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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2013-12-13 17:00 |
Nara | NAIST | A Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3- and NO-Annealed Gate Oxides Natsuko Kanafuji, Hiroshi Yano, Ai Osawa, Tomoaki Hatayama, Takashi Fuyuki (NAIST)  SDM2013-132 |
4H-SiC MOSFETs are expected as low loss power devices with high blocking voltage. Threshold voltage instability is one o... [more] | SDM2013-132 pp.97-100 |
| SDM | 2013-06-18 15:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
High performance of SiC-MOS devices by POCl3 annealing Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-58 |
Effects of phosphorus incorporation by POCl3 annealing on electrical properties of 4H-SiC MOS devices were investigated.... [more] | SDM2013-58 pp.71-76 |
| SDM | 2013-06-18 16:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
An attempt for clarification of SiC oxidation mechanism
-- Common/different point to Si oxidation -- Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi (Saitama Univ.) SDM2013-62 |
Further understanding of the SiC oxidization mechanism is indispensable for MOSFET using a SiC semiconductor to exceed t... [more] | SDM2013-62 pp.91-96 |
| SDM | 2013-06-18 17:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
4H-SiC MOS interface states studied by electron spin resonance spectroscopy T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA) SDM2013-64 |
Normally-off 4H-SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are promising devices for power electro... [more] | SDM2013-64 pp.101-105 |
| SDM, ED, CPM | 2013-05-16 13:30 |
Shizuoka | Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. | Evaluation of carrier lifetime for 4H-SiC surfaces treated by various processes Yuto Mori, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2013-16 CPM2013-1 SDM2013-23 |
For very high voltage SiC bipolar devices, the carrier lifetime is an important parameter which influences the device pe... [more] | ED2013-16 CPM2013-1 SDM2013-23 pp.1-6 |
| SDM | 2012-12-07 10:30 |
Kyoto | Kyoto Univ. (Katsura) | Change of Scattering Mechanisms of Holes in SiC by Electron Irradiation Kohji Murata, Tatsuya Morine, Hideharu Matsuura (Osaka Electro-Communication Univ), Shinobu Onoda, Takeshi Ohshima (JAEA) SDM2012-117 |
SiC has advantages of higher resistance to radiation and higher breakdown electric field, compared with Si. Therefore, S... [more] | SDM2012-117 pp.13-18 |
| SDM | 2012-12-07 10:45 |
Kyoto | Kyoto Univ. (Katsura) | Effects of phosphorus incorporation into SiO2/SiC interface on electrical properties of MOS capacitors fabricated on 4H-SiC(11-20) Nao Umezawa, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2012-118 |
We have already reported that the interface state density of MOS capacitors on n-type 4H-SiC (0001) and (000-1) faces ca... [more] | SDM2012-118 pp.19-23 |
| ED, SDM, CPM | 2012-05-18 11:15 |
Aichi | VBL, Toyohashi Univ. of Technol. | Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33 |
Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never complet... [more] | ED2012-31 CPM2012-15 SDM2012-33 pp.67-72 |
| SDM | 2011-12-16 10:40 |
Nara | NAIST | Effects of POCl3 Annealing on SiO2/p-type 4H-SiC Interface properties Toshimitsu Takaue, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2011-134 |
We have already reported that the interface state density for n-type 4H-SiC MOS structures can be greatly reduced by POC... [more] | SDM2011-134 pp.11-15 |
| SDM | 2011-12-16 11:00 |
Nara | NAIST | Demonstration of 15 kV 4H-SiC PiN Diodes with Improved Junction Termination Structures Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-135 |
Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone... [more] | SDM2011-135 pp.17-21 |
| SDM | 2011-12-16 11:20 |
