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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2011-10-21
09:50
Miyagi Tohoku Univ. (Niche) Channel strain measurements in 32nm-node CMOSFETs
Munehisa Takei, Hiroki Hashiguchi, Takuya Yamaguchi, Daisuke Kosemura, Kohki Nagata, Atsushi Ogura (Meiji Univ.) SDM2011-104
We performed strain analyses for 32-nm-node MPU by Raman measurements in conjunction with TEM observation. The channel s... [more] SDM2011-104
pp.43-48
SDM 2010-10-21
14:00
Miyagi Tohoku University [Invited Talk] Channel strain evaluation for advanced LSI
Atsushi Ogura, Daisuke Kosemura, Munehisa Takei, Motohiro Tomita (Meiji Univ.) SDM2010-152
 [more] SDM2010-152
pp.1-6
SDM 2010-10-21
15:00
Miyagi Tohoku University Stress Tensor Measurements using Raman Spectroscopy with High-NA Oil-Immersion Lens
Daisuke Kosemura, Atsushi Ogura (Meiji Univ.) SDM2010-153
Raman spectroscopy allows us to precisely evaluate stress with relatively high-spatial resolution and non-destructively.... [more] SDM2010-153
pp.7-12
SDM 2010-10-22
16:20
Miyagi Tohoku University Strain evaluation in Si at atomically flat SiO2/Si interface
Maki Hattori (Meiji Univ.), Daisuke Kosemura (Meiji Univ./JSPS), Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Motohiro Tomita, Yuuki Mizukami, Yuuki Hashiguchi, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe), Tomoyuki Koganezawa (JASRI) SDM2010-170
We performed Raman spectroscopy and in-plane XRD measurement to clarify the structure and strain in Si at and near an at... [more] SDM2010-170
pp.71-75
SDM 2008-06-10
09:30
Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo Transconductance enhancement of strained-Si nanowire FETs
Aya Seike, Tomoyuki Tange, Itsutaku Sano, Yuuki Sugiura, Ikushin Tsuchida, Hiromichi Ohta, Takanobu Watanabe (Waseda Univ.), Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Iwao Ohdomari (Waseda Univ.) SDM2008-48
We have demonstrated improved performance for Si nanowire FETs for CMOS operation by introducing tensile stress into the... [more] SDM2008-48
pp.35-39
SDM, OME 2008-04-11
11:25
Okinawa Okinawa Seinen Kaikan Evaluation of stress and crystallinity of laser crystallization polysilicon thin film using UV/Visible Raman spectroscopy
Yasuto Kakemura, Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Takashi Noguchi (Univ. of the Ryukyus) SDM2008-6 OME2008-6
Low temperature polysilicon (LTPS) thin film is a key material for the systems-on-glass achievement. Depth and in-plane ... [more] SDM2008-6 OME2008-6
pp.27-32
 Results 1 - 6 of 6  /   
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