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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| QIT (2nd) |
2022-12-09 16:00 |
Kanagawa | Keio Univ. (Primary: On-site, Secondary: Online) |
A new information criterion for quantum state estimation Hiroshi Yano, Naoki Yamamoto (Keio Univ.) |
Recently a number of efficient methods for quantum state estimation have been proposed, demanding methods for accurate s... [more] | |
| ED | 2015-07-24 15:35 |
Ishikawa | IT Business Plaza Musashi 5F | Electrical properties of SiC MOSFETs with various substrate impurity concentrations Hiroshi Yano (NAIST/Univ. Tsukuba), Hiroto Yuki, Takashi Fuyuki (NAIST)  ED2015-41 |
We have investigated electrical properties of n-channel MOSFETs fabricated on Si-face 4H-SiC with various substrate impu... [more] | ED2015-41 pp.25-29 |
| SDM, EID | 2014-12-12 16:15 |
Kyoto | Kyoto University | Frequency dependence of Split C-V characteristics in Si-face 4H-SiC n-MOSFETs Hiroto Yuki (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba) EID2014-33 SDM2014-128 |
Interface properties in 4H-SiC n-MOSFETs on Si-face were characterized by using split C-V method in the frequency range ... [more] | EID2014-33 SDM2014-128 pp.103-107 |
| SDM, EID | 2014-12-12 16:30 |
Kyoto | Kyoto University | Interface Characterization of 4H-SiC MOSFETs by Single Pulse Id-Vgs Measurements Kosuke Isono (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba) EID2014-34 SDM2014-129 |
SiC MOSFETs have suffered from issues such as threshold voltage instability and low channel mobility due to high interfa... [more] | EID2014-34 SDM2014-129 pp.109-113 |
| SDM | 2013-12-13 10:00 |
Nara | NAIST | Silicon nanowire growth by vapor liquid solid mode using indium dots Keigo Fukunaga, Tomoaki Hatayama, Hiroshi Yano, Naofumi Okamoto, Ayumi Tani, Yasuaki Ishikawa, Takashi Fuyuki (NAIST) SDM2013-119 |
A silicon nanowire (Si-NW) structure is one of the key structures to improve conversion efficiency in silicon solar cell... [more] | SDM2013-119 pp.19-23 |
| SDM | 2013-12-13 17:00 |
Nara | NAIST | A Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3- and NO-Annealed Gate Oxides Natsuko Kanafuji, Hiroshi Yano, Ai Osawa, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-132 |
4H-SiC MOSFETs are expected as low loss power devices with high blocking voltage. Threshold voltage instability is one o... [more] | SDM2013-132 pp.97-100 |
| SDM | 2013-12-13 17:40 |
Nara | NAIST | Structural Change of Silicon Carbide Surface Etched by Chlorine-Trifluoride Ryota Hori, Tomoaki Hatayama, Hiroshi Yano, Takashi Fuyuki (NAIST) SDM2013-134 |
Silicon carbide surface with 4°-off toward <11-20> was chemically etched by chlorine-trifluoride gas without plasma. The... [more] | SDM2013-134 pp.107-112 |
| SDM | 2013-06-18 15:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
High performance of SiC-MOS devices by POCl3 annealing Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-58 |
Effects of phosphorus incorporation by POCl3 annealing on electrical properties of 4H-SiC MOS devices were investigated.... [more] | SDM2013-58 pp.71-76 |
| SDM | 2012-12-07 10:15 |
Kyoto | Kyoto Univ. (Katsura) | Plasmaless etching of silicon carbide using chlorine based gas Tomoaki Hatayama, Ryouta Hori, Tetsuya Tamura, Hiroshi Yano, Takashi Fuyuki (NAIST) SDM2012-116 |
Silicon carbide (SiC) could be etched by a plasmaless process in chlorine based ambient over 900oC. The etch pits were f... [more] | SDM2012-116 pp.7-12 |
| SDM | 2012-12-07 10:45 |
Kyoto | Kyoto Univ. (Katsura) | Effects of phosphorus incorporation into SiO2/SiC interface on electrical properties of MOS capacitors fabricated on 4H-SiC(11-20) Nao Umezawa, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2012-118 |
We have already reported that the interface state density of MOS capacitors on n-type 4H-SiC (0001) and (000-1) faces ca... [more] | SDM2012-118 pp.19-23 |
| SDM | 2011-12-16 10:40 |
