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All Technical Committee Conferences (Searched in: Recent 10 Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2022-06-21 13:00 |
Aichi |
Nagoya Univ. VBL3F (Aichi) |
[Invited Talk]
Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property Shigehisa Shibayama, Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST), Osamu Nakatsuka (Nagoya Univ.) SDM2022-24 |
To decrease channel resistance of 4H-SiC power MOSFET, there are two important approaches; (1) reducing the interface st... [more] |
SDM2022-24 pp.1-4 |
SDM |
2022-06-21 13:40 |
Aichi |
Nagoya Univ. VBL3F (Aichi) |
Self-formation of Ge1-xSnx nanodots on insulator for multi-layer quantum dots structure Kaoru Hashimoto, Shigehisa Shibayama, Koji Asaka, Osamu Nakatsuka (Nagoya Univ.) SDM2022-25 |
Germanium-tin (Ge1−xSnx) quantum dots (QDs) are promising materials as a light-emitting device for optical wiring techno... [more] |
SDM2022-25 pp.5-8 |
SDM |
2019-06-21 11:20 |
Aichi |
Nagoya Univ. VBL3F (Aichi) |
Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation Jihee Jeon, Akihiro Suzuki, Shigehisa Shibayama, Shigeaki Zaima, Osamu Nakatsuka (Nagoya Univ.) SDM2019-26 |
Ge1−xSnx is a promising channel material for CMOS transistors because of its higher mobilities of both electron and hole... [more] |
SDM2019-26 pp.5-9 |
SDM |
2019-06-21 12:00 |
Aichi |
Nagoya Univ. VBL3F (Aichi) |
Mechanism of strain relaxation enhancement by ion implantation method for group-IV semiconductor alloy thin film Hidetaka Sofue, Masahiro Fukuda, Shigehisa Shibayama (Nagoya Univ.), Shigeaki Zaima (Meijo Univ.), Osamu Nakatsuka, (Nagoya Univ.) SDM2019-28 |
[more] |
SDM2019-28 pp.17-20 |
SDM |
2018-01-30 15:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
[Invited Talk]
Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96 |
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indi... [more] |
SDM2017-96 pp.21-24 |
SDM |
2015-06-19 14:35 |
Aichi |
VBL, Nagoya Univ. (Aichi) |
Control of electrical conduction property at metal/Ge interface by introducing ultra-high Sn content SnxGe1-x/Ge interlayer Akihiro Suzuki, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-49 |
In order to realize high-performance Ge-channel CMOS, it is essential to reduce contact resistance at metal/Ge interface... [more] |
SDM2015-49 pp.57-61 |
SDM |
2015-06-19 14:55 |
Aichi |
VBL, Nagoya Univ. (Aichi) |
Effect of annealing on defects in Ge1-xSnx epitaxial layers Takanori Asano, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-50 |
In order to control the carrier concentration in Ge1-xSnx epitaxial layer, it is important to understand and control def... [more] |
SDM2015-50 pp.63-68 |
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