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All Technical Committee Conferences  (Searched in: Recent 10 Years)

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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2022-06-21
13:00
Aichi Nagoya Univ. VBL3F (Aichi) [Invited Talk] Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property
Shigehisa Shibayama, Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST), Osamu Nakatsuka (Nagoya Univ.) SDM2022-24
To decrease channel resistance of 4H-SiC power MOSFET, there are two important approaches; (1) reducing the interface st... [more] SDM2022-24
pp.1-4
SDM 2022-06-21
13:40
Aichi Nagoya Univ. VBL3F (Aichi) Self-formation of Ge1-xSnx nanodots on insulator for multi-layer quantum dots structure
Kaoru Hashimoto, Shigehisa Shibayama, Koji Asaka, Osamu Nakatsuka (Nagoya Univ.) SDM2022-25
Germanium-tin (Ge1−xSnx) quantum dots (QDs) are promising materials as a light-emitting device for optical wiring techno... [more] SDM2022-25
pp.5-8
SDM 2019-06-21
11:20
Aichi Nagoya Univ. VBL3F (Aichi) Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation
Jihee Jeon, Akihiro Suzuki, Shigehisa Shibayama, Shigeaki Zaima, Osamu Nakatsuka (Nagoya Univ.) SDM2019-26
Ge1−xSnx is a promising channel material for CMOS transistors because of its higher mobilities of both electron and hole... [more] SDM2019-26
pp.5-9
SDM 2019-06-21
12:00
Aichi Nagoya Univ. VBL3F (Aichi) Mechanism of strain relaxation enhancement by ion implantation method for group-IV semiconductor alloy thin film
Hidetaka Sofue, Masahiro Fukuda, Shigehisa Shibayama (Nagoya Univ.), Shigeaki Zaima (Meijo Univ.), Osamu Nakatsuka, (Nagoya Univ.) SDM2019-28
 [more] SDM2019-28
pp.17-20
SDM 2018-01-30
15:30
Tokyo Kikai-Shinko-Kaikan Bldg. (Tokyo) [Invited Talk] Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties
Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indi... [more] SDM2017-96
pp.21-24
SDM 2015-06-19
14:35
Aichi VBL, Nagoya Univ. (Aichi) Control of electrical conduction property at metal/Ge interface by introducing ultra-high Sn content SnxGe1-x/Ge interlayer
Akihiro Suzuki, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-49
In order to realize high-performance Ge-channel CMOS, it is essential to reduce contact resistance at metal/Ge interface... [more] SDM2015-49
pp.57-61
SDM 2015-06-19
14:55
Aichi VBL, Nagoya Univ. (Aichi) Effect of annealing on defects in Ge1-xSnx epitaxial layers
Takanori Asano, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-50
In order to control the carrier concentration in Ge1-xSnx epitaxial layer, it is important to understand and control def... [more] SDM2015-50
pp.63-68
 Results 1 - 7 of 7  /   
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