroaki Honjo, Keiichi Tokutome (NEC), Shoji Ikeda, Takahiro Hanyu, Hideo Ohno (Tohoku Univ.) ICD2013-6 |
A 1Mb embedded memory was designed and fabricated using a cell consisting of four NFETs and two spin-transfer torque mag... [more] | ICD2013-6 pp.27-32 |
| ICD | 2013-04-11 14:45 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Lecture]
Fabrication of a Nonvolatile TCAM Chip Based on 4T-2MTJ Cell Structure Shoun Matsunaga (Tohoku Univ.), Sadahiko Miura, Hiroaki Honjo (NEC), Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu (Tohoku Univ.) ICD2013-7 |
Higher density and lower standby power are demanded in ternary content-addressable memory (TCAM), that realizes huge num... [more] | ICD2013-7 pp.33-38 |
| ICD | 2013-04-11 15:30 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
Novel Vertical Magnetization STT-MRAM Technologies for Reducing Power of High Performance Mobile Processors Shinobu Fujita, Keiko Abe, Hiroki Noguchi, Kumiko Nomura, Eiji Kitagawa, Naoharu Shimomura, Junichi Ito, Hiroaki Yoda (Toshiba) ICD2013-8 |
[more] | ICD2013-8 pp.39-40 |
| ICD | 2013-04-11 16:20 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | Highly Reliable Logic Primitive Gates for Spintronics-Based Logic LSI Yukihide Tsuji, Ryusuke Nebashi, Noboru Sakimura, Ayuka Morioka, Hiroaki Honjo, Keiichi Tokutome, Sadahiko Miura (NEC), Tetsuhiro Suzuki (Renesas Electronics Corp.), Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno (Tohoku Univ.), Tadahiko Sugibayashi (NEC) ICD2013-9 |
Implementing redundancy within a Spintronis Primitive Gata (SPG) using multi-terminal DWM cells ensures high reliability... [more] | ICD2013-9 pp.41-46 |
| ICD | 2013-04-11 16:45 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | Spin-Transfer Torque RAM Cache Energy Reduction Using Zero-Data Flags Yuta Kimi, Jinwook Jung, Yohei Nakata, Masahiko Yoshimoto, Hiroshi Kawaguchi (Kobe Univ.) ICD2013-10 |
In this paper, we propose an energy reduction scheme for Spin-Transfer Torque RAM (STT-RAM) Caches. Introducing STT-RAM ... [more] | ICD2013-10 pp.47-52 |
| ICD | 2013-04-11 17:30 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Panel Discussion]
Future prospects of memory solutions for smart society
-- Can new nonvolatile memories replace SRAM/DRAM/Flash? -- Koji Nii (Renesas Erctronics), Tetsuo Endoh (Tohoku Univ.), Yoshikazu Katoh (Panasonic), Satoru Hanzawa (Hitachi), Kazuhiko Kajigaya (Elpida Memory), Atsushi Kawasumi (Toshiba), Toru Miwa (SanDisk) ICD2013-11 |
(To be available after the conference date) [more] | ICD2013-11 p.53 |
| ICD | 2013-04-12 08:30 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
Complementary atom-switch based programmable cell array and its demostraion of logic mapping synthesized from RTL code Makoto Miyamura, Munehiro Tada, Toshitsugu Sakamoto, Naoki Banno, Koichiro Okamoto, Noriyuki Iguchi, Hiromitsu Hada (LEAP) ICD2013-12 |
Reconfigurable nonvolatile programmable-logic using complementary atom switch (CAS) is successfully demonstrated on a 65... [more] | ICD2013-12 pp.55-59 |
| ICD | 2013-04-12 09:20 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
High Performance and High Reliability 40nm Embedded SG-MONOS Flash Macros for Automotive
-- 160MHz Random Access for Code and Endurance Over 10M Cycles for Data -- Tomoya Ogawa, Takashi Kono, Takashi Ito, Tamaki Tsuruda, Takayuki Nishiyama, Tsutomu Nagasawa, Yoshiyuki Kawashima, Hideto Hidaka, Tadaaki Yamauchi (Renesas Electronics) ICD2013-13 |
