Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, SDM, CPM |
2024-05-24 15:50 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Improvement of Sensitivity for Power Cycle Degradation by A New Device Structure Koki Okame, Yuki Yamakita, Shin-ichi Nishizawa, Wataru Saito (Kyushu Univ) ED2024-9 CPM2024-9 SDM2024-16 |
This paper reports a demonstration of a new sensor device structure designed to increase the current change for detectin... [more] |
ED2024-9 CPM2024-9 SDM2024-16 pp.29-32 |
SDM |
2021-06-22 14:40 |
Online |
Online |
[Invited Lecture]
FET characteristics with 2D channel Hitoshi Wakabayashi (Tokyo Tech) SDM2021-24 |
MISFETs with 2D channel have been reviewed for advanced CMOS devices, in which TMDC PVD and following sulfurization proc... [more] |
SDM2021-24 pp.13-15 |
ICD, CPSY |
2016-12-16 16:10 |
Tokyo |
Tokyo Institute of Technology |
Analysis of Wide-Range-Temperature Compensation Using Isothermal-Point and Back-Gate-Bias-Control for ISFET-Array Makoto Ogi, Zule Xu, Takayuki Kawahara (TUS) ICD2016-99 CPSY2016-105 |
pH sensors using ion-sensitive field effect transistors (ISFETs) are sensitive to temperature variation, which limits th... [more] |
ICD2016-99 CPSY2016-105 pp.155-160 |
ED |
2015-08-03 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
DEVELOPMENT OF NO PH SENSITIVE DEVICE USING PMMA CONCERNTRATED POLYMER BRUSHE Kazuki Shimizu (Toyohashi Univ of Tech), Beak Sungchul (Kyoto Univ), Fumihiro Dasai, Tatsuya Iwata, Makoto Ishida (Toyohashi Univ of Tech), Yoshinobu Tujii (Kyoto Univ), Kazuaki Sawada (Toyohashi Univ of Tech) ED2015-47 |
This paper reports a pH measuring system that uses a sensor device that can measure only the electrolyte potential, as a... [more] |
ED2015-47 pp.1-4 |
ED, SDM, CPM |
2012-05-18 09:00 |
Aichi |
VBL, Toyohashi Univ. of Technol. |
High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa Masashi Kashiwano, Jun Hirai, Shunsuke Ikeda, Motohiko Fujimatsu, Yasuyuki Miyamoto (TITech) ED2012-26 CPM2012-10 SDM2012-28 |
We fabricated a vertical metal-insulator-semiconductor feld-effect transistor (MISFET) with a heterostructure launcher a... [more] |
ED2012-26 CPM2012-10 SDM2012-28 pp.43-48 |
SDM |
2010-06-22 14:10 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Tatsuro Maeda (AIST), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical), Akihiro Ohtake (NIMS), Takuya Hoshii, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2010-42 |
There has been a significant interest in the III-V channel MISFET technology which expectedly enables performance improv... [more] |
SDM2010-42 pp.49-54 |
ED |
2010-06-17 13:50 |
Ishikawa |
JAIST |
Electrochemical Formation of InP Porous Structures and Their Application to High-Sensitive Chemical Sensors Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.) ED2010-35 |
(To be available after the conference date) [more] |
ED2010-35 pp.11-15 |
SDM |
2009-11-12 15:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Device Modeling and Simulation for CMOS Biosensor Applications Shigeyasu Uno, Kazuo Nakazato (Nagoya Univ.) SDM2009-141 |
Modeling and simulation of Ion-sensitive Field-Effect Transistor (ISFET) operation is presented. A brief explanation of ... [more] |
SDM2009-141 pp.33-37 |
SDM, ED |
2009-06-25 09:30 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
[Invited Talk]
InGaAs/InP MISFET with epitaxially grown source Yasuyuki Miyamoto, Toru Kanazawa, Hisashi Saito, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-72 SDM2009-67 |
Recently, III-V thin films have been identified as potential candidates for future nMOS channels. High current drivabili... [more] |
ED2009-72 SDM2009-67 pp.99-103 |
SDM |
2009-06-19 15:10 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38 |
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] |
SDM2009-38 pp.67-70 |
SDM |
2009-06-19 15:40 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita (Toshiba Corp.) SDM2009-39 |
Intrinsic correlation between mobility reduction by remote Coulomb scattering (RCS) and threshold voltage shift (ΔVt), b... [more] |
SDM2009-39 pp.71-76 |
MBE |
2006-07-14 10:55 |
Okayama |
Okayama University Medical School |
Development of a flow-through type pH/CO2 sensor system based on ISFET for cellular function Satoshi Mohri, Michihiro Nakamura, Keiji Naruse (Okayama Univ.) |
We developed a pH/CO2 sensor system using two ion sensitive field effect transistors (ISFETs) to evaluate the metabolic ... [more] |
MBE2006-29 pp.1-4 |