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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM | 2018-02-28 16:15 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Optimization of Experimental Parameters for Fabrication of Atomic Junctions Using Ground-State Searches of Ising Spin Computing Shotaro Sakai, Yuma Iwata, Masayuki Shiomura, Yusuke Kihara, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.)  ED2017-113 SDM2017-113 |
The ability to analyze big data has been required for the optimization of social systems. For the optimization of social... [more] | ED2017-113 SDM2017-113 pp.39-43 |
| ED, SDM | 2018-02-28 16:40 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Artificial Intelligence Approach for Control of Quantized Conductance of Au Atomic Junctions Using Feedback-Controlled Electromigration Yuma Iwata, Shotaro Sakai, Noriaki Numakura, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2017-114 SDM2017-114 |
Feedback controlled electromigration (FCE) methods have been developed to control electromigration and avoid catastrophi... [more] | ED2017-114 SDM2017-114 pp.45-50 |
| ED, SDM | 2014-02-28 10:50 |
Hokkaido | Hokkaido Univ. Centennial Hall | Tuning of Resistance of Au Nanowires by Feedback-Controlled Electromigration Using Real-Time Operating System (RTOS) Masazumi Ando, Yuma Kanamaru, Takanari Saito, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-146 SDM2013-161 |
Electromigration method becomes promising for the fabrication of nanogap electrodes. However, the nanogap electrodes fab... [more] | ED2013-146 SDM2013-161 pp.77-82 |
| ED, SDM | 2014-02-28 11:15 |
Hokkaido | Hokkaido Univ. Centennial Hall | Investigation of Feedback-Controlled Electromigration Using FPGA System Yuma Kanamaru, Masazumi Ando, Takanari Saito, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-147 SDM2013-162 |
Electromigration method for the fabrication of nanogaps is specifically simple as compared with other methods because it... [more] | ED2013-147 SDM2013-162 pp.83-87 |
| ED, SDM | 2014-02-28 12:05 |
Hokkaido | Hokkaido Univ. Centennial Hall | Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration Ryutaro Suda, Mitsuki Ito, Kohei Morihara, Takahiro Toyonaka, Kazuki Takikawa, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-149 SDM2013-164 |
We propose a simple and easy fabrication scheme of ferromagnetic single-electron transistors (FMSETs), nanogap based res... [more] | ED2013-149 SDM2013-164 pp.95-100 |
| ED, SDM | 2012-02-08 09:55 |
Hokkaido | Simultaneous Control of Series-Connected Nanogaps by Field-Emission-Induced Electromigration Mitsuki Ito, Shunsuke Akimoto, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2011-151 SDM2011-168 |
We present a simple and easy technique for the simultaneous control of electrical properties of multiple Ni nanogaps. Th... [more] | ED2011-151 SDM2011-168 pp.53-58 |
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| SDM | 2011-02-07 12:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A highly reliable Cu interconnect with CuSiN and Ti-based barrier metal: Impact of oxgen surface treatment Yumi Hayashi, Noriaki Matsunaga, Makoto Wada, Shinichi Nakao, Kei Watanabe, Satoshi Kato, Atsuko Sakata, Akihiro Kajita, Hideki Shibata (Toshiba Corp.) SDM2010-219 |
A trade-off property of CuSiN between EM improvement and line resistance increase was resolved by a breakthrough that le... [more] | SDM2010-219 pp.19-23 |
| SDM | 2011-02-07 14:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Networked-Nanographite Wire Grown by Metal-Photoemission-assisted Plasma-enhanced CVD without Catalysts Motonobu Sato (Fujitsu Ltd./JST/AIST), Shuichi Ogawa (Tohoku Univ./JST), Eiji Ikenaga (JASRI/JST), Yuji Takakuwa (Tohoku Univ./JST), Mizuhisa Nihei (Fujitsu Ltd./JST/AIST), Naoki Yokoyama (AIST) SDM2010-222 |
Carbon-based materials, such as carbon nanotubes and graphene nanoribbons, have been studied as interconnect materials b... [more] | SDM2010-222 pp.37-42 |
| ED, SDM | 2010-02-22 15:40 |
Okinawa | Okinawaken-Seinen-Kaikan | Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration Shunsuke Ueno, Yusuke Tomoda, Watari Kume, Michinobu Hanada, Kazutoshi Takiya, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2009-202 SDM2009-199 |
We report a novel technique for the integration of planer-type single-electron transistors (SETs) based on nanogaps usin... [more] | ED2009-202 SDM2009-199 pp.35-39 |
| SDM | 2010-02-05 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Optimization of Metallization Processes for 32-nm node Highly Reliable Ultralow-k (k=2.4)/Cu Multilevel Interconnects Incorporating a Bilayer Low-k Barrier Cap (k=3.9) M. Iguchi, S. Yokogawa, Hirokazu Aizawa, Y. Kakuhara, Hideaki Tsuchiya, Norio Okada, Kiyotaka Imai, M. Tohara, K. Fujii (NEC Electronics), T. Watanabe (Toshiba) SDM2009-186 |
Reliability of 32-nm-node ultralow-k (k=2.4)/Cu multilevel interconnects incorporating a bilayer low-k barrier cap (k=3.... [more] | SDM2009-186 pp.25-29 |
| SDM | 2010-02-05 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Low resistive and highly reliable copper interconnects in combination of silicide-cap with Ti-barrier for 32 nm-node and beyond Yumi Hayashi, Noriaki Matsunaga, Makoto Wada, Shinichi Nakao, Atsuko Sakata, Kei Watanabe, Hideki Shibata (Toshiba) SDM2009-187 |
Silicide-cap for Cu interconnects is promising for enhancing electromigration (EM) performance for 32 nm-node and beyond... [more] | SDM2009-187 pp.31-36 |
| SDM, ED | 2009-02-27 09:00 |
Hokkaido | Hokkaido Univ. | Fabrication of single-Electron Transistors Using Field-Emission-Induced Electromigration Yusuke Tomoda, Watari Kume, Michinobu Hanada, Keisuke Takahashi, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2008-232 SDM2008-224 |
We report a simple and easy technique for the fabrication of single-electron transistors (SETs) consisted of nanogaps wi... [more] | ED2008-232 SDM2008-224 pp.47-52 |
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