The markets of Flash MCUs, microcontrollers with embedded flash memory (eFlash), have been steadily growing since the mi... [more] | ICD2013-13 pp.61-66 |
| ICD | 2013-04-12 10:20 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
Unified Solid-State-Storage Architecture with NAND Flash Memory and ReRAM that Tolerates 32× Higher BER for Big-Data Applications Shuhei Tanakamaru (Chuo Univ./Univ. of Tokyo), Masafumi Doi, Ken Takeuchi (Chuo Univ.) ICD2013-14 |
Unified solid-state storage (USSS) with hybrid NAND flash memory / ReRAM provides high system-level data protection. Fou... [more] | ICD2013-14 pp.67-72 |
| ICD | 2013-04-12 11:10 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Lecture]
A High Performance Storage Class Memory/MLC NAND Hybrid SSD with Anti-Fragmentation Algorithm Kousuke Miyaji (Chuo Univ.), Hiroki Fujii (Univ. of Tokyo), Koh Johguchi (Chuo Univ.), Kazuhide Higuchi, Chao Sun (Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2013-15 |
A 3D through-silicon-via (TSV) -integrated hybrid storage class memory (SCM)/multi-level-cell (MLC) NAND solid-state dri... [more] | ICD2013-15 pp.73-78 |
| ICD | 2013-04-12 11:35 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Lecture]
Design of Vset/reset(3V), Vpgm(20V) generator system for 3D-ReRAM and NAND flash memory hybrid solid-state drives Teruyoshi Hatanaka (Chuo Univ./Univ. of Tokyo), Koh Johguchi, Shogo Hachiya, Ken Takeuchi (Chuo Univ.) ICD2013-16 |
[more] | ICD2013-16 pp.79-84 |
| ICD | 2013-04-12 12:00 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Lecture]
An Integrated Variable Positive/Negative Temperature Coefficient Read Reference Generator for MLC PCM/NAND Hybrid 3D SSD Kousuke Miyaji, Koh Johguchi (Chuo Univ.), Kazuhide Higuchi (Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2013-17 |
An integrated variable temperature coefficient (TC) reference generator for multi-level cell phase change memory (PCM)/N... [more] | ICD2013-17 pp.85-90 |
| ICD | 2013-04-12 13:30 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
A Sense-Amplifier-Timing-Generating Circuit Utilizing a Statistical Method for Ultra Low Voltage SRAMs Atsushi Kawasumi, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yusuke Niki, Sinichi Sasaki, Tomoaki Yabe (Toshiba) ICD2013-18 |
A variation tolerant sense amplifier timing generator which utilizes a statistical method is proposed. The circuit monit... [more] | ICD2013-18 pp.91-96 |
| ICD | 2013-04-12 14:20 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Lecture]
A Power-Reduction Scheme for Dual-Power-Supply SRAM Using BL Power Calculator and Digital LDO Miyako Shizuno, Fumihiko Tachibana, Osamu Hirabayashi, Yasuhisa Takeyama, Atsushi Kawasumi, Keiichi Kushida, Azuma Suzuki, Yusuke Niki, Sinichi Sasaki, Tomoaki Yabe, Yasuo Unekawa (Toshiba) ICD2013-19 |
This paper presents a dual-power-supply SRAM that reduces active and stand-by power from room temperature (RT) to high t... [more] | ICD2013-19 pp.97-102 |
| ICD | 2013-04-12 14:45 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Lecture]
A 13.8pJ/Access/Mbit SRAM with Charge Collector Circuits for Effective Use of Non-Selected Bit Line Charges Shinichi Moriwaki, Yasue Yamamoto, Toshikazu Suzuki (STARC), Atsushi Kawasumi (Toshiba), Shinji Miyano, Hirofumi Shinohara (STARC), Takayasu Sakurai (Univ. Tokyo) ICD2013-20 |
1Mb SRAM with charge collector circuits for effective use of non-selected bit line charges has been fabricated in 40nm t... [more] | ICD2013-20 pp.103-108 |
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