Nara | NAIST | Evaluation of Intrinsic Defects in Sacrificial Oxidized High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy Seiji Nishikawa, Ryota Okada, Hideharu Matsuura (Osaka Electro-Communication univ.) SDM2011-136 |
To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply DCTS (Discharge Curr... [more] | SDM2011-136 pp.23-28 |
| CPM, SDM, ED | 2011-05-19 10:25 |
Aichi | Nagoya Univ. (VBL) | Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers Masashi Kato, Atsushi Yoshida, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-4 CPM2011-11 SDM2011-17 |
To fabricate very high voltage SiC devices, control of the carrier lifetime is extremely important. However, there have ... [more] | ED2011-4 CPM2011-11 SDM2011-17 pp.15-20 |
| SDM | 2010-12-17 14:10 |
Kyoto | Kyoto Univ. (Katsura) | Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy Seiji Nishikawa, Seigo Kitanoya, Hideharu Matsuura (Osaka Electro-Communication Univ.) SDM2010-194 |
To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply discharge current tr... [more] | SDM2010-194 pp.51-56 |
| SDM | 2010-12-17 14:30 |
Kyoto | Kyoto Univ. (Katsura) | Change of majority carrier density in 4H-SiC epilayer by 200keV electron irradiation Takunori Nojiri, Kozo Nishino, Hideki Yanagisawa, Hideharu Matsuura (Osaka Electro-Communication Univ.), Shinobu Onoda, Takeshi Ohshima (JAEA) SDM2010-195 |
The temperature dependencies of the majority-carrier concentrations in Al-doped 4H-SiC or N-doped 4H-SiC epilayers with ... [more] | SDM2010-195 pp.57-62 |
| SDM | 2009-12-04 10:20 |
Nara | NAIST | Research on Radiation Resistance in SiC Epilayer by 200 keV Electron Irradiation.
-- dopant-density dependence -- Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA) SDM2009-154 |
We investigate the effect of 200 keV electron irradiation that only displaces C atoms in SiC on the majority-carrier con... [more] | SDM2009-154 pp.17-22 |
| SDM, ED | 2008-07-11 15:35 |
Hokkaido | Kaderu２・７ | Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition Masashi Kato, Hidenori Ono, Kazuya Ogawa, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-108 SDM2008-127 |
4H-SiC Schottky diodes are promising devices for the application of high-power and high-frequency rectifiers．However it ... [more] | ED2008-108 SDM2008-127 pp.357-361 |
| CPM, ED, SDM | 2008-05-16 14:40 |
Aichi | Nagoya Institute of Technology | Observation Method of Variation in Barrier Height in 4H-SiC Schottky Diodes Using the Electrochemical Deposition Hidenori Ono, Kazuya Ogawa, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-19 CPM2008-27 SDM2008-39 |
4H-SiC Schottky Diodes are promising for application of high-power and high-frequency rectifiers．However it is reported... [more] | ED2008-19 CPM2008-27 SDM2008-39 pp.89-94 |
| CPM, ED, SDM | 2008-05-16 15:05 |
Aichi | Nagoya Institute of Technology | Characterization of epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method Yoshinori Matsushita, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2008-20 CPM2008-28 SDM2008-40 |
Silicon Carbide (SiC) is a promising material for high power and high frequency devices. However we cannot transfer thes... [more] | ED2008-20 CPM2008-28 SDM2008-40 pp.95-100 |
| ED | 2007-06-16 12:00 |
Toyama | Toyama Univ. | Reverse characteristics of 4H-SiC PiN diode with Vanadium ion implanted guard-ring Shuichi Ono, Manabu Arai (NJRC) ED2007-46 |
We fabricated the 4H-SiC PiN diodes with mesa structure, and Vanadium ion implanted guard-ring. The reverse characterist... [more] | ED2007-46 pp.79-83 |
| SDM | 2007-06-07 16:45 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Effects of High-Pressure H2O Vapor annealing on SiO2/4H-SiC Interface Properties and MOSFET Performance Hiroshi Yano, Daisuke Takeda, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST) SDM2007-38 |
High-pressure H2O vapor annealing was performed for 4H-SiC MOS structures to modify interface properties and MOSFET perf... [more] | SDM2007-38 pp.37-42 |
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