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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 101 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
RCS, AP
(Joint)
2018-11-22
15:50
Okinawa Okinawa Industry Support Center Performance Evaluation of Low-SHF-Band Digital Beamforming in High-Mobility Experimental Trial
Tatsuki Okuyama, Kazushi Muraoka (NTT DOCOMO), Daisuke Nose, Tomohiro Kikuma, Yasushi Maruta (NEC), Satoshi Suyama, Jun Mashino, Yukihiko Okumura (NTT DOCOMO) RCS2018-215
The fifth-generation (5G) mobile communication system utilizes Massive MIMO using many number of antenna elements in hig... [more] RCS2018-215
pp.211-216
RCS 2018-10-19
10:30
Tokyo Kikai-Shinko-Kaikan Bldg. Vehicle-to-Pedestrian Connectivity on High Frequency Band Vehicle-Installed Access Points for Adaptive Mobile Network
Kazuki Maruta (Chiba Univ.), Yu Nakayama (Aoyama Gakuin Univ.), Kazuaki Honda (Keio Univ.), Daisuke Hisano (Osaka Univ.), Ken Tanaka (neko 9 Lab.), Chang-Jun Ahn (Chiba Univ.) RCS2018-167
We previously conceived a concept of adaptive mobile network to track the demand traffic fluctuation via vehicle-install... [more] RCS2018-167
pp.89-94
SAT, RCS
(Joint)
2018-08-09
11:20
Iwate Iwate University Field Trial of 28 GHz Band Downlink Massive MIMO in Railway Environment
Yuta Takahashi, Hiroyuki Miyazaki, Tatsuki Okuyama, Kazushi Muraoka, Jun Mashino, Satoshi Suyama, Yukihiko Okumura (NTT DOCOMO) RCS2018-133
Field trials of the fifth-generation (5G) mobile communication system using 28 GHz band at which almost 1-GHz band will ... [more] RCS2018-133
pp.13-18
ASN, NS, RCS, SR, RCC
(Joint)
2018-07-12
14:05
Hokkaido Hakodate Arena Outdoor Trial of Beamforming in Ultra-Highly Mobile Environment -- Downlink Massive MIMO Performance at 28GHz --
Kazushi Muraoka, Yuta Takahashi, Jun Mashino, Satoshi Suyama, Yukihiko Okumura (NTT DOCOMO) RCS2018-111
Field trials of the fifth-generation (5G) mobile communication system using 28GHz band at which almost 1-GHz band will b... [more] RCS2018-111
pp.149-154
ASN, NS, RCS, SR, RCC
(Joint)
2018-07-12
14:30
Hokkaido Hakodate Arena Outdoor Trial of Beamforming in Ultra-Highly Mobile Environment -- Uplink Massive MIMO and Handover Performances at 28GHz --
Yuta Takahashi, Kazushi Muraoka, Jun Mashino, Satoshi Suyama, Yukihiko Okumura (NTT DOCOMO) RCS2018-112
Field trials of the fifth-generation (5G) mobile communication system using 28 GHz band at which almost 1-GHz band will ... [more] RCS2018-112
pp.155-160
IN, RCS, NV
(Joint)
2018-05-10
15:40
Kanagawa Keio University [Invited Lecture] 3GPP standardization activities for relay based high speed scenario for 5G
Fumihiro Hasegawa, Akinori Taira (Mitsubishi Electric Corp.), Gosan Noh, Bing Hui (ETRI), Hiroshi Nishimoto, Akihiro Okazaki, Atsushi Okamura (Mitsubishi Electric Corp.), Junhwan Lee, Ilgyu Kim (ETRI) IN2018-3 RCS2018-28
In 3GPP NR (New Radio), high speed train (HST) is considered as one of the essential verticals in 5G applications. In th... [more] IN2018-3 RCS2018-28
pp.13-18(IN), pp.37-42(RCS)
ED, THz 2017-12-19
09:00
Miyagi RIEC, Tohoku Univ [Invited Talk] Development of Antimonide-Based Transistors
Hiroki Fujishiro, Kyosuke Isono, Takuto Takahashi, Yoshiaki Harada, Naoki Oka, Jun Takeuchi, Yui Fujisawa (TUS), Sachie Fujikawa (Tokyo Denki Univ.), Ryuto Machida (TUS), Issei Watanabe, Yoshimi Yamashita, Akira Endoh, Shinsuke Hara, Akifumi Kasamatsu (NICT) ED2017-81
Quantum corrected Monte Carlo simulation shows that the InSb HEMT exhibits intrinsic fT more than 1 THz from Vds of arou... [more] ED2017-81
pp.33-36
RCS, NS
(Joint)
2017-12-15
15:10
Hiroshima Aster Plaza Mobility Evaluation of Massive MIMO with Linear/Nonlinear Precoding Based on SINR Heatmap in a Serving Cell
Hiroshi Nishimoto, Akinori Taira, Shigeru Uchida, Akihiro Okazaki, Atsushi Okamura (Mitsubishi Electric Corp.) RCS2017-267
Multiuser multiple-input multiple-output (MU-MIMO) over massive MIMO is one of the key enablers in the fifth generation ... [more] RCS2017-267
pp.95-100
SDM, ED, CPM 2017-05-26
10:45
Aichi VBL, Nagoya University N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE
Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] ED2017-26 CPM2017-12 SDM2017-20
pp.59-64
RCS, SR, SRW
(Joint)
2017-03-02
11:15
Tokyo Tokyo Institute of Technology Performance Evaluation of Antenna Configuration by Indoor and Outdoor Propagation Experimental Results for 5G Ultra High-Density Distributed Antenna System in Low SHF Bands
