IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Component Parts and Materials

Workshop Date : 2012-10-26 - 2012-10-27 / Issue Date : 2012-10-19

CPM2012-93
Electronic properties of ZnO thin films grown on a-plane sapphire substrates using high-energy H2O generated by a catalytic reaction -- Analysis using a two layer model --
Eichi Nagatomi, Naoya Yamaguchi, Tomohiko Takeuchi, Souichi Satomoto, Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.)
pp. 1 - 5

CPM2012-94
Effect of a low-temperature buffer layer on the properties of ZnO films grown on glass substrates using catalytically generated high-energy H2O
Takahiro Oyanagi, Kazuki Takezawa, Takahiro Kato (Nagaoka Univ. Technol), Hironori Katagiri, Kazuo Jimbo (NNCT), Kanji Yasui (Nagaoka Univ. Technol)
pp. 7 - 11

CPM2012-95
Examination of Resistivity of AZO Thin Films Deposited by Sputtering Method
Katsuhito Nagoshi, Yusuke Tomiguchi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.)
pp. 13 - 16

CPM2012-96
Cu2ZnSnS4 Thin Film Solar Cells Prepared by Non-Vacuum Processing -- Improvement of Conversion Efficiency by Investigation of Window Layer Deposition Process --
Kunihiko Tanaka, Takumi Aizawa, Hisao Uchiki (NUT)
pp. 17 - 21

CPM2012-97
Fabrication of three-dimensional-structure solar cell with Cu2ZnSnS4
Masato Kurokawa, Kunihiko Tanaka, Minoru Kato, Tomotake Naganuma, Yoshiki Nagahashi, Hisao Uchiki (Nagaoka Univ. of Tec.)
pp. 23 - 28

CPM2012-98
Preparation of Cu2ZnSnS4 thin film by sol-gel sulfurization method with Cl free coating solutions
Kota Sakuma, Kunihiko Tanaka, Takumi Aizawa, Yuya Nakano, Hisao Uchiki (NUT)
pp. 29 - 32

CPM2012-99
Optimization of sulfurization in CZTS thin film solar cells
Kento Higuchi, Tsukasa Washio, Kazuo Jimbo, Hironori Katagiri (NNCT)
pp. 33 - 37

CPM2012-100
Formation of AlN layers on Si substrates and growth of 3C-SiC on AlN/Si substrates
Hideki Nakazawa, Daiki Suzuki, Tsugutada Narita, Yohei Yamamoto (Hirosaki Univ.)
pp. 39 - 44

CPM2012-101
Interface between GaP and Si substrates prepared using metalorganic vapor phase epitaxy
Tatsuya Takagi, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.)
pp. 45 - 48

CPM2012-102
Formation of multi-phases of monosilicide and disilicide in Ni/Si system
Atsushi Noya, Mayumi Takeyama, Masaru Sato, Susumu Tokuda (Kitami Inst. Technol.)
pp. 49 - 53

CPM2012-103
Interfacial reaction and/or diffusion in Cu/metal/SiO2/Si system (I) -- Diffusion behavior of Va transition metal --
Mayumi B. Takeyama, Atsushi Noya (Kitami Inst. of Technol.)
pp. 55 - 60

CPM2012-104
CuAlO2 film deposition by reactive sputtering using Cu/Al target prepared by Cold Spray method
Takuya Yokomoto, Takashi Arai, Takayuki Kosaka, Kazuki Okajima, Tomohiko Yamakami, Katsuya Abe, Kazuhiko Sakaki (Shinshu Univ.)
pp. 61 - 64

CPM2012-105
Examination of underlayer for SrAl2O4: Eu, Dy thin films by annealing methods
Kazuaki Kobayashi, Hidehiko Shimizu, Haruo Iwano, Yasuo Fukushima, Takahiro Kawakami (Niigata Univ.)
pp. 65 - 69

CPM2012-106
Mechanical Properties of the OLEDs and ITO Films Prepared on Plastic Substrates
Hiroaki Matsui, Hidehiko Shimizu, Haruo Iwano, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.)
pp. 71 - 76

CPM2012-107
Energy Transfer Process in YVO4:Bi Yellow Phosphor
Taiga Abe, Kouta Taniguchi, Junpei Yagi, Ariyuki Kato (Nagaoka Univ. of Tech.)
pp. 77 - 80

CPM2012-108
Manufacturing and Characterization of Graphene Intercalation Compounds
Hiroshi Yamamoto, Hiroaki Ichikawa, Shogo Satoh, Nobuyuki Iwata (Nihon Univ.)
pp. 81 - 86

CPM2012-109
Field Emission Characteristics Considering both the Shield Effect and Series Resistance
Yuji Asada, Masahiro Yamashita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.)
pp. 87 - 90

CPM2012-110
Estimation of the number of junctions in the Bi-2212 stack by pulse current method
Takahiro Kato, Tsubasa Nishikata, Yukio Kotaki, Hisayuki Suematsu, Kanji Yasui (Nagaoka Univ. Tech), Akira Kawakami (NICT)
pp. 91 - 96

CPM2012-111
Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE
Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.)
pp. 97 - 100

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan