Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, ED |
2013-01-18 13:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analysis of Lag Phenomena, Current Collapse and Breakdown Characteristics in Source-Field-Plate AlGaN/GaN HEMTs Hideyuki Hanawa, Hiraku Onodera, Kazushige Horio (Shibaura Inst. Tech.) ED2012-123 MW2012-153 |
Two-dimensional analysis of lag phenomena, current collapse and breakdown voltages in source-field-plate AlGaN/GaN HEMTs... [more] |
ED2012-123 MW2012-153 pp.57-62 |
MW, ED |
2013-01-18 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs Kenichiro Tanaka, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-124 MW2012-154 |
Kinetic studies on the current collapse of a normally-off AlGaN/GaN heterostructure field effect transistor under a high... [more] |
ED2012-124 MW2012-154 pp.63-68 |
ED, LQE, CPM |
2012-11-29 14:20 |
Osaka |
Osaka City University |
Evaluation of transient current of GaN HEMTs on Si under light Takuya Joka, Akio Wakejima, Takashi Egawa (NIT) ED2012-72 CPM2012-129 LQE2012-100 |
We evaluated a transient response of a drain current (Id(t)) of an AlGaN/GaN HEMT on a Si substrate under light irradiat... [more] |
ED2012-72 CPM2012-129 LQE2012-100 pp.29-32 |
LQE, ED, CPM |
2011-11-17 15:15 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Analysis of Recovery process in AlGaN/GaN HFET Current Collapse Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS) ED2011-82 CPM2011-131 LQE2011-105 |
The recovery process of AlGaN/GaN HFET current collapse is measured. From LED light irradiation experiments, it is estim... [more] |
ED2011-82 CPM2011-131 LQE2011-105 pp.43-48 |
CPM, SDM, ED |
2011-05-20 16:40 |
Aichi |
Nagoya Univ. (VBL) |
Current collapse in GaN-based HFETs
-- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate -- Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47 |
We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing... [more] |
ED2011-34 CPM2011-41 SDM2011-47 pp.175-178 |
MW, ED |
2011-01-14 09:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) ED2010-182 MW2010-142 |
By using a dual-gate structure, we have investigated impact of gate-stress position on the current collapse behavior of ... [more] |
ED2010-182 MW2010-142 pp.41-44 |
MW, ED |
2011-01-14 09:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Two-Dimensional Analysis of Backside-Electrode and Gate-Field-Plate Effects on Buffer-Related Current Collapse in AlGaN/GaN HEMTs Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2010-183 MW2010-143 |
Two-dimensional transient analysis of gate-field-plate AlGaN/GaN HEMTs with a backside electrode is performed in which a... [more] |
ED2010-183 MW2010-143 pp.45-50 |
CPM, LQE, ED |
2010-11-12 10:50 |
Osaka |
|
Vertical GaN Diode on GaN Free-Standing Substrate Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.) ED2010-156 CPM2010-122 LQE2010-112 |
We report the fabrication of schottky barrier diode (SBD) on GaN free-standing substrate. SBDs showed good DC operating... [more] |
ED2010-156 CPM2010-122 LQE2010-112 pp.63-66 |
ED, LQE, CPM |
2009-11-20 11:20 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Analysis of AlGaN/GaN HFET Current Collapse By Step Stress Measurement Kentaro Kuroda, Yusuke Ikawa, Kenta Mituyama, Jin-Ping Ao, Yasuo Ohno (The Univ of Tokushima) ED2009-151 CPM2009-125 LQE2009-130 |
Current Collapse of AlGaN/GaN HFET is assumed that a negative charge in the device by Drain bias is a cause. The process... [more] |
ED2009-151 CPM2009-125 LQE2009-130 pp.109-114 |
SDM, ED |
2008-07-09 11:40 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) ED2008-41 SDM2008-60 |
We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heteros... [more] |
ED2008-41 SDM2008-60 pp.9-14 |
SDM, ED |
2008-07-11 14:50 |
Hokkaido |
Kaderu2・7 |
AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry) ED2008-105 SDM2008-124 |
Current collapse phenomenon is a big obstacle in the AlGaN/GaN high electron mobility transistors (HEMTs), since they ha... [more] |
ED2008-105 SDM2008-124 pp.341-345 |
NC, MBE (Joint) |
2008-03-12 10:20 |
Tokyo |
Tamagawa Univ |
* Mikihiro Nishijima, Takayuki Yamaguchi, Terunori Mori (Tamagawa Univ.) NC2007-131 |
A review of psychophysical experiment was done and the big differences of their results are found. We set a suitable ne... [more] |
NC2007-131 pp.115-120 |
ED, MW |
2008-01-16 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Effects of a thermal CVD SiN passivation film on electrical characteristics of AlGaN/GaN HEMTs Toshiharu Marui, Shinichi Hoshi, Yoshiaki Morino, Masanori Itoh, Isao Tamai, Fumihiko Toda, Hideyuki Okita, Yoshiaki Sano, Shohei Seki (OKI) ED2007-208 MW2007-139 |
In AlGaN/GaN HEMTs, we used a thermal CVD SiN surface passivation film for suppressing the current collapse due to AlGaN... [more] |
ED2007-208 MW2007-139 pp.11-15 |
CPM, ED, LQE |
2007-10-12 10:50 |
Fukui |
Fukui Univ. |
Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2007-169 CPM2007-95 LQE2007-70 |
Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are consid... [more] |
ED2007-169 CPM2007-95 LQE2007-70 pp.67-72 |
ED, MW |
2006-01-19 10:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analysis of Slow Current Transients and Current Collapse in GaN FETs Hiroki Takayanagi, Keiichi Itagaki, Hiroyuki Nakano, Kazushige Horio (Shibaura Inst. Tech.) |
Two-dimensional transient analyses of GaN MESFETs are performed in which a deep donor and a deep acceptor in a semi-insu... [more] |
ED2005-199 MW2005-153 pp.1-6 |
ED, MW |
2006-01-19 13:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
AlGaN/GaN HFETs with a low-temperature GaN cap layer Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology) |
AlGaN/GaN heterostructure field-effect transistors (HFETs) with a highly resistive, low-temperature GaN (LT-GaN) cap lay... [more] |
ED2005-203 MW2005-157 pp.23-27 |