Tatsuki Okuyama, Satoshi Suyama, Jun Mashino, Yukihiko Okumura (NTT DOCOMO), Kotaro Shiizaki, Chiyoshi Akiyama (FUJITSU LABS), Masafumi Tsutsui, Hiroyuki Seki, Moriiko Minowa (FUJITSU) RCS2016-311
In order to tackle rapidly increasing traffic, distributed Massive MIMO (DM-MIMO) has been proposed for fifth-generation... [more] RCS2016-311
pp.133-138
RCS, SR, SRW
(Joint)
2017-03-02
11:40
Tokyo Tokyo Institute of Technology Experimental Study of High-Capacity Technologies for 5G Ultra High-Density Distributed Antenna Systems -- Performance Evaluation of UE mobility for Wideband Coordinated MU-MIMO in Field Experiment --
Kotaro Shiizaki, Chiyoshi Akiyama (FUJITSU LABORATORIES), Masafumi Tsutsui, Takashi Dateki, Hiroyuki Seki, Morihiko Minowa (FUJITSU), Tatsuki Okuyama, Jun Mashino, Satoshi Suyama, Yukihiko Okumura (NTT DOCOMO) RCS2016-312
In 5G mobile communication systems, an effective high-capacity technology is expected by using high-density small cells.... [more] RCS2016-312
pp.139-144
MW, ED 2017-01-27
14:25
Tokyo Kikai-Shinko-Kaikan Bldg. C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network
Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric) ED2016-110 MW2016-186
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Cir... [more] ED2016-110 MW2016-186
pp.75-79
CPM, LQE, ED 2016-12-12
15:45
Kyoto Kyoto University Normally-off operation of planar GaN MOS-HFET
Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79
Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with ... [more] ED2016-63 CPM2016-96 LQE2016-79
pp.31-34
RCS 2016-06-23
14:25
Okinawa Univ. of the Ryukyus Indoor Experiment on 5G Radio Access Using Beam Tracking at 15 GHz Band
Kiichi Tateishi, Daisuke Kurita, Atsushi Harada, Yoshihisa Kishiyama (NTT DOCOMO) RCS2016-69
In order to rapidly increasing traffic, 5G radio access network in mobile communications introduces higher frequency ban... [more] RCS2016-69
pp.135-140
RCS, IT, SIP 2016-01-18
11:50
Osaka Kwansei Gakuin Univ. Osaka Umeda Campus Performance Analysis for Single-Carrier Space-Time Block Coding Diversity in a High Mobility Environment
Hiroyuki Miyazaki, Fumiyuki Adachi (Tohoku. Univ.) IT2015-57 SIP2015-71 RCS2015-289
Recently, we proposed a robust frequency-domain equalization (FDE) suitable for single-carrier (SC) space-time block cod... [more] IT2015-57 SIP2015-71 RCS2015-289
pp.55-60
SDM 2015-11-06
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] GaN-based devices on Si substrates for power conversion systems
Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda (Panasonic) SDM2015-90
GaN-based power devices have been expected to overcome the performance limit of conventional Si-based devices and enable... [more] SDM2015-90
pp.35-38
ED 2015-07-25
10:40
Ishikawa IT Business Plaza Musashi 5F Fabrication of InGaAs channel multi-gate MOSFET’s with MOVPE regrown source/drain
Haruki Kinoshita, Seiko Netsu, Yuichi Mishima, Toru Kanazawa, Yasuyuki Miyamoto (Tokyo Tech) ED2015-44
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] ED2015-44
pp.39-44
EMD, CPM, OME 2015-06-19
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. Effect of the insertion of N2O added buffer layer on the characteristics of ZnO films grow on glass substrates by catalytic reaction assisted chemical vapor deposition
Shingo Kanouchi, Yuki Ishizuka, Yuki Ohashi (Nagaoka Univ. technol.), Koichiro Oishi, Hironori Katagiri (Nagaoka Nat. Coll. Technol.), Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. technol.) EMD2015-15 CPM2015-25 OME2015-28
Aiming at the growth of high-quality ZnO films on glass substrates by a new CVD method using a catalytic reaction, effec... [more] EMD2015-15 CPM2015-25 OME2015-28
pp.23-27
SDM 2015-06-19
15:15
Aichi VBL, Nagoya Univ. Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method
Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] SDM2015-51
pp.69-73
MWP 2015-05-25
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. Increase in sensitivity and bandwidth measurement of terahertz detector using high electron mobility transistor
Safumi Suzuki, Takuro Nukariya, Yugo Ueda, Tomohiro Ootsuka, Masahiro Asada (Tokyo Tech) MWP2015-1
We propose and fabricated a high-electron-mobility-transistor (HEMT) terahertz detector integrated with bow-tie antenna ... [more] MWP2015-1
pp.1-5
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