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| Chair |
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Hideki Nakazawa (Hirosaki Univ.) |
| Vice Chair |
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Tomoaki Terasako (Ehime Univ.) |
| Secretary |
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Noriko Bamba (Shinshu Univ.), Mayumi Takeyama (Kitami Inst. of Tech) |
| Assistant |
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Yasuo Kimura (Tokyo Univ. of Tech.), Fumihiko Hirose (Yamagata Univ.), Yuichi Nakamura (Toyohashi Univ. of Tech.) |
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| Chair |
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Seiya Sakai (Hokkaido Univ.) |
| Vice Chair |
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Manabu Arai (Nagoya Univ.) |
| Secretary |
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Toshiyuki Oishi (Saga Univ.), Yoshitugu Yamamoto (Mitsubishi Electric) |
| Assistant |
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Masatoshi Koyama (Osaka Inst. of Tech.), Tomohiro Yoshida (SUMITOMO ELECTRIC DEVICE INNOVATIONS) |
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| Chair |
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Kosuke Nishimura (KDDI Research) |
| Vice Chair |
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Atsushi Yamaguchi (Kanazawa Inst. of Tech.) |
| Secretary |
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Shinsuke Tanaka (Fujitsu), Yoshiaki Nishijima (Yokohama National Univ.) |
| Assistant |
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Keita Mochiduki (Yokohama National Univ.) |
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| Conference Date |
Thu, Nov 30, 2023 13:00 - 17:35
Fri, Dec 1, 2023 09:30 - 17:10 |
| Topics |
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| Conference Place |
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Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on LQE, ED, CPM. |
| |
13:00-13:05 |
( 5 min. ) |
Thu, Nov 30 PM
13:05 - 14:45 |
| (1) |
13:05-13:30 |
AlGaInN/GaN highhigh-electron mobility transistors with a thin unintentionally doped GaN channel and an AlN back barrier formed using a single single-crystal AlN substrate  ED2023-14 CPM2023-56 LQE2023-54 |
Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech) |
| (2) |
13:30-13:55 |
Fabrication of GaN HBTs using a quaternary AlGaInN emitter and a GaInN base ED2023-15 CPM2023-57 LQE2023-55 |
Masaya Takimoto, Akira Mase, Kojima tomoki, Egawa Takashi, Miyoshi Makoto (Nagoya Inst.Tech.) |
| (3) |
13:55-14:20 |
Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs with insulators formed by ALD ED2023-16 CPM2023-58 LQE2023-56 |
Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Technol.) |
| (4) |
14:20-14:45 |
Steam Oxidation Technique for Defect Reduction on ALD-Al2O3 Insulated-gate structures ED2023-17 CPM2023-59 LQE2023-57 |
Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasya, Toshihiro Tagi, Naoki Hara (Fujitsu) |
| |
14:45-14:55 |
Break ( 10 min. ) |
Thu, Nov 30 PM
14:55 - 16:10 |
| (5) |
14:55-15:20 |
Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy ED2023-18 CPM2023-60 LQE2023-58 |
Haruto Yoshimura, Hiroki Imabayashi (Fukui univ.), Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura (Sumitomo Chem.), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Fukui univ.) |
| (6) |
15:20-15:45 |
Formation of p-type GaN by Mg thermal diffusion and challenges for device applications ED2023-19 CPM2023-61 LQE2023-59 |
Yuta Itoh, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) |
| (7) |
15:45-16:10 |
Growth of low carbon density GaN on (0001) plane by MOVPE ED2023-20 CPM2023-62 LQE2023-60 |
Hirotaka Watanabe, Shugo Nitta, Naoki Fujimoto, Seiya Kawasaki, Takeru Kumabe, Kazuki Ohnishi, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) |
| |
16:10-16:20 |
Break ( 10 min. ) |
Thu, Nov 30 PM
16:20 - 17:35 |
| (8) |
16:20-16:45 |
Design and fabrication of InGaN-based broadband light-emitting structures toward flexible electrical spectral modulation ED2023-21 CPM2023-63 LQE2023-61 |
Haruyoshi Miyawaki, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (9) |
16:45-17:10 |
Approaches toward broadband emission from semipolar InGaN quantum wells on GaN microlens structures ED2023-22 CPM2023-64 LQE2023-62 |
Shogo Fukushige, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (10) |
17:10-17:35 |
Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system ED2023-23 CPM2023-65 LQE2023-63 |
Takahiro Fujiawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) |
Fri, Dec 1 AM
09:30 - 11:10 |
| (11) |
09:30-09:55 |
Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurements in InGaN quantum wells by utilizing Helmholtz resonance and increasing the air pressure inside the photoacoustic cell ED2023-24 CPM2023-66 LQE2023-64 |
Hiroki Tosa, Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.) |
| (12) |
09:55-10:20 |
