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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ICD, ITE-IST [detail] | 2024-08-05 14:30 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
[Invited Talk]
First Demonstration of Channel-All-Around TiO2 Channel FeFET Shoichi Kabuyanagi, Takamasa Hamai, Masayuki Murase, Takeru Maeda, Masumi Saitoh, Shosuke Fujii (KIC)  SDM2024-32 ICD2024-22 |
We demonstrate, for the first time, a 30nm-diameter vertical Channel-All-Around (CAA) ferroelectric FET (FeFET) with TiO... [more] | SDM2024-32 ICD2024-22 p.29 |
| SDM | 2024-01-31 15:50 |
Tokyo | KIT Toranomon Graduate School (Primary: On-site, Secondary: Online) |
[Invited Talk]
Physical Reservoir Computing using HZO-based FeFETs for Edge-AI Applications Shin-ichi Takagi, Kasidit Toprasertpong, Eishin Nkako, Rikuo Suzuki, Shin-Yi Min, Mitsuru Takenaka, Ryosho Nakane (The Univ. of Tokyo) SDM2023-80 |
Physical reservoir computing (RC) using ferroelectric HfZrO2/Si FeFETs is proposed and demonstrated for application to e... [more] | SDM2023-80 pp.24-27 |
| VLD, DC, RECONF, ICD, IPSJ-SLDM [detail] | 2023-11-15 15:05 |
Kumamoto | Civic Auditorium Sears Home Yume Hall (Primary: On-site, Secondary: Online) |
Co-design of Strong Lottery Ticket Hypothesis and FeFET-based CiM Kenshin Yamauchi, Ayumu Yamada, Naoko Misawa, Seong-Kun Cho, Kasidit Toprasertpong, Shinichi Takagi, Chihiro Matsui, Ken Takeuchi (Univ. of Tokyo) VLD2023-40 ICD2023-48 DC2023-47 RECONF2023-43 |
The Strong Lottery Hypothesis insists that an initialized neural network contains well performance partial networks and ... [more] | VLD2023-40 ICD2023-48 DC2023-47 RECONF2023-43 pp.60-63 |
| SDM | 2023-06-26 12:10 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | Evaluations of Crystalline Structures and Ferroelectricity of Zr/Hf-Multilayer Structures Formed by Thermal Oxidization Yunosuke Sano (Nagoya Univ.), Taoka Noriyuki (AIT), Makihara Katsunori (Nagoya Univ.), Ohta Akio (Hukuoka Univ.), Miyazaki Seiichi (Nagoya Univ.) SDM2023-31 |
The orthorhombic (O) phase of Hf oxides shows ferroelectricity even in ultra-thin films of ~5.0 nm. However, there are... [more] |
SDM2023-31 pp.15-18 |
| SDM | 2023-06-26 13:30 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | [Invited Lecture]
Pioneering Nondestructive Imaging of Ferroelectric Capacitors by Operando Laser-Based Photoemission Electron Microscopy Hirokazu Fujiwara, Yuki Itoya, Masaharu Kobayashi, Cedric Bareille, Shik Shin, Toshiyuki Taniuchi (Univ. of Tokyo) SDM2023-32 |
In order to elucidate the mechanism of characteristic modulations in HfO$_2$-based ferroelectric capacitors, an in-situ ... [more] | SDM2023-32 pp.19-22 |
| ICD | 2023-04-10 13:20 |
Kanagawa | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Novel scheme of HZO/Si FeFET reservoir computing for speech recognition Eishin Nako, Kasidit Toprasertpong, Ryosho Nakane, Mitsuru Takenaka, Shinichi Takagi (The Univ. of Tokyo) ICD2023-4 |
We have demonstrated reservoir computing (RC) using HZO/Si ferroelectric gate FETs (FeFETs), which realizes efficient ti... [more] | ICD2023-4 p.9 |
| SDM | 2022-10-19 14:05 |
Online | Online | Evaluation and analysis of ferroelectric BiFeO3 thin film surface Fuminobu Imaizumi (NIT, Oyama) SDM2022-58 |
Devices and sensors using ferroelectric and piezoelectric materials are currently used in various fields, but Pb(Zr,Ti)O... [more] | SDM2022-58 pp.16-19 |
| SDM | 2022-06-21 14:00 |
Aichi | Nagoya Univ. VBL3F | Impacts of Surface Orientation of Si Substrate on Crystalline Structures and Chemical Composition of Hf-oxide Layers Formed by Post Oxidation Wataru Yasuda, Noriyuki Taoka, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2022-26 |
Orthorhombic (O)Hf-based oxide exhibits ferroelectricity even in a thin film with a thickness of 5-10 nm. However, there... [more] | SDM2022-26 pp.9-12 |
| SDM, ED, CPM | 2022-05-27 16:40 |
Online | Online | Crystal Growth of YbFe2O4 Thin Films on Al2O3(0001) and YSZ(111) Substrates Kenshin Kurumai, Takehiro Teraji, Reo Tamura, Nobuyuki Iwata (Nihon Univ) ED2022-14 CPM2022-8 SDM2022-21 |
(To be available after the conference date) [more] | ED2022-14 CPM2022-8 SDM2022-21 pp.29-34 |
| SDM | 2021-11-11 13:00 |
Online | Online | [Invited Talk]
Prospects of HfZrO2-based FeFETs for Ultra-low Power Memory, Logic and AI Applications Shinichi Takagi, Kasidit Toprasertpong, Xuan Luo, Eishin Nako, Zeyu Wang, Tsung-En Lee, Kento Tahara, Mitsuru Takenaka, Ryosho Nakane (U. Tokyo) SDM2021-55 |
