Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2007-31
0.10 um Ion-Implanted GaAs MESFETs with Low Cost Production Process
Masataka Watanabe, Daiji Fukushi, Hiroshi Yano, Shigeru Nakajima (Eudyna Devices)
pp. 1 - 5
ED2007-32
A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance
Hirotaka Amasuga, Akira Inoue, Seiki Goto, Tetsuo Kunii, Yoshitsugu Yamamoto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric)
pp. 7 - 11
ED2007-33
Study of localized spins in Be delta-doped GaAs structure
J.p. Noh, D.w. Jung, A. z. m. Touhidul Islam, Nobuo Otauka (JAIST)
pp. 13 - 16
ED2007-34
Epitaxial lift-off of InAs thin films and their van der Waals bonding on SiO2/Si wafers
Hayato Takita, Yonkil Jeong, Jun-ya Arita, Toshi-kazu Suzuki (JAIST)
pp. 17 - 20
ED2007-35
Growth of Insb films on Si(111) surface by 2-step growth
Kazunori Murata, Norsuryati Binti Ahmad, Yu Tamura, Masayuki Mori, Toyokazu Tambo, Koichi Maezawa (Univ of Toyama)
pp. 21 - 25
ED2007-36
Formation of high quality InSb film via InSb bi-layer on Si substrate
Mitsufumi Saito, Masayuki Mori, Yuji Yamasita, Toyokazu Tambo, Koichi Maezawa (Univ. of Toyama)
pp. 27 - 32
ED2007-37
DC characteristics of HBT with buried SiO2 wires in collector
Shinnosuke Takahashi, Tsukasa Miura, Hiroaki Yamashita (Tokyo Tech), Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech/JST-CREST)
pp. 33 - 37
ED2007-38
MOVPE growth of high-quality InP-based resonant tunneling diodes
Hiroki Sugiyama, Hideaki Matsuzaki, Yasuhiro Oda, Haruki Yokoyama, Takatomo Enoki, Takashi Kobayashi (NTT)
pp. 39 - 43
ED2007-39
Study for implementation of integrated gyrators by using resonant tunneling diodes
Michihiko Suhara, Eri Ueki, Tsugunori Okumura (Tokyo Metro. Univ.)
pp. 45 - 50
ED2007-40
Optical control of triple quantum disks on waveguide structure
Masahito Yamaguchi, Minori Yokoi (Nagoya Univ.), Hidetoshi Takagi (Ube N.C.T.), Nobuhiko Sawaki (Nagoya Univ.)
pp. 51 - 56
ED2007-41
[Invited Talk]
Current transport mechanism of metal/p-GaN contacts
Kenji Shiojima (Fukui Univ.)
pp. 57 - 60
ED2007-42
Anodic oxidation on n-GaN surface using photoelectrochemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.)
pp. 61 - 65
ED2007-43
Surface passivation of AlGaN/GaN HFETs by RF magnetron sputtering using AlN target
Nariaki Tanaka (JAIST), Yasunobu Sumida (POWDEC), Toshi-kazu Suzuki (JAIST)
pp. 67 - 70
ED2007-44
Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current
Kazuki Nomoto, Taku Tajima (Hosei Univ.), Tomoyoshi Mishima (Hitachi Cable Ltd.), Masataka Satoh, Tohru Nakamura (Hosei Univ.)
pp. 71 - 74
ED2007-45
Electrical and structural properties of Al implanted 4H-SiC
Masataka Satoh, Shingo Miyagawa, Takahiro Kudoh, Shohei Nagata, Taku Tajima, Tohru Nakamura (Hosei Univ.)
pp. 75 - 78
ED2007-46
Reverse characteristics of 4H-SiC PiN diode with Vanadium ion implanted guard-ring
Shuichi Ono, Manabu Arai (NJRC)
pp. 79 - 83
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.