Simultaneous microscopic PA/PL line-scan measurements in InGaN-quantum wells on a stripe-core GaN Substrate ED2023-25 CPM2023-67 LQE2023-65 |
Syoki Jinno, Atsushi A. Yamaguchi, Keito Mori-Tamamura (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Shigetaka Tomiya, Yoshihiro Kudo (Sony Semiconductor Solutions Corp.) |
| (13) |
10:20-10:45 |
Polarization control of surface emission from c-plane InGaN quantum wells and determination of deformation potential in InGaN alloy materials ED2023-26 CPM2023-68 LQE2023-66 |
Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech), Tomohiro Makino, Maho Ohara, Tatsushi Hamaguchi, Rintaro Koda (Sony Semiconductor Solutions) |
| (14) |
10:45-11:10 |
BGaN growth condition optimization for BGaN neutron detectors and radiation detection characteristics ED2023-27 CPM2023-69 LQE2023-67 |
Takayuki Nakano, Yuri Takahashi, Yuto Ohta, Yuki Shimizu, Yoku Inoue, Toru Aoki (Shizuoka Univ.) |
| |
11:10-11:20 |
Break ( 10 min. ) |
Fri, Dec 1 AM
11:20 - 12:35 |
| (15) |
11:20-11:45 |
Z-scheme formation of visible light photocatalyst g-C3N4/SnS2 ED2023-28 CPM2023-70 LQE2023-68 |
Yohei Mori, Baskar Malathi, Atsushi Nakamura (Shizuoka Univ) |
| (16) |
11:45-12:10 |
UV Light Detecting Properties of PEDOT:PSS/ZnO Nanorods/ ZnO:Ga Heterostructures with Annealed ZnO Nanorods Layers ED2023-29 CPM2023-71 LQE2023-69 |
Kaede Hirota, Masato Nakahori, Tomoaki Terasako (Ehime Univ), Masakazu Yagi (Natl. Inst. Tecnol., Kagawa coll.), Tetsuya Yamamoto (Kochi Univ. Technol.) |
| (17) |
12:10-12:35 |
Carrier Transport Mechanisms in PEDOT:PSS/ZnO Nanorods/ZnO:Ga Heterostructures ED2023-30 CPM2023-72 LQE2023-70 |
Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto (Kochi Univ. Technol.) |
| |
12:35-14:00 |
Break ( 85 min. ) |
Fri, Dec 1 PM
14:00 - 15:40 |
| (18) |
14:00-14:25 |
High thickness controllability of AlInN/GaN DBRs with in-situ reflectivity spectra measurements ED2023-31 CPM2023-73 LQE2023-71 |
Kenta Kobayashi, Ruka Watanabe, Taichi Nishikawa, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama (Meijo Univ.) |
| (19) |
14:25-14:50 |
Fabrication of GaN-based VCSELs with cavity length control including ITO electrode and Nb2O5 spacer ED2023-32 CPM2023-74 LQE2023-72 |
Ruka Watanabe, Kenta Kobayashi, Mitsuki Yanagawa, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.) |
| (20) |
14:50-15:15 |
Fabrication of vertical AlGaN-based UV-B LD ED2023-33 CPM2023-75 LQE2023-73 |
Toma Nishibayashi, Ryosuke Kondo, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Koki Hattori, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Hideto Miyake (Mie Univ.), Kohei Miyoshi, Koichi Naniwae (Ushio Inc.), Akihiko Yamaguchi (Seishin Trading Co. Ltd.) |
| (21) |
15:15-15:40 |
Toward the thermal management of photonic and electronic devices of III-nitride materials ED2023-34 CPM2023-76 LQE2023-74 |
Yoshihiro Ishitani, Masaya Chizaki, Thee Ei Khaing Shwe, Bojin Lin, Tatsuya Asaji, Bei Ma (Chiba Univ.) |
| |
15:40-15:50 |
Break ( 10 min. ) |
Fri, Dec 1 PM
15:50 - 17:10 |
| (22) |
15:50-16:15 |
Effects of AlN template polarity on BN grown by MOVPE and high temperature annealing ED2023-35 CPM2023-77 LQE2023-75 |
Yuto Oishi, Shiyu Xiao, Kenjiro Uesugi, Toru Akiyama, Tomohiro Tamano, Hideto Miyake (Mie University) |
| (23) |
16:15-16:40 |
The properties of UV-B laser diodes on AlN nanopillars by using wet etching method ED2023-36 CPM2023-78 LQE2023-76 |
Yoshinori Imoto, Ryosuke Kondo, Ryoya Yamada, Koki Hattori, Toma Nishibayashi, , Sho Iwayama, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ), Hideto Miyake (Mie Univ) |
| (24) |
16:40-17:05 |
Development of Shorter Wavelength 230 nm-Band Far-UVC LEDs and Realization of High Output Power LED Panels ED2023-37 CPM2023-79 LQE2023-77 |
Mitsuhiro Muta, Hiroyuki Oogami, Kengo Mouri, Hirokazu Kawashima (Nippon Tungsten), Noritoshi Maeda, Ajmal Khan, Yukio Kashima, Eriko Katsuura, Yuuki Nakamura, Kou Sumishi, Taiga Kirihara (RIKEN), Sachie Fujikawa, Hiroyuki Yaguchi (Saitama Univ), Yasushi Iwaisako (Nippon Tungsten), Hideki Hirayama (RIKEN) |
| |
17:05-17:10 |
( 5 min. ) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
| Contact Address |
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| ED |
Technical Committee on Electron Devices (ED) [Latest Schedule]
|
| Contact Address |
Toshiyuki Oishi (Saga Univ.）
TEL : 0952-28-8645
E- :oi 104 cc   -u
Takuya Tsutsumi (NTT)
TEL: 046-240-3180
E-:         |
| LQE |
Technical Committee on Lasers and Quantum Electronics (LQE) [Latest Schedule]
|
| Contact Address |
Shinsuke Tanaka (Fujitsu)
TEL +080-2203-4544
E-: n-    
Yoshiaki Nishijima (Yokohama national univ.)
TEL +045-339-4107
E-:   y |
| Announcement |
Homepage of LQE is http://www.ieice.org/~lqe/jpn/welcome.html |
Last modified: 2023-11-07 08:49:49
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Notification: Mail addresses are partially hidden against SPAM.
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