Since the discovery of ferroelectricity in HfO2-based dielectric films in 2011, FeFETs using HfO2-based thin films as ga... [more] | SDM2021-55 pp.13-18 |
| SDM | 2021-11-11 14:00 |
Online | Online | [Invited Talk]
Study on the efficient erase opeartion in ferroelectric HfO2 FeFET toward 3D vertical structure Masaharu Kobayashi, Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Chun-Jung Su (TSRI), Vita Pi-Ho Hu (NTU) SDM2021-56 |
(To be available after the conference date) [more] | SDM2021-56 pp.19-22 |
| SDM, ICD, ITE-IST [detail] | 2021-08-18 11:00 |
Online | Online | [Invited Talk]
Demonstration of HfO2-based ferroelectric ultra-thin films with low operating voltage, low process temperature, and high endurance
-- Toward embedded memory in advanced technology nodes -- Kasidit Toprasertpong, Kento Tahara (Univ. Tokyo), Yukinobu Hikosaka, Ko Nakamura, Hitoshi Saito (Fujitsu Semiconductor Memory Solution), Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-38 ICD2021-9 |
In this study, we demonstrate the importance of the thickness scaling of Hf0.5Zr0.5O2 thin films for the ferroelectric m... [more] | SDM2021-38 ICD2021-9 pp.42-47 |
| SDM | 2021-06-22 13:50 |
Online | Online | [Memorial Lecture]
Operation mechanism of Si/HZO ferroelectric FETs
-- Role of MOS (MFS) interface -- Kasidit Toprasertpong, Tsung-En Lee, Zaoyang Lin, Kento Tahara, Kouhei Watanabe, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-23 |
In this talk, we will introduce our findings on the mechanisms at the MFIS interface and their impacts on the memory cha... [more] | SDM2021-23 pp.7-12 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 11:40 |
Online | Online | Evaluation of dielectric properties of ferroelectric thin films for neural networks Yuma Ishisaki, Hiroki Umemura, Daiki Matsukawa, Mutsumi Kimura (RU), Eisuke Tokumitsu (JAIST), Kenichi Haga, Toshihiro Doi (MMC) EID2020-5 SDM2020-39 |
The neuromorphic system is a hardware-level biosimulation system that implements neuron and synaptic elements. It has th... [more] | EID2020-5 SDM2020-39 pp.17-20 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 16:30 |
Online | Online | Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ) EID2020-14 SDM2020-48 |
We fabricated a ferroelectric-gate thin-film transistor (FeTFT) with an amorphous Ga-Sn-O (GTO) channel and a ferroelect... [more] | EID2020-14 SDM2020-48 pp.54-57 |
| ICD, SDM, ITE-IST [detail] | 2020-08-06 10:15 |
Online | Online | [Invited Talk]
Polarization/charge coupling in Si ferroelectric FET and its impact on memory characteristics Kasidit Toprasertpong, Zaoyang Lin, Tsung-En Lee, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2020-2 ICD2020-2 |
Ferroelectric FETs, where the ferroelectric material is employed as the MOSFET gate insulator, are different from conven... [more] | SDM2020-2 ICD2020-2 pp.3-7 |
| SDM | 2020-01-28 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Performance Maximization of In-Memory Reinforcement Learning with Variability-Controlled Hf1-xZrxO2 Ferroelectric Tunnel Junctions Kensuke Ota, Marina Yamaguchi (kioxia), Radu Berdan, Takao Marukame, Yoshifumi Nishi (Toshiba), Kazuhiro Matsuo, Kota Takahashi, Yuta Kamiya, Shinji Miyano, Jun Deguchi, Shosuke Fujii, Masumi Saitoh (kioxia) SDM2019-84 |
We develop strategies to maximize the performance and reliability of in-memory reinforcement learning with Hf1-xZrxO2 fe... [more] | SDM2019-84 p.9 |
| SDM | 2019-11-08 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2019-74 |
We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials i... [more] | SDM2019-74 pp.27-32 |
| SDM | 2019-10-23 14:20 |
Miyagi | Niche, Tohoku Univ. | A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-54 |
In this study, we investigated suppression of SiO2 interfacial layer formation by introducing Hf interlayer to realize t... [more] | SDM2019-54 pp.7-10 |
| SDM, ICD, ITE-IST [detail] | 2019-08-09 09:30 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and | [Invited Talk]
A study on a ferroelectric transistor memory with ultrathin IGZO channel Masaharu Kobayashi, Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo) SDM2019-45 ICD2019-10 |
(To be available after the conference date) [more] | SDM2019-45 ICD2019-10 pp.59-62 |
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