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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2014-10-17 13:50 |
Miyagi | Niche, Tohoku Univ. | Analysis of trap density causing random telegraph noise in MOSFETs Toshiki Obara, Akinobu Teramoto, Rihito Kuroda, Akihiro Yonezawa, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)  SDM2014-93 |
The incidence ratio of Random Telegraph Noise in 131,072 MOSFETs was evaluated statistically by using array test circuit... [more] | SDM2014-93 pp.55-59 |
| SDM | 2013-10-17 16:10 |
Miyagi | Niche, Tohoku Univ. | A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2013-91 |
[more] | SDM2013-91 pp.15-20 |
| SDM | 2013-10-18 14:00 |
Miyagi | Niche, Tohoku Univ. | Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region Akihiro Yonezawa, Akinobu Teramoto, Toshiki Obara, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2013-98 |
We extracted time constants of capture and emission of Random Telegraph Noise (RTN), and their dependencies of the gate-... [more] | SDM2013-98 pp.51-56 |
| SDM | 2012-10-25 15:20 |
Miyagi | Tohoku Univ. (Niche) | Chemical structures of compositional transition layer at SiO2/Si(100) interface Tomoyuki Suwa, Akinobu Teramoto (Tohoku Univ.), Takayuki Muro, Toyohiko Kinoshita (JASRI), Shigetoshi Sugawa, Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.) SDM2012-89 |
[more] | SDM2012-89 pp.1-4 |
| SDM | 2012-10-25 16:10 |
Miyagi | Tohoku Univ. (Niche) | Evaluation of crystalline phase in SiO2 thin film using grazing incidence X-ray diffraction Kohki Nagata, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Koganezawa, Ichiro Hirosawa (JASRI), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe) SDM2012-91 |
Crystalline like structures in SiO2 thin films formed using oxygen molecules/radicals were investigated by X-ray reflect... [more] | SDM2012-91 pp.11-14 |
| SDM | 2012-10-26 09:30 |
Miyagi | Tohoku Univ. (Niche) | Noise Performance of Accumulation MOSFETs Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-92 |
Whether the use of a different material such as the germanium or the use of a new structure such as multigate device for... [more] | SDM2012-92 pp.15-20 |
| SDM | 2012-10-26 09:55 |
Miyagi | Tohoku Univ. (Niche) | Low Temperature PECVD of High Quality Silicon Nitride for Gate Spacer Yukihisa Nakao, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-93 |
[more] | SDM2012-93 pp.21-26 |
| SDM, ED (Workshop) |
2012-06-27 14:45 |
Okinawa | Okinawa Seinen-kaikan | 100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits Hidetoshi Utsumi, Ryohei Kasahara, Yukihisa Nakao, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
[more] | |
| SDM | 2011-10-20 14:20 |
Miyagi | Tohoku Univ. (Niche) | Reduction of Random Telegraph Noise with Broad Channel MOSFET Hiroyoshi Suzuki, Rihito Kuroda, Akinobu Teramoto, Akihiro Yonezawa, Hiroaki Matsuoka, Taiki Nakazawa, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-98 |
Drastic reduction of random telegraph noise (RTN) is demonstrated due to the broad channel MOSFET structure. We found th... [more] | SDM2011-98 pp.5-9 |
| SDM | 2011-10-20 14:45 |
Miyagi | Tohoku Univ. (Niche) | Statistical Evaluations of Generation and Recovery Characteristics of Anomalous Stress Induced Leakage Current Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-99 |
[more] | SDM2011-99 pp.11-16 |
| SDM | 2011-10-20 15:45 |
Miyagi | Tohoku Univ. (Niche) | On the relation between interface flattening effect and insulator breakdown characteristic of radical reaction based insulator formation technology Rihito Kuroda, Akinobu Teramoto, Xiang Li, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-101 |
[more] | SDM2011-101 pp.21-26 |
| SDM | 2011-10-21 10:15 |
Miyagi | Tohoku Univ. (Niche) | Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI), Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.) SDM2011-105 |
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radica... [more] | SDM2011-105 pp.49-52 |
| SDM, ED (2nd) |
2011-06-29 - 2011-07-01 |
Overseas | Legend Hotel, Daejeon, Korea | Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) |
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radica... [more] | |
| SDM | 2010-11-11 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Statistical Evaluation of Random Telegraph Sygnal in MOSFET Akinobu Teramoto, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2010-174 |
Important parameters of Random Telegraph Signal (RTS) in MOSFET, such as amplitude, time constant vary very much. For ev... [more] | SDM2010-174 pp.17-22 |
| SDM | 2010-10-21 17:10 |
Miyagi | Tohoku University | Low Resistance Source/Drain Contacts with Low Schottky Barrier for High Performance Transistors Hiroaki Tanaka, Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2010-157 |
[more] | SDM2010-157 pp.25-30 |
| SDM | 2010-10-22 13:40 |
Miyagi | Tohoku University | Integration of Novel Non-porous Low-k Dielectric Fluorocarbon into Advanced Cu Interconnects Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Shin-Ichiro Kuroki, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2010-165 |
[more] | SDM2010-165 pp.53-56 |
| SDM | 2010-10-22 14:50 |
Miyagi | Tohoku University | Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI) SDM2010-167 |
The chemical and electronic-band structures of SiO2/Si interfaces formed utilizing oxygen radicals were investigated by ... [more] | SDM2010-167 pp.61-65 |
| SDM | 2010-10-22 16:20 |
Miyagi | Tohoku University | Strain evaluation in Si at atomically flat SiO2/Si interface Maki Hattori (Meiji Univ.), Daisuke Kosemura (Meiji Univ./JSPS), Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Motohiro Tomita, Yuuki Mizukami, Yuuki Hashiguchi, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe), Tomoyuki Koganezawa (JASRI) SDM2010-170 |
We performed Raman spectroscopy and in-plane XRD measurement to clarify the structure and strain in Si at and near an at... [more] | SDM2010-170 pp.71-75 |
| ED, SDM | 2010-07-02 12:15 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | High Integrity Gate Insulator Films on Atomically Flat Silicon Surface Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2010-93 SDM2010-94 |
A low temperature atomically flattening technology for Si(100) wafer is developed. By annealing in ultra pure argon ambi... [more] | ED2010-93 SDM2010-94 pp.183-188 |
| ED, SDM | 2010-07-02 15:30 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2010-119 SDM2010-120 |
[more] | ED2010-119 SDM2010-120 pp.303-308 |
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