Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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CPM2011-122
AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy
Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.)
pp. 1 - 4
CPM2011-123
Control of interlayer on MOVPE growth of AlN on sapphire substrate
Reina Miyagawa, Shibo Yang, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Takaaki Kuwahara, Noriyuki Kuwano, Masatoshi Mitsuhara (Kyushu Univ.)
pp. 5 - 10
CPM2011-124
Etch-pit method of threading dislocations in epitaxial AlN films
Takuya Nomura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Ryu, Takaaki Kuwahara, Noriyuki Kuwano (Kyusyu Univ.)
pp. 11 - 14
CPM2011-125
Decreasing Dislocation Density of MOCVD-GaN Using Silicon Dioxide Masks
Masaru Tanimoto, Shiro Sakai (Tokushima Univ.)
pp. 15 - 18
CPM2011-126
Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control
Hajime Fujikura, Yuichi Oshima, Takehiro Yoshida, Takeshi Megro, Toshiya Saito (Hitachi Cable)
pp. 19 - 24
CPM2011-127
Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN
Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.)
pp. 25 - 28
CPM2011-128
Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures
Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui)
pp. 29 - 33
CPM2011-129
Characterization of insulators and interfaces in GaN-based MIS-diodes
Yasuhiro Iwata, Toshiharu Kubo, Takashi Egawa (NITech)
pp. 35 - 38
CPM2011-130
Current Transport Characteristics of Quasi-AlGaN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities
Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.)
pp. 39 - 42
CPM2011-131
Analysis of Recovery process in AlGaN/GaN HFET Current Collapse
Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS)
pp. 43 - 48
CPM2011-132
Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures
Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada (NTT)
pp. 49 - 54
CPM2011-133
High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch
Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen (AIST), Tatsuo Morita, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)
pp. 55 - 60
CPM2011-134
Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications
Masato Nishimori, Kozo Makiyama, Toshihiro Ohki, Atsushi Yamada, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Keiji Watanabe (Fujitsu Lab.)
pp. 61 - 65
CPM2011-135
Ultraviolet Photodetectors using Transparent Gate AlGaN/GaN-HEMT
Tomotaka Narita, Akio Wakejima, Takashi Egawa (NIT)
pp. 67 - 70
CPM2011-136
Concentrating properties of nitride-based solar cells
Mikiko Mori, Shota Yamamoto, Yosuke Kuwahara, Takahiro Fujii, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.)
pp. 71 - 75
CPM2011-137
Strain-Induced Effects on the Electronic Band Structure of AlN
Ryota Ishii, Akio Kaneta, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 77 - 80
CPM2011-138
Microstructural observation of AlGaN on ELO-AlN
Kimiyasu Ide, Junichi Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.)
pp. 81 - 85
CPM2011-139
2D-mapping measurement of residual strain in GaN substrates by micro-reflectance spectroscopy
Atsushi Yamaguchi (Kanazawa Inst. Tech.), H. Y. Geng, Haruo Sunakawa, Y. Ishihara, Toshiharu Matsueda, Akira Usui (Furukawa)
pp. 87 - 91
CPM2011-140
Effect of Mg co-doping on optical characteristics of GaN:Eu
Hiroto Sekiguchi (Toyohashi Univ. Tech.), Yasufumi Takagi (Hamamatsu Photonics), Tatsuki Otani, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.)
pp. 93 - 97
CPM2011-141
Optical gain spectra in semipolar {20-21} oriented green InGaN LDs in comparison with (0001) LDs
Yoon Seok Kim, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Kyono, Masaki Ueno, Takao Nakamura (Sumitomo Electric)
pp. 99 - 102
CPM2011-142
Development of 260-nm AlGaN-based deep-ultraviolet light-emitting diodes using 2inchx3 MOVPE system
Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Norimichi Noguchi, Kenji Tsubaki (RIKEN/PEW)
pp. 103 - 106
CPM2011-143
Investigation for chracteristics of AlN growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN Deep-UV LEDs
Noritoshi Maeda, Hideki Hirayama, Sachie Fujikawa (RIKEN)
pp. 107 - 112
CPM2011-144
Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates
Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Kenji Tsubaki (RIKEN/PEW), Masakazu Sugiyama (Tokyo Univ.)
pp. 113 - 116
CPM2011-145
Growth of (Si)(Ga)AlC(P) thin film on sapphire by metal organic chemical vapor deposition
Yuya Ohnishi, Fumiya Horie, Shiro Sakai (Tokushimadai)
pp. 117 - 120
CPM2011-146
Metalorganic Chemical Vapor Deposition Growth of GaN Nanowires and Their Application to Single Photon Sources
Munetaka Arita, Kihyun Choi, Yasuhiko Arakawa (Univ. of Tokyo)
pp. 121 - 126
CPM2011-147
Fabrication and characterization of near-infrared (1.46 um) GaN-based nanocolumn LEDs with In-rich InGaN active layer
Jumpei Kamimura, Katsumi Kishino, Kouichi Kamiyama, Akihiko Kikuchi (Sophia Univ.)
pp. 127 - 130
CPM2011-148
Fabrication of GaN based Terahertz-Quantum Cascade Laser Structure and Observation of Spontaneous Emission
Wataru Terashima, Hideki Hirayama (RIKEN)
pp. 131 - 134
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.