Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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CPM2011-8
Fabration of CuxS and CuxZnyS thin films by the electrochemical deposition method
Kai Yang, Yuki Nakashima, Masaya Ichimura (NIT)
pp. 1 - 6
CPM2011-9
High thickness AlN growth with period trench patterned c-plane AlN on a-plane Sapphire by low-pressure HVPE
Yuta Takagi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.)
pp. 7 - 10
CPM2011-10
Raman Scattering Spectroscopy for Epitaxial AlN films
Shibo Yang, Reina Miyagawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroshi Harima (Kyoto Inst. Tech.)
pp. 11 - 14
CPM2011-11
Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers
Masashi Kato, Atsushi Yoshida, Masaya Ichimura (Nagoya Inst. of Tech.)
pp. 15 - 20
CPM2011-12
Correlation between strain fields and excess carrier lifetime maps in 3C-SiC wafer
Atsushi Yoshida, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.)
pp. 21 - 26
CPM2011-13
Characterization of SiC photoelectrochemical properties for water splitting
Tomonari Yasuda, Masashi Kato, Masaya Ichimura (NIT)
pp. 27 - 31
CPM2011-14
Improvement of n-type 4H-SiC Schottky diode characteristics using passivation of defect by anodic oxidation.
Masaya Kimura, Masashi Kato, Masaya Ichimura (NIT)
pp. 33 - 38
CPM2011-15
Lateral overgrowth of GaN by ammonia-based metal-organic molecular beam epitaxy
Shota Uchiyama, Chia-Hung Lin, Ryota Abe, Takahiro Maruyama, Shigeya Naritsuka (Meijo Univ.)
pp. 39 - 43
CPM2011-16
Growth of InGaN nanowires on a (111)Si substrate by RF-MBE
Takuya Tabata, Ji-Hyun Paek, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.)
pp. 45 - 48
CPM2011-17
Molecular beam epitaxy growth of AlGaPN alloys for optical confinement structure on Si substrate
Keisuke Kumagai, Kohei Shoji, Tsuyoshi Kawai, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ.Tech.)
pp. 49 - 54
CPM2011-18
Molecular beam epitaxy growth of BGaP
Noriyuki Urakami, Futoshi Fukami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.)
pp. 55 - 58
CPM2011-19
Curvature control of substrate by MOVPE growth of GaN with voids
Sumito Ohuchi, Hideto Miyake, Kazumasa Hiramatsu (mie Univ.)
pp. 59 - 62
CPM2011-20
MOVPE growth of thick InGaN on (1-101)GaN/Si
Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech)
pp. 63 - 66
CPM2011-21
MOCVD growth of GaN on graphite substrates
Shinichi Kohda, Toshiyuki Takizawa, Nobuaki Nagao, Masahiro Ishida, Tetsuzo Ueda (Panasonic)
pp. 67 - 70
CPM2011-22
Antiphase domains in GaP grown on Si substrates using metalorganic vapor phase epitaxy
Yasushi Takano, Tatsuya Takagi, Tatsuru Misaki, Ryo Miyahara (Shizuoka Univ.)
pp. 71 - 75
CPM2011-23
Growth of GaN and AlGaN on B-Ga2O3 (100) substrate
Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki, Hiroshi Amano (Meijo Univ/Nagoya Univ)
pp. 77 - 81
CPM2011-24
MOVPE growth of nitrides analyzed using a novel in situ X-ray diffraction system
Daiki Tanaka, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.)
pp. 83 - 87
CPM2011-25
High-quality AlN/GaN distributed Bragg reflectors grown on AlN templates
Kouta Yagi, Mitsuru Kaga, Kouji Yamashita, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijou Univ.), Isamu Akasaki (Meijou Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.)
pp. 89 - 93
CPM2011-26
High electron mobility InSb film grown by surface reconstruction controlled epitaxy
Masayuki Mori, Koji Nakayama, Kimihiko Nakatani, Yuichiro Yasui, Koichi Maezawa (Univ. of Toyama)
pp. 95 - 98
CPM2011-27
Current path control with Nitride semiconductor-based tunnel junction
Kouji Yamashita, Mitsuru Kaga, Kouta Yagi (Meijo Univ.), Atsushi Suzuki (EL-SEED Corp.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.)
