|
|
All Technical Committee Conferences (Searched in: Recent 10 Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM, LQE, ED |
2019-11-21 13:20 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Characterization of plasma-induced damage of GaN trench sidewall formed by ICP-RIE Shinji Yamada, Hideki Sakurai (Nagoya Univ./ULVAC), Yamato Osada, Toshiyuki Nakamura, Ryuichiro Kamimura (ULVAC), Jun Suda, Tetsu Kachi (Nagoya Univ.) ED2019-40 CPM2019-59 LQE2019-83 |
(To be available after the conference date) [more] |
ED2019-40 CPM2019-59 LQE2019-83 pp.33-35 |
SDM, ED, CPM |
2017-05-26 10:20 |
Aichi |
VBL, Nagoya University |
Characterization of GaN epilayers grown on GaN substrates by a microwave photoconductivity decay method Takato Asada (N.I.Tech), Yoshihito Ichikawa (NITech), Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita (Toyota Central R&D Labs.), Tetsu Kachi (Nagoya Univ.), Masashi Kato (NITech) ED2017-25 CPM2017-11 SDM2017-19 |
[more] |
ED2017-25 CPM2017-11 SDM2017-19 pp.55-58 |
ED, LQE, CPM |
2015-11-26 13:35 |
Osaka |
Osaka City University Media Center |
Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement Naoki Sawada (Kyoto Univ.), Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi (TOYOTA Central R&D Labs.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-73 CPM2015-108 LQE2015-105 |
[more] |
ED2015-73 CPM2015-108 LQE2015-105 pp.27-32 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|