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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 120  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW 2024-03-01
14:05
Okayama Okayama Prefectural University
(Primary: On-site, Secondary: Online)
[Special Talk] An Analytical Design Method of Wideband Combiner for Handset Doherty Amplifier
Shohei Imai, Hiroshi Okabe (Murata) MW2023-194
The development of handset Doherty power amplifier (DPA) is currently focused on achieving high data rates and low power... [more] MW2023-194
pp.99-103
SDM 2024-01-31
12:35
Tokyo KIT Toranomon Graduate School
(Primary: On-site, Secondary: Online)
[Invited Talk] Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs
Hiroshi Oka (AIST) SDM2023-74
Toward large-scale quantum computers, cryogenic CMOS circuits have been developed to control and readout the qubits insi... [more] SDM2023-74
pp.1-4
SCE 2024-01-23
15:25
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
[Invited Talk] Development of semiconductor qubit simulator based on TCAD technology
Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST)
 [more]
SDM 2023-11-09
15:55
Tokyo
(Primary: On-site, Secondary: Online)
[Invited Talk] Development of Quantum Device Simulator toward Large-Scale Integration of Silicon Qubits
Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST) SDM2023-67
 [more] SDM2023-67
pp.20-25
SDM 2023-11-10
13:10
Tokyo
(Primary: On-site, Secondary: Online)
[Invited Talk] Noies Source of MOSFETs Operating at Cryogenic Temperature
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-70
There is increasing demand for the development of classic integrated circuits to control qubits for quantum computers. F... [more] SDM2023-70
p.35
SDM, ICD, ITE-IST [detail] 2023-08-01
15:25
Hokkaido Hokkaido Univ. Multimedia Education Bldg. 3F
(Primary: On-site, Secondary: Online)
[Invited Talk] Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-40 ICD2023-19
The assignment of low-frequency noise sources in the cryogenic operation of MOSFET is of great importance because of the... [more] SDM2023-40 ICD2023-19
pp.22-27
SDM, ICD, ITE-IST [detail] 2023-08-01
16:10
Hokkaido Hokkaido Univ. Multimedia Education Bldg. 3F
(Primary: On-site, Secondary: Online)
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs
Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-41 ICD2023-20
Cryo-CMOS technology is highly demanded to realize control circuits of large-scale quantum computers, which control and ... [more] SDM2023-41 ICD2023-20
pp.28-31
SDM, ICD, ITE-IST [detail] 2023-08-01
16:35
Hokkaido Hokkaido Univ. Multimedia Education Bldg. 3F
(Primary: On-site, Secondary: Online)
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs
Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) SDM2023-42 ICD2023-21
In this paper, we report the results of our ongoing analysis of a peculiar phenomenon in 200 nm SOI MOSFETs, which occur... [more] SDM2023-42 ICD2023-21
pp.32-35
SDM 2023-06-26
10:50
Hiroshima Hiroshima Univ. (Res. Inst. of Nanodevices) [Memorial Lecture] Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic-MOSFET Operation
Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-28
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale-in... [more] SDM2023-28
pp.5-6
CPM, ED, SDM 2023-05-19
16:55
Aichi Nagoya Institute of Technology
(Primary: On-site, Secondary: Online)
Study of device isolation technology of AlGaN/GaN high-electron-mobility transistors for their integration
Tatsuya Akamatsu, Yoshiki Akira, Hiroshi Okada (TUT) ED2023-8 CPM2023-8 SDM2023-25
 [more] ED2023-8 CPM2023-8 SDM2023-25
pp.32-35
IN, NS