pp. 99 - 104
CPM2011-28
Fabrication of GaN-based Tunnel Junctions
Mitsuru Kaga, Daisuke Iida (Meijo Univ), Tsukasa Kitano (EL-SEED), Kouji Yamashita, Kouta Yagi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki (Meijo Univ/Nagoya Univ), Hiroshi Amano (Nagoya Univ)
pp. 105 - 110
CPM2011-29
Increase of output power and spectral width of near-infrared small-size light source using glass phosphor
Shingo Fuchi, Shunichi Kobayashi, Koji Oshima, Yoshikazu Takeda (Nagoya Univ.)
pp. 111 - 116
CPM2011-30
High reflective electrode for UV light emitting diodes
Kosuke Takehara, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Shun Ito, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Unv.), Hiroshi Amano (Nagoya Univ.)
pp. 117 - 121
CPM2011-31
Aging test of AlGaN-based ultraviolet light emitting diodes
-- The Degradation Mechanism of UV-LED --
Park Gwi Jin, Takayuki Sugiyama, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Tetsuhiko Inazu, Takehiko Fujita, Cyril Pernot, Akira Hirano (UV Craftory)
pp. 123 - 126
CPM2011-32
Internal quantum efficiency of AlGaN multiquantum wells
Junichi Yamamoto, Kazuhito Ban, Kenichiro Takeda, Kimiyasu Ide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.)
pp. 127 - 130
CPM2011-33
Development of radiation imaging arrays using thick CdTe layers grown on Si substrates by MOVPE
Tadahiro Tachi, Hiroaki Inuzuka, Naoya Fujimura, Takaki Kondo, Syuhei Nanba, Shinya Muramatsu, Yasunori Agata, Madan Niraula, Kazuhito Yasuda (NTT)
pp. 131 - 134
CPM2011-34
Preparation and evaluation of Ga2O3 ovygen sensors
Takahiro Yamamoto, Shinya Kayano, Hiroki Ikeda, Yoshifumi Suzuki, Masaaki Isai (Shizuoka Univ.)
pp. 135 - 138
CPM2011-35
Stabilized Pt deposition on the TiO2 films and their photocatalytic properties
Ikuta Nakamura, Takanori Sato, Masaaki Isai (Shizuoka Univ.), Yoichi Hoshi (Tokyo polytech.Univ.)
pp. 139 - 143
CPM2011-36
Preparation and evaluation of LiMn2O4 films prepared by sputtering method
Mitsuhiro Nakamura, Akio Niwa, Masaaki Isai (Shizuoka Univ.)
pp. 145 - 149
CPM2011-37
Evaluation of Pt/GaN Schottky barrier diode for CO gas sensor operating in high temperatures
Daichi Maruyama, Hiroshi Okada, Hiroto Sekiguchi, Akihiro Wakahara (Toyohashi Univ. of Tech)
pp. 151 - 155
CPM2011-38
A tandem photo electrochemical solar cell by SnS and ZnO thin films.
Shou Hattori, Masaya Ichimura (Nagoya Inst. Technol.)
pp. 157 - 162
CPM2011-39
Fabrication of non-polar a-plane nitride based solar cells
Tatsuro Nakao, Yosuke Kuwahara, Yasuharu Fuziyama, Takahiro Fujii, Toru Sugiyama, Shota Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.)
pp. 163 - 167
CPM2011-40
Fabrication of nitride-based solar cells electrode structure
Shota Yamamoto, Yoshiki Morita, Yosuke Kuwahara, Takahiro Fujii, Toru Sugiyama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.)
pp. 169 - 173
CPM2011-41
Current collapse in GaN-based HFETs
-- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate --
Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.)
pp. 175 - 178
CPM2011-42
Study on AlInN barrier layer of GaInN channel HFET
Kazuya Ikeda, Yasuhiro Isobe, Hiromichi Ikki, Naofumi Horio, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.)
pp. 179 - 183
CPM2011-43
Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition
Eiji Miyazaki, Takeshi Gouda (Nagoya Univ.), Shigeru Kishimoto (Nagoya Univ./VBL, Nagoya Univ.), Takashi Mizutani (Nagoya Univ.)
pp. 185 - 190
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.