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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MWPTHz | 2023-11-01 13:45 |
Online | Online (Zoom) | [Invited Talk]
Low-Noise Terahertz Wave Detection by Fermi-Level Managed Barrier Diode on SiC Platform Hiroshi Ito (The Univ. of Tokyo), Tadao Nagatsuma (Osaka Univ.), Tadao ishibashi (Wavepackets)  MWPTHz2023-59 |
We developed novel THz-wave detectors fabricated on SiC platform implementing Fermi-level managed barrier (FMB) diodes f... [more] | MWPTHz2023-59 pp.5-8 |
| ED, THz | 2021-12-20 13:40 |
Miyagi | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Low-Noise Terahertz Wave Detection by Fermi-Level Managed Barrier Diode Hiroshi Ito (Kitasato Univ.), Tadao Ishibashi (NEL Techno) ED2021-49 |
A broadband and low-noise THz-wave detector called Fermi-level managed barrier (FMB) diode was developed. The fabricated... [more] | ED2021-49 pp.6-9 |
| R, LQE, OPE, CPM, EMD | 2020-08-28 16:35 |
Online | Online | [Invited Talk]
Novel Terahertz-Wave Detector: Fermi-Level Managed Barrier Diode Hiroshi Ito (Kitasato Univ.), Tadao Ishibashi (NEL Techno) R2020-18 EMD2020-17 CPM2020-10 OPE2020-30 LQE2020-10 |
A hetero-barrier rectifier, Fermi-level managed barrier (FMB) diode, was developed for broadband and low-noise THz-wave ... [more] | R2020-18 EMD2020-17 CPM2020-10 OPE2020-30 LQE2020-10 pp.43-46 |
| CPM, LQE, ED | 2016-12-12 15:45 |
Kyoto | Kyoto University | Normally-off operation of planar GaN MOS-HFET Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79 |
Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with ... [more] | ED2016-63 CPM2016-96 LQE2016-79 pp.31-34 |
| ED | 2015-12-22 10:05 |
Miyagi | RIEC, Tohoku Univ | Terahertz Emission and Detection from Double Graphene Layer Heterostructures Deepika Yadav, Stephane Boubanga Tombet, Stevanus Arnold, Takayuki Watanabe (RIEC Tohoku Univ.), Victor Ryzhii (Inst. of Ultra High Freq. Semicond. Elect. Russia), Taiichi Otsuji (RIEC Tohoku Univ.) ED2015-103 |
We report on experimental observation of terahertz emission and detection in a double graphene layer hetero structure wh... [more] | ED2015-103 pp.71-76 |
| LQE, LSJ | 2015-05-22 11:25 |
Ishikawa | High Sensitivity Image Sensor Overlaid with Thin-Film Crystalline Selenium/Gallium Oxide Heterojunction Photodiode Shigeyuki Imura, Kenji Kikuchi, Kazunori Miyakawa, Hiroshi Ohtake, Misao Kubota (NHK), Tokio Nakada (TUS), Toru Okino, Yutaka Hirose, Yoshihisa Kato (Panasonic), Nobukazu Teranishi (University of Hyogo) LQE2015-13 |
We have developed an stacked image sensor using a thin-film crystalline selenium (c-Se) as a photoconversion layer. The ... [more] | LQE2015-13 pp.63-67 |
|
| LQE, ED, CPM | 2014-11-28 14:30 |
Osaka | MOCVD Gorwoth and characterization of nearly lattice-matched InAlN/AlGaN 2DEG heterostructures Shu Fujita, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.) ED2014-93 CPM2014-150 LQE2014-121 |
InAlN/AlGaN two-dimensional-electron gas (2DEG) heterostructures are expected to be able to show extremely high breakdow... [more] | ED2014-93 CPM2014-150 LQE2014-121 pp.97-102 |
|
| ED, MW | 2014-01-17 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric) ED2013-124 MW2013-189 |
Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, ... [more] | ED2013-124 MW2013-189 pp.79-84 |
| ED | 2011-12-14 14:05 |
Miyagi | Tohoku University | Small-signal and 30 GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors with thin AlGaN barrier layers
-- Effects of AlGaN barrier thinning -- Masataka Higashiwaki (NICT/JST), Yi Pei, Rongming Chu, Umesh K. Mishra (UCSB) ED2011-102 |
Short-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with extremely thin AlGaN barrier layers were fabr... [more] | ED2011-102 pp.13-17 |
| LQE, ED, CPM | 2011-11-17 13:45 |
Kyoto | Katsura Hall，Kyoto Univ. | Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2011-79 CPM2011-128 LQE2011-102 |
This paper describes the temperature dependent two dimensional electron gas (2DEG) properties in AlInN/AlN/GaN heterostr... [more] | ED2011-79 CPM2011-128 LQE2011-102 pp.29-33 |
| LQE, ED, CPM | 2011-11-17 15:40 |
Kyoto | Katsura Hall，Kyoto Univ. | Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada (NTT) ED2011-83 CPM2011-132 LQE2011-106 |
In recessed-gate AlGaN/GaN Heterostructure field-effect transistors (HFETs) for E-mode operation, enhanced-barrier struc... [more] | ED2011-83 CPM2011-132 LQE2011-106 pp.49-54 |
| SDM, ED | 2008-07-11 15:20 |
Hokkaido | Kaderu２・７ | Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching Takayuki Sawada, Yuta Kaizuka, Kensuke Takahashi, Kazuaki Imai (Hokkaido Inst. of Tech.) ED2008-107 SDM2008-126 |
Electrical properties of bare i-AlGaN/GaN and Ni/i-AlGaN/GaN Schottky samples with various thickness of the AlGaN layer,... [more] | ED2008-107 SDM2008-126 pp.351-355 |
| ED, CPM, LQE | 2006-10-05 15:45 |
Kyoto | Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT) |
AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] | ED2006-158 CPM2006-95 LQE2006-62 pp.35-38 |
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| ED, CPM, LQE | 2006-10-06 14:55 |
Kyoto | GaN/InAlN/GaN Hetero Barrier Varactor Diodes Nobuhisa Tanuma, Minoru Kubota, Munecazu Tacano (Meisei Univ.) |
The capacitance-voltage (C-V) characteristics of In0.17Al0.83N/GaN heterostructure barrier varactors (HBV) grown by meta... [more] | ED2006-171 CPM2006-108 LQE2006-75 pp.103-106 |
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| LQE, ED, CPM | 2005-10-13 16:40 |
Shiga | Ritsumeikan Univ. | Electrical Properties of Ni/i-AlGaN/GaN Gate Structures and Influence of Termal Annealing Takayuki Sawada, Satoshi Yoneta, Kensuke Takahashi (Hokkaido Inst. Tech.), Seong-Woo Kim, Toshimasa Suzuki (Nippon Inst. Tech.) |
Electrical properties of Ni/i-AlGaN/GaN Schottky gate structures were investigated. Existence of surface native oxide d... [more] | ED2005-135 CPM2005-122 LQE2005-62 pp.79-84 |
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