IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 15 of 15  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2009-10-30
09:00
Toyama Toyama Prefectural University Structural evaluation of Ge, SiC nanodots formed on Si based on hemispherical-dot model
Tomoyoshi Kuroda, Takashi Otani, Ariyuki Kato, Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-96
Surface structure and surface composition of Ge and SiC nanodot-fabricated surface on Si(001) substrates using monomethy... [more] CPM2009-96
pp.31-36
CPM 2009-10-30
09:25
Toyama Toyama Prefectural University Lowering of the AZO film resisitivity by hydrogen radical annealing
Yutaka Ohshima, Masami Tahara, Mohd Hanif (Nagaoka Univ. of Tech.), Hironori Katagiri, Kazuo Jinbo (Nagaoka National College of Tech.), Yuichiro Kuroki, Masasuke Takata, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-97
Al doped ZnO (AZO) films has been deposited by a radio frequency (rf) magnetron sputtering with a third electrode. The
... [more]
CPM2009-97
pp.37-41
CPM 2009-08-11
11:40
Aomori Hirosaki Univ. Epitaxial growth of gallium nitride on Si by hot-mesh CVD method with intermittent gas supplies.
Takeshi Saitou, Kazuki Nagata (Nagaoka Univ. of Tech.), Maki Suemitsu, Tetsuo Endoh (RIEC Tohoku Univ.), Takashi Ito (CIR Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-45
Hot-mesh CVD with various gas supply modes for the epitaxial growth of gallium nitride (GaN) on Si was investigated for ... [more] CPM2009-45
pp.61-66
OME 2008-11-07
16:40
Nagano Seiko Epson Hydrogen Gas Sensor using Multi-wall Carbon Nanotube
Akira Kawamoto (Fukui Nat. Col. Tech.), Yoshiaki Murakami (NITTO SHINKO Co.), Tomoichiro Okamoto, Masasuke Takata (Nagaoka U. Tech.) OME2008-66
The mixture of the poly methyl methacrylate (PMMA), multi-wall carbon nanotube (MWNT) and methyl ethyl ketone( MEK) were... [more] OME2008-66
pp.45-49
CPM 2008-10-30
13:25
Niigata Niigata Univ. Epitaxial growth of III-V nitride semiconductor films by pulse-mode hot-mesh CVD
Yasuaki Komae, Takeshi Saitou (Nagaoka Univ of Tech), Maki Suemitsu, Takashi Ito, Tetsuo Endoh (CIR of Tohoku Univ), Hideki Nakazawa (FST of Hirosaki Univ), Yuzuru Narita (Kyushu Inst. of Tech.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ of Tech) CPM2008-76
Intermittent gas supplies in hot-mesh CVD for the epitaxial growth of gallium nitride (GaN) were investigated for the im... [more] CPM2008-76
pp.7-12
CPM 2008-10-30
13:50
Niigata Niigata Univ. Optical properties of Ge nanodots capped by wide gap semiconductors
Haruki Suto, Tomoyoshi Kuroda, Ariyuki Kato, Hiroshi Nishiyama, Yasunobu Inoue, Tadashi Akahane, Masasuke Takata, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2008-77
Surface structure and surface composition of Ge and SiC nanodot-fabricated surface on a Si(001) substrate using monometh... [more] CPM2008-77
pp.13-18
CPM 2008-10-30
14:30
Niigata Niigata Univ. Lowering the resistivity of Al dope ZnO films deposited by a magnetron sputtering with a third electrode
Yutaka Oshima, Yuichiro Makino (nagaoka Univ. of Tech.), Hironori Katagiri, Kazuo Jinbo (Nagaoka National College of Tech,), Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (nagaoka Univ. of Tech.) CPM2008-78
Improvement of the uniformity in the resistivity of Al doped ZnO (AZO) films has been obtained using a radio frequency (... [more] CPM2008-78
pp.19-22
CPM 2007-11-16
14:20
Niigata Nagaoka University of Technology Evaluation of the uniformity in the properties of ZnO transparent conductive films grown by rf magnetron sputtering with a grid electrode
Akira Asano (NUT), Hironori Katagiri (NNCT), Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (NUT) CPM2007-108
We have investigated the deposition of Al doped ZnO (AZO) films using a radio frequency (rf) magnetron sputtering appara... [more] CPM2007-108
pp.19-22
CPM 2007-11-17
09:00
Niigata Nagaoka University of Technology Growth of GaN by hot-mesh CVD -- Effect of Ru coated W mesh --
Yusuke Fukada, Kazuki Abe, Yuichiro Kuroki (Nagaoka Univ. Tech.), Maki Suemitsu, Takashi Ito (CIR. Tohoku Univ.), Yuzuru Narita (Kyusyu Inst. Tech.), Tetsuo Endoh (RIEC, Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ. Tech.) CPM2007-115
 [more] CPM2007-115
pp.55-58
CPM 2007-11-17
09:25
Niigata Nagaoka University of Technology Formation and control of Ge, SiC nanodots on Si(001)-2x1 surface using monomethylgermane
Tomoaki Ogiwara, Haruki Suto, Kanji Yasui, Tadashi Akahane, Masasuke Takata (NUT) CPM2007-116
Formation of high-density nano-dots using monomethylgermane (MMGe) on Si (001)-$2^{o}$off surface was investigated. By t... [more] CPM2007-116
pp.59-64
CPM 2007-11-17
09:50
Niigata Nagaoka University of Technology Preparation SiC/SOI structure substrate using Hot-Mesh CVD technique,and dependence of top Si layer thickness
Yuichiro Makino, Hitoshi Miura, Hiroshi Nishiyama, Kanji Yasui, Masasuke Takata, Yasunobu Inoue, Tadashi Akahane (Nagaoka Univ. of Tech.) CPM2007-117
Epitaxial growth of 3C-SiC films on SOI substrates was investigated by hot-mesh (HM-) CVD method using monomethylsilane ... [more] CPM2007-117
pp.65-68
CPM 2006-11-10
09:50
Ishikawa Kanazawa Univ. Formation of high density nanodots aiming for Ge embedded SiC
Tetsushi Kanemaru, Tomoaki Ogiwara, Kanji Yasui, Tadashi Akahane, Masasuke Takata (Nagaoka Univ. Tech.)
 [more] CPM2006-124
pp.65-70
CPM 2006-08-07
16:15
Iwate Iwate Univ. Low temperature epitaxial growth of 3C-SiC on SOI substrate using Hot-Mesh CVD method
Hitoshi Miura, Taishi Kurimoto, Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (Nagaoka Univ. of Tech.)
 [more] CPM2006-46
pp.31-36
CPM 2006-08-07
16:40
Iwate Iwate Univ. Growth of GaN on SiC/Si(111) substrates using AlN buffer layer by hot-mesh CVD method
Kazuyuki Tamura, Yusuke Fukada, Yuichiro Kuroki, Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ. of Tech)
 [more] CPM2006-47
pp.37-41
CPM 2005-11-11
14:45
Fukui   Changes of surface structures during reactions of monomethylgermane on Si(001) -- Toward to fabrication of Ge embedded in SiC structure --
Masayuki Harashima, Tetsushi Kanemaru, Ariyuki Kato, Tomoaki Ogiwara, Kanji Yasui, Tadashi Akahane, Masasuke Takata (Nagaoka Univ. of Technol.)
Initial stage of surface reactions between monomethylgermane (MMGe:
GeH$_3$CH$_3$) and Si(001) surfaces has been analy... [more]
CPM2005-155
pp.19-24
 Results 1 - 15 of 15  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan