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All Technical Committee Conferences (Searched in: Recent 10 Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SCE | 2024-01-23 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of semiconductor qubit simulator based on TCAD technology Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST) |
[more] | |
| SDM | 2023-11-09 15:55 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of Quantum Device Simulator toward Large-Scale Integration of Silicon Qubits Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST)  SDM2023-67 |
[more] | SDM2023-67 pp.20-25 |
| SDM | 2023-11-10 13:10 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Noies Source of MOSFETs Operating at Cryogenic Temperature Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-70 |
There is increasing demand for the development of classic integrated circuits to control qubits for quantum computers. F... [more] | SDM2023-70 p.35 |
| SDM, ICD, ITE-IST [detail] | 2023-08-01 15:25 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
[Invited Talk]
Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-40 ICD2023-19 |
The assignment of low-frequency noise sources in the cryogenic operation of MOSFET is of great importance because of the... [more] | SDM2023-40 ICD2023-19 pp.22-27 |
| ICD, SDM, ITE-IST [detail] | 2022-08-09 11:50 |
Online | TCAD analysis of threshold voltage increase of short-channel MOSFET in cryogenic operation Hidehiro Asai, Takumi Inaba, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Takahiro Mori (AIST) SDM2022-47 ICD2022-15 |
[more] | SDM2022-47 ICD2022-15 pp.60-63 |
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| SDM | 2021-11-12 11:30 |
Online | Online | [Invited Talk]
Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu) SDM2021-62 |
A cellular automaton method is applied to temperature-dependent mobility modeling of GaN HEMT. The method utilizes numer... [more] | SDM2021-62 pp.47-52 |
| SDM, ICD, ITE-IST [detail] | 2021-08-17 10:15 |
Online | Online | [Invited Talk]
Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori (AIST) SDM2021-30 ICD2021-1 |
We propose a buried nanomagnet (BNM) realizing high-speed/low-variability silicon spin qubit operation, inspired by buri... [more] | SDM2021-30 ICD2021-1 pp.1-6 |
| SDM | 2020-11-20 16:40 |
Online | Online | [Invited Talk]
TCAD simulation for atomic layer channel Tunnel FETs based on ab-initio band calculation Hiderhiro Asai (AIST), Tatsuya Kuroda (Osaka Univ.), Koichi Fukuda, Junichi Attori, Tsutomu Ikegami (AIST), Nobuya Mori (Osaka Univ.) SDM2020-34 |
[more] | SDM2020-34 pp.58-62 |
| SDM | 2019-11-08 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2019-74 |
We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials i... [more] | SDM2019-74 pp.27-32 |
| SDM | 2019-01-29 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81 |
In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more] | SDM2018-81 pp.1-4 |
| SDM | 2018-11-09 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74 |
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] | SDM2018-74 pp.47-52 |
| SDM | 2018-01-30 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Perspective of Negative Capacitance FinFETs Investigated by Transient TCAD Simulation Hiroyuki Ota, Shinji Mgita, Tsutomu Ikegami, Junichi Hattori, Hidehiro Asai, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2017-91 |
[more] | SDM2017-91 pp.1-4 |
| SDM | 2017-11-09 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
GaN MOS capacitance simulation considering deep traps Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu (AIST), Tamotsu Hashizume (Hokkaido Univ.) SDM2017-66 |
Transient mode device simulation is applied to obtain capacitances of GaN MOS capacitors including deep level traps, and... [more] | SDM2017-66 pp.27-32 |
| SDM, ICD, ITE-IST [detail] | 2017-07-31 12:00 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. | TCAD Simulation of C-TFET Circuit with Drain Offset Structure Hidehiro Asai, Takahiro Mori, Junich Hattori, Koichi Fukuda, Kazuhiko Endo, Takashi Matsukawa (AIST) SDM2017-35 ICD2017-23 |
We have performed TCAD simulation for a ring oscillator composed of complementary Tunnel Field Effect Transistors (C-TFE... [more] | SDM2017-35 ICD2017-23 pp.21-24 |
| SDM | 2017-02-06 13:35 |
Tokyo | Tokyo Univ. | [Invited Talk]
Electrical coupling of stacked transistors in monolithic three-dimensional inverters and its dependence on the interlayer dielectric thickness Junichi Hattori, Koichi Fukuda, Toshifumi Irisawa, Hiroyuki Ota, Tatsuro Maeda (AIST) SDM2016-143 |
We study the electrical coupling of stacked transistors in monolithic three-dimensional (3D) inverters and investigate i... [more] | SDM2016-143 pp.23-28 |
| SDM | 2017-01-30 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST) SDM2016-130 |
We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by us... [more] | SDM2016-130 pp.1-4 |
| SDM | 2017-01-30 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Fully Coupled 3-D Device Simulation of Negative Capacitance FinFETs for Sub 10 nm Integration Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-133 |
Subthreshold operation of negative capacitance FinFETs (NC-FinFETs) at sub 10 nm gate length are analyzed with a newly d... [more] | SDM2016-133 pp.13-16 |
| SDM | 2016-06-29 10:40 |
Tokyo | Campus Innovation Center Tokyo | [Invited Lecture]
Design of SOI-FETs for Steep Slope Switching using Negative Capacitance in Ferroelectric Gate Insulators Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-34 |
This paper discusses a design of fully depleted silicon-on-insulator field-effect transistors with ferroelectric gate in... [more] | SDM2016-34 pp.9-13 |
| SDM | 2016-01-28 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Understanding of BTI for Tunnel FETs Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo (AIST) SDM2015-122 |
(To be available after the conference date) [more] | SDM2015-122 pp.9-12 |
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