|
|
| Chair |
|
Koichi Maezawa (Univ. of Toyama) |
| Vice Chair |
|
Kunio Tsuda (Toshiba) |
| Secretary |
|
Toshikazu Suzuki (JAIST), Manabu Arai (New JRC) |
| Assistant |
|
Masataka Higashiwaki (NICT), Toshiyuki Oishi (Saga Univ.) |
|
|
|
| Chair |
|
Satoru Noge (Numazu National College of Tech.) |
| Vice Chair |
|
Fumihiko Hirose (Yamagata Univ.) |
| Secretary |
|
Junichi Kodate (NTT), Nobuyuki Iwata (Nihon Univ.) |
| Assistant |
|
Takashi Sakamoto (NTT), Yuichi Nakamura (Toyohashi Univ. of Tech.) |
|
|
|
| Chair |
|
Susumu Noda (Kyoto Univ.) |
| Vice Chair |
|
Tsuyoshi Yamamoto (Fujitsu Labs.) |
| Secretary |
|
Naoki Fujiwara (NTT), Takashi Katagiri (Tohoku Univ.) |
|
| Conference Date |
Mon, Dec 12, 2016 13:00 - 17:25
Tue, Dec 13, 2016 08:40 - 15:30 |
| Topics |
Nitride semiconductors, optoelectronic devices, and related materials |
| Conference Place |
Katsura campus, Kyoto University |
| Transportation Guide |
Katsura Hall is located in 1F of the adsiministration building. |
Contact
Person |
Prof. Shizuo Fujita
+81-75-383-3075 |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Mon, Dec 12 PM
13:00 - 17:25 |
| (1) |
13:00-13:25 |
Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates  ED2016-57 CPM2016-90 LQE2016-73 |
Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.) |
| (2) |
13:25-13:50 |
Observation of Initial Stage of Degradation in Au/Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy ED2016-58 CPM2016-91 LQE2016-74 |
Kenji Shiojima, Shingo Murase, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) |
| (3) |
13:50-14:15 |
Temperature Dependence of Forward Current-Voltage Characteristics in Homoepitaxial N-type GaN Schottky Barrier Diodes ED2016-59 CPM2016-92 LQE2016-75 |
Takuya Maeda (Kyoto Univ.), Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto (Sumitomo electric industries,Ltd.), Masahiro Horita, Jun Suda (Kyoto Univ.) |
| (4) |
14:15-14:40 |
Effect of Surface Treatment in Au/Ni Schottky Diodes Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Sub-strates ED2016-60 CPM2016-93 LQE2016-76 |
Kenji Shiojima, Moe Naganawa (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) |
| (5) |
14:40-15:05 |
Characterization of Free-Standing GaN Bulk Substrates by Raman Scattering Spectroscopy and Infrared Reflectance Spectroscopy ED2016-61 CPM2016-94 LQE2016-77 |
Kazutaka Kanegae, Mitsuaki Kaneko, Tsunenobu Kimoto, Masahiro Horita, Jun Suda (Kyoto Univ.) |
| |
15:05-15:20 |
Break ( 15 min. ) |
| (6) |
15:20-15:45 |
Evaluating Current Collapse of GaN HEMT devices by Carrier Number ED2016-62 CPM2016-95 LQE2016-78 |
Kohei Oasa, Akira Yoshioka, Yasunobu Saito, Takuo Kikuchi, Tatsuya Ohguro, Takeshi Hamamoto, Toru Sugiyama (TOSHIBA) |
| (7) |
15:45-16:10 |
Normally-off operation of planar GaN MOS-HFET ED2016-63 CPM2016-96 LQE2016-79 |
Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) |
| (8) |
16:10-16:35 |
AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current ED2016-64 CPM2016-97 LQE2016-80 |
Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui) |
| (9) |
16:35-17:00 |
Reduced Current Collapse in AlGaN/GaN HEMTs with a 3-Dimensional Field Plate ED2016-65 CPM2016-98 LQE2016-81 |
Suzuki Atsuya, Joel Asubar, Tokuda Hirokuni, Kuzuhara Masaaki (Univ. Fukui) |
| (10) |
17:00-17:25 |
Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process ED2016-66 CPM2016-99 LQE2016-82 |
Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato (Hokkaido Univ.) |
Tue, Dec 13 AM
08:40 - 09:55 |
| (11) |
08:40-09:05 |
Enhancement of Optical Gain by Controlling Waveguide Modes in Semipolar InGaN Quantum Well Laser Diodes ED2016-67 CPM2016-100 LQE2016-83 |
Keigo Matsuura, Shigeta Sakai, Atsushi A. Yamaguchi (KIT) |
| (12) |
09:05-09:30 |
MOCVD growth of rough-surface p-GaN and its application to InGaN/GaN MQW solar cells ED2016-68 CPM2016-101 LQE2016-84 |
