Print edition: ISSN 0913-5685
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SDM2006-42
Characterization of oxide films/SiC fabricated by metal-organic chemical vapor deposition
Shiro Hino, Tomohiro Hatayama, Eisuke Tokumitsu (Tokyo Inst. of Tech.), Naruhisa Miura, Tatsuo Oomori (Mitsubishi Elec. Corp.)
pp. 1 - 5
SDM2006-43
Photoelectron Spectroscopy of HfO2/Ge(100) stacked structure
Hiroshi Nakagawa, Akio Ohta, Hiroyuki Abe, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)
pp. 7 - 12
SDM2006-44
Characterization of Interfacial Reactions in Al2O3/SiNx/poly-Si Stack Structure by Photoemission Measurements
Hiroaki Furukawa, Masahiro Taira, Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.), Kenji Komeda, Mitsuhiro Horikawa, Kuniaki Koyama, Hideharu Miyake (Elpida Memory)
pp. 13 - 17
SDM2006-45
Local carrier trapping and their detrapping process at constant voltage stress in La2O3-Al2O3 composite films
Toshifumi Sago, Akiyoshi Seko, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.)
pp. 19 - 24
SDM2006-46
Characterization of open volumes in high-k gate dielectrics by using monoenergetic positron beams
Akira Uedono, T. Otsuka, K. Ito, K. Shiraishi, Kikuo Yamabe (Univ. of Tsukuba), Seiichi Miyazaki (Hiroshima Univ.), Naoto Umezawa, Toyohiro Chikyow (NIMS), Toshiyuki Ohdaira, R. Suzuki (AIST), Seiji Inumiya, Satoshi Kamiyama (Selete), Yasushi Akasaka (TEL), Yasuo Nara (Selete), Keisaku Yamada (Waseda Uni.)
pp. 25 - 30
SDM2006-47
Work-function engineering of poly-Si gate by Fermi level pinning and its impact on low power CMOSFET
Yasuhiro Shimamoto (Hitachi), Jiro Yugami, Masao Inoue, Masaharu Mizutani, Takashi Hayashi, Masahiro Yoneda (Renesas)
pp. 31 - 35
SDM2006-48
Electric Properties on High-k Capacitors with Work-Function Tuned Metal Electrodes
Kenji Ohmori (NIMS), Parhat Ahmet (TIT), Kenji Shiraishi (Univ. of Tsukuba), Heiji Watanabe (Osaka Univ.), Yasushi Akasaka (Selete), Kikuo Yamabe (Univ. of Tsukuba), Michiko Yoshitake (NIMS), K. S. Chang, M. L. Green (NIST), Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.), Toyohiro Chikyow (NIMS)
pp. 37 - 41
SDM2006-49
Evaluation of Chemical Structures and Work Function of NiSi near the Interface between NiSi and SiO2
Hiromichi Yoshinaga, Daisuke Azuma, Hideki Murakami, Akio Ohta, Yuuki Munetaka, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Takayuki Aoyama, Kimihiko Hosaka (Fujitsu Laboratories Ltd.), Kentaro Shibahara (Hiroshima Univ.)
pp. 43 - 48
SDM2006-50
Surface Microroughness of Silicon
-- Mechanism and Its Reduction --
Hitoshi Morinaga, Kenji Shimaoka, Tadahiro Ohmi (Tohoku Univ.)
pp. 49 - 54
SDM2006-51
Reduction of ferritin core embedded in Si thin film by thermal annealing
Takashi Matsumura, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Shigeo Yoshii, Ichiro Yamashita (Panasonic)
pp. 55 - 59
SDM2006-52
Comparison between Si(110) and Si(100) Surfaces in their Kinetics of Initial Oxidation
-- From Real-time XPS Measurements --
Maki Suemitsu, Atsushi Kato, Hideaki Togashi, Atsushi Konno (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA), Yuzuru Narita (KIT)
pp. 61 - 63
SDM2006-53
Gate Oxide Process Dependence of CMOS Performance on Si(110) Surface
Susumu Hiyama, Junli Wang, Takayoshi Kato, Tomoyuki Hirano, Kaori Tai, Hayato Iwamoto (Sony)
pp. 65 - 69
SDM2006-54
The dependence of the intermediate nitridation states density at Si3N4/Si interface on surface Si atoms density
Masaaki Higuchi (Tohoku Univ.), Seiji Shinagawa (Musashi Inst. of Tech.), Akinobu Teramoto (Tohoku Univ.), Hiroshi Nohira (Musashi Inst. of Tech.), Takeo Hattori (Tohoku Univ./Musashi Inst. of Tech.), Eiji Ikenaga (JASRI), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 71 - 76
SDM2006-55
Analysis of nitrogen depth profile in SiO2/SiN stacks studied by angle-resolved photoemission spectroscopy
Satoshi Toyoda, Jun Okabayashi, Masaharu Oshima (Tokyo Univ.), Guo-Lin Liu, Ziyuan Liu, Kazuto Ikeda, Koji Usuda (STARC)
pp. 77 - 80
SDM2006-56
Realization of SiON films with small ΔVfb
Daisuke Matsushita, Koichi Muraoka, Yasushi Nakasaki, Koichi Kato, Shoko Kikuchi, Kiwamu Sakuma, Yuichiro Mitani (toshiba R&D center), Mariko Takayanagi, Kazuhiro Eguchi (Semiconductor Company)
pp. 81 - 86
SDM2006-57
Influence of Nitrogen and Hydrogen on NBTI in Ultrathin SiON
Yuichiro Mitani, Hideki Satake (Toshiba Corp.)
pp. 87 - 92
SDM2006-58
HfON Thin Film Formations by ECR Plasma Oxidation of HfN
Shun-ichiro Ohmi, Tomoki Kurose, Masaki Satoh (Tokyo Tech)
pp. 93 - 97
SDM2006-59
Interfacial reaction in HfO2/SiO2/Si(001) during O2 anneal observed by high-resolution RBS
Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura (Kyoto Univ.), Masashi Uematsu (NTT BRL), Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.)
pp. 99 - 102
SDM2006-60
The effect on thermal stability by nitrogen atoms in HfO2-based gate dielectrics
Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta (FUJITSU LABORATORIES LTD.)
pp. 103 - 106
SDM2006-61
unknown
Wataru Mizubayashi (MIRAI-ASRC, AIST), Arito Ogawa, Toshihide Nabatame, Hideki Satake (MIRAI-ASET), Akira Toriumi (MIRAI-ASRC, AIST, Univ. of Tokyo)
pp. 107 - 111
SDM2006-62
Electric characteristics of HfSiON gate dielectric film(tentative)
Ryu Hasunuma, Tatsuya Naito (Univ. of Tsukuba), Seiji Inumiya (Selete), Kikuo Yamabe (Univ. of Tsukuba)
pp. 113 - 117
SDM2006-63
XPS studies on barrier height at Au/ultra-thin SiO2 interface
Haruhiko Suzuki, Akira Hasegawa, Hiroshi Nohira, Takeo Hattori (Musashi inst technol), Moroyuki Yamawaki, Nobuko Suzuki (SOKENDAI), Daisuke Kobayashi, Kazuyuki Hirose (ISAS)
pp. 119 - 124
SDM2006-64
Work Functions at Impurity Pileup Ni-FUSI/SiO(N) Interface and FUGE(Fully Germanided) gates
Yoshinori Tsuchiya, Masahiko Yoshiki, Atsuhiro Kinoshita, Masato Koyama, Junji Koga, Akira Nishiyama (Toshiba Co,)
pp. 125 - 130
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.