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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MW | 2024-01-25 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Electron State Analysis under Al2O3 Gate Oxide film in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Akira Kiyoi, Takashi Imazawa, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (Nagoya Inst. of Tech)  ED2023-68 MW2023-160 |
(To be available after the conference date) [more] | ED2023-68 MW2023-160 pp.11-14 |
| MW, ED | 2023-01-27 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152 |
(To be available after the conference date) [more] | ED2022-93 MW2022-152 pp.36-39 |
| OME, IEE-DEI | 2023-01-18 13:40 |
Aichi | Aichi Himaka island ホテル浦島 | [Invited Lecture]
Interface potential distribution in GaN-HEMT using Laser Terahertz Emission Microscope Noriyuki Takada (AIST) OME2022-63 |
Laser Terahertz Emission Microscopy (LTEM) can observe electric field/charge transfer by detecting THz waves emitted due... [more] | OME2022-63 pp.1-3 |
| ED, CPM, LQE | 2021-11-26 15:20 |
Online | Online | Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template Ryuichi Mori, Kenjiro Uesugi, Shegeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2021-33 CPM2021-67 LQE2021-45 |
$Al_{0.85}Ga_{0.15}N$/$Al_{0.60}Ga_{0.40}N$ HEMT structures with channel thicknesses of 100–1000 nm were grown on low-di... [more] | ED2021-33 CPM2021-67 LQE2021-45 pp.83-86 |
| SDM | 2021-11-12 11:30 |
Online | Online | [Invited Talk]
Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu) SDM2021-62 |
A cellular automaton method is applied to temperature-dependent mobility modeling of GaN HEMT. The method utilizes numer... [more] | SDM2021-62 pp.47-52 |
| LQE, CPM, ED | 2020-11-26 15:00 |
Online | Online | Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor Tatsuya Shirato, Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2020-11 CPM2020-32 LQE2020-62 |
We investigated the effect of carrier gas on GaN surface morphology. Bunched step-and-terrace structures and pits were f... [more] | ED2020-11 CPM2020-32 LQE2020-62 pp.41-44 |
| ED | 2013-12-17 14:10 |
Miyagi | Research Institute of Electrical Communication Tohoku University | Ultrahigh Sensitive and Frequency-Tunable Terahertz Detection by Asymmetric Dual-Grating-Gate HEMTs Tetsuya Kawasaki, Shinya Hatakeyama, Yuki Kurita (Tohoku Univ.), Guillaume Ducournau (IEMN), Dominique Coquillat (Univ. Montpellier 2 & CNRS), Kengo Kobayashi, Akira Satou (Tohoku Univ.), Yahya M. Meziani (Univ. Salamanca), Vyacheslav. V. Popov (Kotelnikov Inst. Radio Eng. Electron), Wojciech Knap (Univ. Montpellier 2 & CNRS), Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2013-107 |
We report on ultrahigh sensitive and frequency-tunable terahertz (THz) detectors by our original asymmetric dual-grating... [more] | ED2013-107 pp.97-100 |
| ED | 2011-12-15 10:05 |
Miyagi | Tohoku University | Ultrahigh Sensitive Plasmonic Terahertz Detector Based on Asymmetric Dual-Grating Gate InAlAs/InGaAs/InP HEMT Yudai Tanimoto, Stephane Boubanga-Tombet, Takayuki Watanabe (Tohoku Univ.), Yuye Wang, Hiroaki Minamide, Hiromasa Ito (RIKEN), Denis Fateev, Vyacheslav Popov (RAS), Dominique Coquillat, Wojciech Knap (Univ. Montpellie 2), Taiichi Otsuji (Tohoku Univ.) ED2011-110 |
We report on design fabrication and characterization of ultrahigh sensitive terahertz detectors based on asymmetric doub... [more] | ED2011-110 pp.57-61 |
| LQE, ED, CPM | 2011-11-17 13:45 |
Kyoto | Katsura Hall，Kyoto Univ. | Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2011-79 CPM2011-128 LQE2011-102 |
This paper describes the temperature dependent two dimensional electron gas (2DEG) properties in AlInN/AlN/GaN heterostr... [more] | ED2011-79 CPM2011-128 LQE2011-102 pp.29-33 |
| ED, SDM | 2010-07-02 16:15 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.) ED2010-122 SDM2010-123 |
The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important... [more] | ED2010-122 SDM2010-123 pp.319-324 |
| LQE, ED, CPM | 2008-11-28 15:45 |
Aichi | Nagoya Institute of Technology | Simulation of Bending Deformation and Two-dimensional Electron Gas Density in AlGaN/GaN Hetero Structure Hajime Tsukahara, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan univ.) ED2008-182 CPM2008-131 LQE2008-126 |
We have examined the effect on a two-dimensional electron gas(2DEG) in AlGaN/GaN hetero structures by using the “micro-o... [more] | ED2008-182 CPM2008-131 LQE2008-126 pp.149-154 |
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