Takuma Mori, Makoto Miyoshi, Takashi Egawa (NIT) |
| (13) |
09:30-09:55 |
Growth and optical properties of semipolar AlGaN/AlN quantum wells on m-plane sapphire substrates ED2016-69 CPM2016-102 LQE2016-85 |
Issei Oshima (RIKEN/Saitama Univ.), Masafumi Jo, Noritoshi Maeda (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN) |
| |
09:55-10:05 |
Break ( 10 min. ) |
Tue, Dec 13 AM
10:05 - 11:45 |
| (14) |
10:05-10:30 |
Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells ED2016-70 CPM2016-103 LQE2016-86 |
Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (15) |
10:30-10:55 |
Crystal growth of bulk AlN by a clean process ED2016-71 CPM2016-104 LQE2016-87 |
Katsuhiro Kishimoto, Wu PeiTsen, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (16) |
10:55-11:20 |
Development of Highly Effective Deep-Ultraviolet Light-Emitting Diode by using Transparent p-AlGaN Contact Layer ED2016-72 CPM2016-105 LQE2016-88 |
Takuya Mino (Panasonic), Hideki Hirayama (RIKEN), Takayoshi Takano, Koji Goto, Mitsuhiko Ueda, Kenji Tsubaki (Panasonic) |
| (17) |
11:20-11:45 |
Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip ED2016-73 CPM2016-106 LQE2016-89 |
Kazuaki Tsuchiyama, Shu Utsuhomiya, Shota Nakagawa, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) |
Tue, Dec 13 PM
13:00 - 15:30 |
| (18) |
13:00-13:25 |
Growth and application of corundum-structured n- and p-type wide band gap oxide semiconductors ED2016-74 CPM2016-107 LQE2016-90 |
Kentaro Kaneko (Kyoto Univ.), Toshimi Hitora (FLOSFIA INC.), Shizuo Fujita (Kyoto Univ.) |
| (19) |
13:25-13:50 |
Fabrication of TiO2 channel TFTs using room temperature atomic layer deposition and their application to light sensor ED2016-75 CPM2016-108 LQE2016-91 |
Ko Kikuchi, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ) |
| (20) |
13:50-14:15 |
Optical design of organic solar cells using nanotexture and high-refractive-index glass ED2016-76 CPM2016-109 LQE2016-92 |
Shigeru Kubota, Yoshiki Harada (Yamagata Univ.), Takenori Sudo (Waseda Univ.), Kensaku Kanomata, Bashir Ahmmad (Yamagata Univ.), Jun Mizuno (Waseda Univ.), Fumihiko Hirose (Yamagata Univ.) |
| (21) |
14:15-14:40 |
Fabrication of artificial zeolite using atomic layer deposition at room temperature and application to Dye-Sensitized Solar Cells ED2016-77 CPM2016-110 LQE2016-93 |
Takahiro Imai, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad Arima, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) |
| (22) |
14:40-15:05 |
Characterization of electric properties for wide-gap semiconductors using terahertz time-domain elipsometry ED2016-78 CPM2016-111 LQE2016-94 |
Takashi Fujii (RITS/PNP), Kohei Tachi, Tsutomu Araki, Yasushi Nanishi (RITS), Toshiyuki Iwamoto, Yukinori Sato (PNP), Takshi Nagashima (Setsunan Univ.) |
| (23) |
15:05-15:30 |
Growth and Conductivity Control of Corundum-Structured Gallium Oxides on Sapphire Substrates ED2016-79 CPM2016-112 LQE2016-95 |
Kazuaki Akaiwa, Kunio Ichino (Tottori Univ), Kentaro Kaneko, Shizuo Fujita (Kyoto Univ) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Devices (ED) [Latest Schedule]
|
| Contact Address |
Koji Matsunaga（NEC)
TEL：+81-44-435-8348 FAX：+81-44-455-8253
E- ： k-     fp   c
Toshikazu Suzuki (JAIST)
TEL : +81-761-51-1441 Fax : +81-761-51-1455
E- :  si  jaist |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
| Contact Address |
|
| LQE |
Technical Committee on Lasers and Quantum Electronics (LQE) [Latest Schedule]
|
| Contact Address |
Naoki Fujiwara (NTT)
TEL +81-46-240-3266, FAX +81-46-240-4345
E-:     o   
Takashi Katagiri（Tohoku Univ）
TEL +81-22-795-7107, FAX +81-22-795-7106
E-: gi ecei  |
| Announcement |
Homepage of LQE is http://www.ieice.org/~lqe/jpn/ |
Last modified: 2016-11-24 11:41:06
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