(Joint)
2023-03-02
14:20
Okinawa Okinawa Convention Centre + Online
(Primary: On-site, Secondary: Online)
Research on Dielectric Waveguides for Enhancing Spatial Resolution in Beyond 5G High Frequency Communications
Reishi Mitani (The Univ. of Tokyo), Atsushi Fukuda, Hiroto Yamamoto, Hiroshi Okazaki, Yasunori Suzuki (NTT DOCOMO), Akihiro Nakao (The Univ. of Tokyo) NS2022-191
High-frequency communications, which are used in 5G and expected to be Beyond5G, enable high-capacity communicationsbyus... [more] NS2022-191
pp.139-144
MW 2022-12-15
14:35
Mie Jingu-Kaikan(Ise)
(Primary: On-site, Secondary: Online)
A Study of Sub-THz Band Transmitter Configuration for 6G Mobile Communication System
Yasunori Suzuki, Hiroshi Okazaki, Satoshi Suyama (NTT DOCOMO) MW2022-134
This paper presents a sub-THz band transmitter configuration for six-generation mobile communication system. First, we i... [more] MW2022-134
pp.16-21
SDM 2022-11-11
13:00
Online Online [Invited Talk] Understanding of Electron Mobility Limiting Factor in Cryo-CMOS
Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-74
To realize highly-integrated quantum computers, the Cryo-CMOS circuit has attracted significant attention for control/re... [more] SDM2022-74
p.49
ICD, SDM, ITE-IST [detail] 2022-08-09
11:05
Online   [Invited Talk] Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation
Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-46 ICD2022-14
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale qu... [more] SDM2022-46 ICD2022-14
pp.54-59
ICD, SDM, ITE-IST [detail] 2022-08-09
11:50
Online   TCAD analysis of threshold voltage increase of short-channel MOSFET in cryogenic operation
Hidehiro Asai, Takumi Inaba, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Takahiro Mori (AIST) SDM2022-47 ICD2022-15
 [more] SDM2022-47 ICD2022-15
pp.60-63
SDM, ED, CPM 2022-05-27
17:30
Online Online Study on TiAl-based ohmic electrodes on AlGaN/GaN heterostructures
Mao Fukinaka, Yoshiki Akira, Hiroshi Okada (TUT) ED2022-16 CPM2022-10 SDM2022-23
 [more] ED2022-16 CPM2022-10 SDM2022-23
pp.39-42
MW 2022-05-19
15:00
Kyoto Kyoto Univ.
(Primary: On-site, Secondary: Online)
[Invited Talk] Envelope Tracking Power Amplifiers for 4G/5G mobile handset application
Kenji Mukai, Hiroshi Okabe, Satoshi Tanaka (Murata) MW2022-13
 [more] MW2022-13
p.1
MW 2022-03-03
14:45
Online Online Frequency Characteristics on Vector Regulator Adjustment of Power Amplifier for Massive MIMO Base Stations
Kazuya Miyamoto, Shoichi Narahashi (Setsunan Univ.), Yasunori Suzuki, Hiroshi Okazaki (NTT DOCOMO) MW2021-123
This paper presents Frequency Characteristics on Vector Regulator Adjustment of 3.5-GHz Band Power Amplifier. Experiment... [more] MW2021-123
pp.69-72
MW 2022-03-04
09:20
Online Online A study of diode linearizer for 100 GHz amplifier toward 6G
Sumire Aoki, Hiroshi Hamada, Hiroto Yamamoto, Atsushi Fukuda (NTT DOCOMO), Jyo Teruo, Hiroyuki Takahashi (NTT), Hiroshi Okazaki, Yasunori Suzuki (NTT DOCOMO) MW2021-129
Sub-THz band (frequency range above 100 GHz) are gathering attention to implement 6G high-speed wireless communications.... [more] MW2021-129
pp.100-104
MW 2021-11-19
13:55
Kagoshima Kagoshima University
(Primary: On-site, Secondary: Online)
A Study on Coverage Extension by a Leaky Dielectric Waveguide with Dielectric Pieces Attached
Hiroto Yamamoto, Atsushi Fukuda, Hiroshi Okazaki, Yasunori Suzuki (NTT DOCOMO) MW2021-81
This paper presents an experimental study of coverage extension by a leaky dielectric waveguide that leaks radio waves f... [more] MW2021-81
pp.81-85
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