Nara | NAIST | Effects of POCl3 Annealing on SiO2/p-type 4H-SiC Interface properties Toshimitsu Takaue, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2011-134 |
We have already reported that the interface state density for n-type 4H-SiC MOS structures can be greatly reduced by POC... [more] | SDM2011-134 pp.11-15 |
| SDM | 2009-12-04 09:40 |
Nara | NAIST | Reduction of interface state density in 4H-SiC MOS interface by incorporation of phosphorus atoms Dai Okamoto, Hiroshi Yano, Kenji Hirata, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2009-152 |
A change in the interface state density in 4H-SiC metal-oxide-semiconductor (MOS) structures by incorporation of various... [more] | SDM2009-152 pp.5-10 |
| SDM | 2008-12-05 13:50 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxide Hiroyuki Irifune, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (Nara Institute ofScience and Tecnology) SDM2008-189 |
So far, we have already developed floating gate memory devices using bio-nano-dot (BND). In this study, we fabricated an... [more] | SDM2008-189 pp.27-30 |
| SDM | 2008-12-05 14:10 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Electrical properties of 4H-SiC MOS devices fabricated on C-face with NO direct oxidation Yuki Oshiro, Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Institute of Science and Technology) SDM2008-190 |
[more] | SDM2008-190 pp.31-35 |
| SDM, OME | 2008-04-11 14:05 |
Okinawa | Okinawa Seinen Kaikan | Degradation of Ga2o3-In2O3-Zno(GIZO) Thin Film Transistors Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ji Sim Jung, Jang Yeon Kwon (Sumsung Advenced Institute of Technology) SDM2008-10 OME2008-10 |
We have investigated a degradation of Ga2O3-In2O3-ZnO（GIZO）thin film transistor under DC stress. For a positive gate bia... [more] | SDM2008-10 OME2008-10 pp.47-50 |
| SDM | 2007-12-14 11:40 |
Nara | Nara Institute Science and Technology | Charge-Discharge Characteristics of Bio-Nano Dot Floating Gate MOS Devices with Ultrathin Tunnnel Oxide Tomoki Umeda, Hiroshi Yano, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (NAIST,Matsushita Electric Industrial Co.) |
[more] | |
| SDM | 2007-12-14 16:40 |
Nara | Nara Institute Science and Technology | Charge-Pumping Measurement on 4H-SiC nMOSFETs and pMOSFETs Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Inst. Sci. Tech.) SDM2007-234 |
Charge-pumping measurements were conducted on n-channel and p-channel 4H-SiC MOSFET’s with and without NO annealing. The... [more] | SDM2007-234 pp.51-54 |
| ED | 2007-06-15 13:00 |
Toyama | Toyama Univ. | 0.10 um Ion-Implanted GaAs MESFETs with Low Cost Production Process Masataka Watanabe, Daiji Fukushi, Hiroshi Yano, Shigeru Nakajima (Eudyna Devices) ED2007-31 |
We have successfully fabricated 0.1 µm gate GaAs MESFETs using a low cost process. The result was obtained from op... [more] | ED2007-31 pp.1-5 |
| SDM | 2007-06-07 16:45 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Effects of High-Pressure H2O Vapor annealing on SiO2/4H-SiC Interface Properties and MOSFET Performance Hiroshi Yano, Daisuke Takeda, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST) SDM2007-38 |
High-pressure H2O vapor annealing was performed for 4H-SiC MOS structures to modify interface properties and MOSFET perf... [more] | SDM2007-38 pp.37-42 |
| PRMU | 2005-10-27 16:00 |
Miyagi | Tohoku Univ. | [Special Talk]
English title unknown Junichi Sakaki (Matsushita Electric), Shizuo Sakamoto (NEC), Hiroshi Yano (Omuron), Osamu Kanda (Matsushita Electric), Morito Shiohara (Fujitsu Lab), Hiroshi Sukegawa (Toshiba), Yoshiaki Isobe (Hitachi), Satoshi Haruyama (NTT Data), Shinichi Murata (OKI), Masahiro Yoshizawa (NTT), Seiji Hirano (Toppan Printing), Hideki Murota (Dai Nippon Printing), Satoshi Seto (Fujifilm), Koji Matsunaka (Konica Minolta), Manabu Yamakoshi (National Printing Bureau) |
[more] | PRMU2005-92 pp.51-56 |
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