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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM, LQE, ED |
2019-11-21 13:20 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Characterization of plasma-induced damage of GaN trench sidewall formed by ICP-RIE Shinji Yamada, Hideki Sakurai (Nagoya Univ./ULVAC), Yamato Osada, Toshiyuki Nakamura, Ryuichiro Kamimura (ULVAC), Jun Suda, Tetsu Kachi (Nagoya Univ.) ED2019-40 CPM2019-59 LQE2019-83 |
(To be available after the conference date) [more] |
ED2019-40 CPM2019-59 LQE2019-83 pp.33-35 |
SDM, ED, CPM |
2017-05-26 10:20 |
Aichi |
VBL, Nagoya University |
Characterization of GaN epilayers grown on GaN substrates by a microwave photoconductivity decay method Takato Asada (N.I.Tech), Yoshihito Ichikawa (NITech), Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita (Toyota Central R&D Labs.), Tetsu Kachi (Nagoya Univ.), Masashi Kato (NITech) ED2017-25 CPM2017-11 SDM2017-19 |
[more] |
ED2017-25 CPM2017-11 SDM2017-19 pp.55-58 |
ED, LQE, CPM |
2015-11-26 13:35 |
Osaka |
Osaka City University Media Center |
Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement Naoki Sawada (Kyoto Univ.), Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi (TOYOTA Central R&D Labs.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-73 CPM2015-108 LQE2015-105 |
[more] |
ED2015-73 CPM2015-108 LQE2015-105 pp.27-32 |
ED, SDM, CPM |
2012-05-18 09:50 |
Aichi |
VBL, Toyohashi Univ. of Technol. |
Evaluation of GaN substrates for vertical GaN power device applications Tetsu Kachi, Tsutomu Uesugi (Toyota RDL) ED2012-28 CPM2012-12 SDM2012-30 |
[more] |
ED2012-28 CPM2012-12 SDM2012-30 pp.53-56 |
CPM, LQE, ED |
2010-11-12 10:25 |
Osaka |
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Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Tsutomu Uesugi, Tetsu Kachi (Toyota CRDL, Inc.), Masahiro Sugimoto (Toyota Motor Corp.) ED2010-155 CPM2010-121 LQE2010-111 |
We carried out nondestructive measurements of the depth profile of etching-induced damage in p-GaN, in particular surfac... [more] |
ED2010-155 CPM2010-121 LQE2010-111 pp.59-62 |
ED, SDM |
2010-07-02 11:05 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Characteristics of GaN p-n diode with damage layer induced by ICP plasma process Tsutomu Uesugi, Tetsu Kachi (Toyota Central R&D Labs.), Tamotsu Hashizume (Hokkaido Univ.) ED2010-108 SDM2010-109 |
[more] |
ED2010-108 SDM2010-109 pp.253-256 |
ED |
2008-10-23 14:15 |
Fukuoka |
Kyushu Institute of Technology |
Recent Advances on GaN Vertical Power Devices Tetsu Kachi (Toyota R&D Labs.) ED2008-147 |
[more] |
ED2008-147 pp.133-138 |
SDM, ED |
2008-07-11 09:25 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
Recent Advances on GaN Vertical Power Device Tetsu Kachi (Toyota Central R&D Labs., Inc.) ED2008-72 SDM2008-91 |
Two types of the vertical device structure have been developed for GaN power devices. One is similar to DMOSFET, which ... [more] |
ED2008-72 SDM2008-91 pp.171-175 |
CPM, ED, LQE |
2007-10-12 13:50 |
Fukui |
Fukui Univ. |
Electrical characterization of homoepitaxially-grown pn GaN diodes Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.) ED2007-173 CPM2007-99 LQE2007-74 |
We report the electrical characterization of homoepitaxially-grown pn GaN by MOCVD on free-standing GaN substrates. The... [more] |
ED2007-173 CPM2007-99 LQE2007-74 pp.85-88 |
ED, SDM |
2007-06-25 15:30 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.) |
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more] |
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ED, SDM |
2007-06-25 15:55 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
Analysis of plasma etching damages in GaN by excess carrier lifetime measurements Masashi Kato, Keisuke Fukushima, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs.) |
Gallium nitride (GaN) is a promising material for high power and high frequency devices, and the etching processes are n... [more] |
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SDM, ED, CPM |
2007-05-24 14:50 |
Shizuoka |
Shizuoka Univ. |
Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier lifetime measurements Keisuke Fukushima, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs., Inc.) |
Gallium nitride (GaN) is promising for high power and high frequency devices, and the etching processes is necessary in ... [more] |
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SDM, ED, CPM |
2007-05-25 11:20 |
Shizuoka |
Shizuoka Univ. |
Characterization of plasma etching effects on GaN by electrical measurements of Schottky diodes Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs. Inc.) |
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power de... [more] |
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